elm14430aa

Single N-channel MOSFET
ELM14430AA-N
■General description
■Features
ELM14430AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=18A (Vgs=10V)
Rds(on) < 5.5mΩ (Vgs=10V)
Rds(on) < 7.5mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
30
V
Gate-source voltage
Vgs
±20
V
Ta=25°C
Continuous drain current
Ta=70°C
Pulsed drain current
18
Id
15
80
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
3.0
A
1
A
2
W
2.1
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
31
Max.
40
Unit
°C/W
59
16
75
24
°C/W
°C/W
Note
1
3
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
Pin name
SOURCE
2
3
4
SOURCE
SOURCE
GATE
5
6
DRAIN
DRAIN
7
DRAIN
8
DRAIN
4-1
D
G
S
Single N-channel MOSFET
ELM14430AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
100
nA
1.8
2.5
V
A
4.7
5.5
6.5
8.0
Vgs=4.5V, Id=15A
Vds=5V, Id=18A
6.2
82
7.5
mΩ
S
Is=1A, Vgs=0V
0.7
1.0
4.5
V
A
Vgs=0V, Vds=15V, f=1MHz
4660
425
6060
638
7270
960
pF
pF
Vgs=0V, Vds=0V, f=1MHz
240
0.20
355
0.45
530
0.90
pF
Ω
80
103
124
nC
37
48
58
nC
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Forward transconductance
Gfs
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Total gate charge (4.5V)
Qg
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Ta=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Rds(on)
V
μA
Idss
Static drain-source on-resistance
30
1
5
Zero gate voltage drain current
Gate threshold voltage
On state drain current
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Vgs=10V, Id=18A
1.0
80
Ta=125°C
Qg
Vgs=10V, Vds=15V, Id=18A
18
15
mΩ
nC
nC
td(on)
12.0
16.0
ns
tr
Vgs=10V, Vds=15V
td(off) RL=0.83Ω, Rgen=3Ω
8.0
51.5
12.0
70.0
ns
ns
8.8
33.5
22.0
14.0
44.0
30.0
ns
ns
nC
tf
trr
Qrr
If=18A, dIf/dt=100A/μs
If=18A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
ELM14430AA-N
■Typical electrical and thermal characteristics
60
60
10V
Id (A)
40
50
4.5V
3.5V
Vds=5V
40
30
Id(A)
50
3.0V
125°C
30
20
20
10
10
Vgs=2.5V
0
25°C
0
0
1
2
3
4
5
1
1.5
Vds (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
Vgs(Volts)
Figure 2: Transfer Characteristics
7.0
Normalized On-Resistance
1.6
6.5
Rds(on) (m� )
2
Vgs=4.5V
6.0
5.5
5.0
Vgs=10V
4.5
4.0
3.5
Vgs=4.5V
Id=18A
1.4
Vgs=10V
1.2
1
0.8
0
20
40
60
80
100
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
16
1.0E+01
1.0E+00
Id=18A
Is (A)
Rds(on) (m� )
12
125°C
8
125°C
25°C
1.0E-02
1.0E-03
25°C
4
1.0E-01
1.0E-04
1.0E-05
0
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.0
Single N-channel MOSFET
ELM14430AA-N
10
Capacitance (pF)
8
Vgs (Volts)
8000
Vds=15V
Id=18A
6
4
2
4000
2000
0
0
20
40
60
80
100
Ciss
6000
Crss
0
120
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
Rds(on)
limited
100�s
10ms
10.0
Tj(max)=150°C
Ta=25°C
Z�ja Normalized Transient
Thermal Resistance
30
60
40
0
0.001
Vds (Volts)
10
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=40°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
25
20
0.1
1
20
Tj(max)=150°C
Ta=25°C
80
1ms
0.1s
0.1
15
100
10�s
1s
10s
DC
1.0
10
Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
Id (Amps)
100.0
Coss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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