elm14418aa

Single N-channel MOSFET
ELM14418AA-N
■General description
■Features
ELM14418AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=30V
Id=11.5A (Vgs=20V)
Rds(on) < 14mΩ (Vgs=20V)
Rds(on) < 17mΩ (Vgs=10V)
Rds(on) < 40mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±25
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
11.5
Id
9.7
40
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
3.0
A
1
A
2
W
2.1
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
31
Max.
40
Unit
°C /W
59
16
75
24
°C /W
°C /W
Note
1
3
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
Pin name
SOURCE
SOURCE
3
4
5
SOURCE
GATE
DRAIN
6
7
8
DRAIN
DRAIN
DRAIN
4-1
D
G
S
Single N-channel MOSFET
ELM14418AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
BVdss Id=250μA, Vgs=0V
Idss
30
1
Vds=24V, Vgs=0V
Ta=55°C
5
Gate-body leakage current
Gate threshold voltage
Igss Vds=0V, Vgs=±25V
Vgs(th) Vds=Vgs, Id=250μA
1.5
On state drain current
Id(on) Vgs=10V, Vds=5V
40
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge(10V)
Total gate charge(4.5V)
Gate-source charge
Rds(on)
Gfs
Vsd
V
2.4
Vgs=10V, Id=10A
9.8
14.2
12.3
14.0
18.0
17.0
Vgs=4.5V, Id=5A
Vds=5V, Id=10A
Is=1A, Vgs=0V
32.0
22
0.76
40.0
Vgs=20V
Id=11.5A
Ta=125°C
14
Ciss
Qg
Qg
Qgs
Vgs=0V, Vds=15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=10V, Vds=15V, Id=11.5A
nA
V
A
Is
Coss
Crss
Rg
100
3.0
μA
mΩ
mΩ
1.00
mΩ
S
V
4.3
A
758
pF
180
128
0.7
pF
pF
Ω
16.6
8.6
2.5
nC
nC
nC
Gate-drain charge
Turn-on delay time
Turn-on rise time
Qgd
td(on)
tr
Vgs=10V, Vds=15V
4.9
5.4
5.1
nC
ns
ns
Turn-off delay time
td(off) RL=1.3Ω, Rgen=3Ω
tf
14.4
3.7
ns
ns
16.9
6.6
ns
nC
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
trr
Qrr
If=11.5A, dIf/dt=100A/μs
If=11.5A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
ELM14418AA-N
■Typical electrical and thermal characteristics
50
30
10V
45
6V
7V
35
Id (A)
25
Vds=5V
20
5V
30
25
Id(A)
40
3.5V
20
15
125°C
10
15
Vgs=3V
10
5
0
0
1
2
3
4
25°C
5
0
5
2
2.5
Vds (Volts)
Fig 1: On-Region Characteristics
4
4.5
5
5.5
1.8
Normalized On-Resistance
40
Vgs=4.5V
35
Rds(on) (m� )
3.5
Vgs(Volts)
Figure 2: Transfer Characteristics
45
30
25
20
15
Vgs=10V
10
Vgs=20V
5
0
5
10
15
20
25
Id=10A
1.6
Vgs=20V
1.2
1
0.8
30
0
1.0E+01
50
1.0E+00
Id=10A
50
75
100
125
150
175
1.0E-01
Is (A)
30
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
40
Vgs=10V
1.4
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Rds(on) (m� )
3
125°C
125°C
1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
10
1.0E-05
0
0
5
10
15
0.0
20
0.2
0.4
0.6
0.8
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.0
Single N-channel MOSFET
ELM14418AA-N
10
1000
Capacitance (pF)
8
Vgs (Volts)
1200
Vds=15V
Id=11.5A
6
4
Ciss
800
600
400
2
Coss
200
Crss
0
0
4
8
12
16
0
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
Rds(on)
limited
100�s
1ms
0.1s
1.0
1s
Tj(max)=150°C
Ta=25°C
DC
1
10
100
20
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=40°C/W
30
30
0
0.001
Vds (Volts)
10
25
10
10s
0.1
0.1
20
Tj(max)=150°C
Ta=25°C
40
10�s
Power (W)
Id (Amps)
50
10ms
Z� ja Normalized Transient
Thermal Resistance
15
Vds (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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