elm34414aa

Single N-channel MOSFET
ELM34414AA-N
■General description
■Features
ELM34414AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=15A
Rds(on) < 8mΩ (Vgs=10V)
Rds(on) < 12mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=90°C
Continuous drain current
Pulsed drain current
15
12
50
Id
Idm
Tc=25°C
Power dissipation
Tc=90°C
Junction and storage temperature range
Pd
Tj, Tstg
A
A
2.5
3
W
2.0
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Steady-state
Rθja
■Pin configuration
Max.
Unit
50
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
Typ.
5
Pin No.
1
2
Pin name
SOURCE
SOURCE
3
4
SOURCE
GATE
5
6
DRAIN
DRAIN
7
8
DRAIN
DRAIN
5-1
D
G
S
Single N-channel MOSFET
ELM34414AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
Static drain-source on-resistance
Condition
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
30
V
Vds=24V, Vgs=0V
1
Vds=20V, Vgs=0V, Ta=55°C
10
Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA
Vgs=10V, Id=15A
Rds(on)
Vgs=4.5V, Id=12A
1.0
μA
±100
nA
1.5
6.8
3.0
8.0
V
mΩ
8.8
12.0
mΩ
Forward transconductance
Gfs
Vds=15V, Id=15A
Diode forward voltage
Max. body-diode continuous current
Vsd
Is
If=3A, Vgs=0V
Pulsed body-diode current
DYNAMIC PARAMETERS
Ism
Input capacitance
Output capacitance
Ciss
Coss Vgs=0V, Vds=15V, f=1MHz
1900
530
pF
pF
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
120
pF
Qg
Qgs
Qgd
18.0
4.2
5.4
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Vgs=10V, Vds=15V, Id=15A
60
1
S
1
1.1
3
V
A
1
6
A
3
28.0
nC
nC
nC
2
2
2
td(on)
tr
Vgs=10V, Vds=15V, Id=1A
10
24
ns
ns
2
2
td(off) RL=15Ω, Rgen=6Ω
48
ns
2
12
ns
2
tf
trr
If=3A, dIf/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%;
2. Independent of operating temperature;
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
5-2
50
80
ns
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Single N-channel
MOSFET
ELM34414AA-N
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■Typical electrical and thermal characteristics
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Output Characteristics
Transfer Characteristics
50
40
45
35
ID - Drain Current(A)
ID - Drain Current(A)
35
VGS=10thru 4V
40
30
25
20
15
10
3V
5
0
0
1
2
3
4
30
25
20
15
TC=125° C
10
25° C
5
0
0.0
5
VDS- Drain-to-Source Voltage(V)
0.5
1.0
2.0
2.5
3.0
3.5
4.0
VGS- Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current
0.015
2500
0.012
2000
C- Capacitance(pF)
rDS(on) - On-Resistance(�)
1.5
-55° C
VGS=4.5V
0.009
VGS=10V
0.006
0.003
Capacitance
f = 1 MHz
VGS=0V
Ciss
1500
1000
Coss
500
Crss
0.000
0
10
20
30
ID - Drain Current(A)
40
0
50
rDS(on) - On-Resistance(�)
(Normalized)
VGS- Gate-to-Source Voltage(V)
2.00
VDS=10V
ID=15A
6
4
2
0
4
8
12
12
18
24
30
On-Resistance vs. Junction Temperature
10
0
6
VDS- Drain-to-Source Voltage(V)
Gate Charge
8
0
16
20
1.75
1.50
1.25
1.00
0.75
0.50
-50
24
Qg - Total Gate Charge(nC)
VGS=10V
ID=15A
-25
0
25
50
75
100
TJ- Junction Temperature(° C)
�
�
5-3
125
150
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Single N-channel MOSFET
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ELM34414AA-N
On-Resistance vs.Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.040
rDS(ON) - On-Resistance(�)
IS - Source Current(A)
60
TJ=150° C
10
TJ=25° C
0.032
0.024
0.016
0.000
1
0.00
0.2
0.4
0.6
0.8
1.0
VSD- Source-to-Drain Voltage(V)
ID=15A
0.008
1.2
0
Threshold Voltage
6
8
10
50
ID = 250�A
0.2
40
0.0
Power(W)
VGS(th) Variance(V)
4
Single Pulse Power
0.4
-0.2
-0.4
30
TA=25° C
20
10
-0.6
-0.8
-50
-25
0
25
50
75
100
TJ- Temperature(° C)
0
10-2
125 150
Safe Operating Area, Junction-to Ambient
100�s,10�s
Limited by rDS(on)
10
1ms
1
10ms
100ms
0.1
1s
TA=25°C
Single Pulse
10s
dc,100s
0.01
0.1
1
10-1
1
Time(sec)
100
ID - Drain Current(A)
2
VGS - Gate-to-Source Voltage(V)
10
100
VDS- Drain-to-Source Voltage(V)
�
5-4
10
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Single N-channel
MOSFET
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ELM34414AA-N
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
0.02
Single Pulse
0.01
10
-4
10
t2
t1
1. Duty Cycle, D�= t2
2. R� J�A(t) = 50�° CW
3. TJM - TA =�PDM�*�R� �JA(t)
4. Surface Mounted
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
5-5
� �
10
100
600
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