elm34404aa

Single N-channel MOSFET
ELM34404AA-N
■General description
■Features
ELM34404AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=60V
Id=5.5A
Rds(on) < 55mΩ (Vgs=10V)
Rds(on) < 75mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
60
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
5.5
4.5
20
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
A
A
2.5
3
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Steady-state
Symbol
Rθja
■Pin configuration
Typ.
Max.
50
Unit
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
SOURCE
SOURCE
3
4
5
SOURCE
GATE
DRAIN
6
7
DRAIN
DRAIN
8
DRAIN
4-1
D
G
S
Single N-channel MOSFET
ELM34404AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=40V, Vgs=0V, Ta=55°C
10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
1.0
20
1.5
μA
±100
nA
2.5
V
A
Vgs=10V, Id=5.5A
42
55
mΩ
Vgs=4.5V, Id=4.5A
55
75
mΩ
Vds=10V, Id=5.5A
If=1A, Vgs=0V
14
1
S
V
Is
1.3
A
Ism
2.6
A
Gfs
Vsd
Ciss
650
pF
Coss Vgs=0V, Vds=25V, f=1MHz
Crss
80
35
pF
pF
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Max. body-diode continuous current
60
Vds=48V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
Vgs=10V, Vds=30V, Id=5.5A
12.5
2.4
18.0
2.6
Vgs=10V, Vds=30V, Id=1A
td(off) Rgen=6Ω
tf
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%;
2. Independent of operating temperature;
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
1
1
1
1
3
nC
nC
2
2
2
2
11
8
20
nC
ns
18
ns
2
19
35
ns
2
6
15
ns
2
NIKO-SEM
P5506BVG
Single N-channel
MOSFET
N-Channel
Logic Level
Enhancement
SOP-8
Lead-Free
Mode
Field Effect Transistor
ELM34404AA-N
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
Is - Reverse Drain Current(A)
10
25° C
0.1
-55° C
0.01
0.001
0.0001
4-3
T A = 125° C
1
0
0.6
0.2
0.4
0.8
VSD - Body Diode Forward Voltage(V)
1.0
1.2
NIKO-SEM
Single N-channel
MOSFET
N-Channel
Logic Level
Enhancement
ELM34404AA-N
Mode
Field Effect Transistor
P5506BVG
SOP-8
Lead-Free
4-4
4
SEP-30-2004
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