elm14468aa

Single N-channel MOSFET
ELM14468AA-N
■General description
■Features
ELM14468AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=11.6A (Vgs=10V)
Rds(on) < 14mΩ (Vgs=10V)
Rds(on) < 22mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
11.6
Id
9.2
50
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
3.1
A
1
A
2
W
2.0
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
31
Max.
40
Unit
°C/W
59
16
75
24
°C/W
°C/W
Note
1
3
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
Pin name
SOURCE
2
3
4
SOURCE
SOURCE
GATE
5
6
DRAIN
DRAIN
7
DRAIN
8
DRAIN
4-1
D
G
S
Single N-channel MOSFET
ELM14468AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
±100
nA
2.0
3.0
V
A
11.0
14.0
17.0
21.0
Vgs=4.5V, Id=10A
Vds=5V, Id=11.6A
17.4
19
22.0
mΩ
S
Is=1A, Vgs=0V
0.73
1.00
4.5
V
A
1200
Vgs=0V, Vds=15V, f=1MHz
955
145
pF
pF
Vgs=0V, Vds=0V, f=1MHz
112
0.50
0.85
pF
Ω
17.0
24.0
nC
9.0
12.0
nC
Vds=24V
Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Vgs(th) Vds=Vgs, Id=10mA
Id(on) Vgs=4.5V, Vds=5V
Static drain-source on-resistance
Vgs=10V
Rds(on) Id=11.6A
Gfs
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Total gate charge (4.5V)
Qg
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
Body diode reverse recovery time
Body diode reverse recovery charge
V
μA
Idss
Forward transconductance
30
1.000
5.000
Zero gate voltage drain current
Turn-on rise time
Turn-off delay time
Turn-off fall time
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
0.003
Ta=55°C
1.5
50
Ta=125°C
Qg
Vgs=10V, Vds=15V, Id=11.6A
3.4
4.7
mΩ
nC
nC
td(on)
5.0
6.5
ns
tr
Vgs=10V, Vds=15V
td(off) RL=1.3Ω, Rgen=3Ω
6.0
19.0
7.5
25.0
ns
ns
4.5
19
9
6.0
21
12
ns
ns
nC
tf
trr
Qrr
If=11.6A, dIf/dt=100A/μs
If=11.6A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
AO4468
ELM14468AA-N
■Typical electrical and thermal characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
35
10V
6V
60
4.5V
50
25
40
Id(A)
Id (A)
Vds=5V
30
VDS=VGS ID=1mA
30
25°C
5
10
0
0
0
1
2
3
1.5
4
2
25
800
140
80
0.5
Normalized On-Resistance
1.8
20
2.5
3
3.5
1.6
Vgs=4.5V
15
7
1.4
15
10
Vgs=10V
5
5
10
15
4.5
220
140
Vgs=10V
Id=11.6A
Vgs=4.5V
Id=10A
1.2
0
4
Vgs(Volts)
Figure 2: Transfer Characteristics
Vds (Volts)
Fig 1: On-Region Characteristics
Rds(on) (m�)
125°C1.8
1.4
50
15
10
Vgs=3.5V
20
20
1
0.8
20
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
50
1.0E+01
Id=11.6A
1.0E+00
1.0E-01
Is (A)
Rds(on) (m�)
40
30
125°C
1.0E-02
125°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR25°C
USES AS CRITICAL
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISI
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
1.0E-05
10
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.0
Single N-channel MOSFET
AO4468
ELM14468AA-N
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1250
Capacitance (pF)
8
Vgs (Volts)
1500
Vds=15V
Id=11.6A
6
VDS=VGS ID=1mA
4
2
Ciss
1000
750
1.4
50
500
1.8
Coss
250
0
0
4
8
12
16
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
Vds (Volts)
Figure 8: Capacitance Characteristics
1ms
100�s
0.1s
1.0
1s
Tj(max)=150°C
Ta=25°C
DC
1
0.1
10
Tj(max)=150°C
Ta=25°C
15
7
30
20
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
100
Vds (Volts)
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=40°C/W
220
140
0
0.0001 0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
30
10
10s
0.1
10
800
140
80
0.5
40
Power (W)
Id (Amps)
10�s
Rds(on)
limited
10ms
Z�ja Normalized Transient
Thermal Resistance
5
50
100.0
10.0
Crss
0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
Pd
COMPONENTS
NOT ASSUME ANY LIABILITY ARISI
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
Alpha & Omega Semiconductor, Ltd.
100
1000
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