elm34406aa

Single N-channel MOSFET
ELM34406AA-N
■General description
■Features
ELM34406AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=40V
Id=7.5A
Rds(on) < 28mΩ (Vgs=10V)
Rds(on) < 42mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Vds
Vgs
Ta=25°C
Ta=100°C
Continuous drain current
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
40
V
±20
V
Pulsed drain current
7.5
6.5
20
Id
Idm
Tc=25°C
Power dissipation
Tc=100°C
Junction and storage temperature range
Pd
Tj, Tstg
A
A
2.5
3
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Steady-state
Rθja
■Pin configuration
Max.
Unit
50
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
Typ.
5
Pin No.
1
2
Pin name
SOURCE
SOURCE
3
4
SOURCE
GATE
5
6
DRAIN
DRAIN
7
8
DRAIN
DRAIN
4-1
D
G
S
Single N-channel MOSFET
ELM34406AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=30V, Vgs=0V, Ta=125°C
10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=10V
Max. body-diode continuous current
40
Vds=32V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
1.0
20
1.5
μA
±250
nA
2.5
V
A
Vgs=10V, Id=7.5A
21
28
mΩ
Vgs=4.5V, Id=6.5A
30
42
mΩ
Vds=10V, Id=7.5A
If=Is, Vgs=0V
19
1
S
V
Is
1.3
A
Ism
2.6
A
Gfs
Vsd
1
1
1
1
3
Ciss
790
pF
Coss Vgs=0V, Vds=10V, f=1MHz
Crss
175
65
pF
pF
Gate-source charge
Qg
Qgs
16.0
2.5
nC
nC
2
2
Gate-drain charge
Turn-on delay time
Qgd
td(on)
2.1
2.2
4.4
nC
ns
2
2
Turn-on rise time
Turn-off delay time
tr
7.5
15.0
ns
2
11.8
21.3
ns
2
7.4
ns
ns
2
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Vgs=10V, Vds=20V, Id=7.5A
Vgs=10V, Vds=20V, Id=1A
td(off) Rgen=6Ω
Turn-off fall time
Body diode reverse recovery time
tf
trr
If=5A, dIf/dt=100A/μs
3.7
15.5
Body diode reverse recovery charge
Qrr
If=5A, dIf/dt=100A/μs
7.9
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%;
2. Independent of operating temperature;
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
nC
NIKO-SEM
N-Channel Logic Level Enhancement
P2804BVG
SingleMode
N-channel
MOSFET
Field Effect
Transistor
SOP-8
Lead-Free
ELM34406AA-N
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
T A = 125° C
Is - Reverse Drain Current(A)
10
-55° C
0.1
0.01
0.001
4-3
25° C
1
0
0.4
0.2
0.6
0.8
1.0
VSD - Body Diode Forward Voltage(V)
1.2
1.4
NIKO-SEM
Single N-channel
MOSFET
N-Channel
Logic Level
Enhancement
Mode
Field Effect Transistor
ELM34406AA-N
4-4
P2804BVG
SOP-8
Lead-Free
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