elm14440aa

Single N-channel MOSFET
ELM14440AA-N
■General description
■Features
ELM14440AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Continuous drain current
60
±20
5
Id
Ta=70°C
Pulsed drain current
Tc=25°C
Tc=70°C
2.5
1.6
-55 to 150
Pd
Junction and storage temperature range
V
V
4
20
Idm
Power dissipation
Vds=60V
Id=5A (Vgs=10V)
Rds(on) < 55mΩ (Vgs=10V)
Rds(on) < 75mΩ (Vgs=4.5V)
Tj, Tstg
A
1
A
2
W
°C
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
38
50
°C/W
69
24
80
30
°C/W
°C/W
Note
1
3
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
3
SOURCE
SOURCE
SOURCE
4
5
6
GATE
DRAIN
DRAIN
7
8
DRAIN
DRAIN
4-1
D
G
S
Single N-channel MOSFET
ELM14440AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit
Condition
BVdss Id=250μA, Vgs=0V
60
Zero gate voltage drain current
Idss
Vds=48V
Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
V
1
5
μA
100
nA
2.3
3.0
V
A
42
55
Ta=55°C
Gate threshold voltage
On state drain current
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Static drain-source on-resistance
Vgs=10V
Rds(on) Id=5A
Ta=125°C
Vgs=4.5V, Id=4A
Vds=5V, Id=5A
1.0
20
75
mΩ
54
11
75
mΩ
S
0.78
1.00
4
V
A
540
pF
pF
Forward transconductance
Gfs
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Input capacitance
Output capacitance
Ciss
Coss Vgs=0V, Vds=30V, f=1MHz
450
60
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg Vgs=0V, Vds=0V, f=1MHz
25
1.65
2.00
pF
Ω
Qg
8.5
10.5
nC
Total gate charge (4.5V)
Qg
4.3
5.5
nC
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Is=1A, Vgs=0V
Vgs=10V, Vds=30V, Id=5A
1.6
2.2
nC
nC
td(on)
5.1
7.0
ns
tr
Vgs=10V, Vds=30V
td(off) RL=6Ω, Rgen=3Ω
2.6
15.9
4.0
20.0
ns
ns
2.0
25.1
28.7
3.0
35.0
ns
ns
nC
tf
trr
Qrr
If=5A, dIf/dt=100A/μs
If=5A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
AO4440
ELM14440AA-N
■Typical electrical and thermal characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
20
15
10.0V
5.0V
VDS=5V
10
4.5V
10
125°C
ID(A)
ID (A)
15
4.0V
5
5
25°C
VGS=3.5V
0
0
1
2
3
4
0
5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3.5
4
4.5
5
2
80
Normalized On-Resistance
90
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics
100
VGS=4.5V
70
60
50
VGS=10V
40
30
20
0
5
10
15
1.8
VGS=10V
ID=5A
1.6
VGS=4.5V
ID=4A
1.4
1.2
1
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
160
1.0E+01
ID=5A
140
1.0E+00
125°C
1.0E-01
100
IS (A)
120
RDS(ON) (mΩ )
2.5
125°C
1.0E-02
25°C
1.0E-03
80
1.0E-04
25°C
60
1.0E-05
40
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Single N-channel MOSFET
AO4440
ELM14440AA-N
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
Capacitance (pF)
8
VGS (Volts)
800
VDS=30V
ID= 5A
6
4
2
600
Ciss
400
Coss
200
Crss
0
0
0
2
4
6
8
10
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
RDS(ON)
limited
10µs
10.0
100µs
10ms
1ms
1s
1.0
10s
TJ(Max)=150°C
TA=25°C
0.1s
10
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Zθ JA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
60
20
0
0.001
VDS (Volts)
10
50
10
DC
1
40
TJ(Max)=150°C
TA=25°C
30
0.1
0.1
30
VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
ID (Amps)
100.0
20
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
Alpha & Omega Semiconductor, Ltd.
100
1000