elm34418aa

Single N-channel MOSFET
ELM34418AA-N
■General description
■Features
ELM34418AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=22A
Rds(on) < 4.0mΩ (Vgs=10V)
Rds(on) < 5.0mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
30
V
Gate-source voltage
Vgs
±20
22
17
V
100
49
119
A
A
mJ
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
Id
Idm
Las
Eas
L=0.1mH
Tc=25°C
Tc=70°C
Operating junction and storage temperature range
Power dissipation
Pd
Tj, Tstg
A
2.7
1.7
-55 to 150
3
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Steady-state
Symbol
Rθjc
Maximum junction-to-ambient
Steady-state
Rθja
■Pin configuration
Typ.
Max.
25
Unit
Note
°C/W
45
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
SOURCE
SOURCE
3
4
5
SOURCE
GATE
DRAIN
6
7
8
DRAIN
DRAIN
DRAIN
4-1
D
G
S
Single N-channel MOSFET
ELM34418AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
Static drain-source on-resistance
Condition
Vds=20V, Vgs=0V, Ta=55°C
10
Vds=0V, Vgs=±20V
Gfs
Vds=5V, Id=20A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
If=20A, Vgs=0V
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss Vgs=0V, Vds=15V, f=1MHz
Crss
Total gate charge(Vgs=4.5V)
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Vgs=0V, Vds=0V, f=1MHz
Qg
Qgs
Vds=15V, Id=20A
Vgs=20V, Vds=15V
td(off) Id=20A, Rgen=6Ω
tf
trr
Qrr
V
1
Vgs(th) Vds=Vgs, Id=250μA
Vgs=10V, Id=20A
Rds(on)
Vgs=4.5V, Id=16A
Rg
30
Vds=24V, Vgs=0V
Forward transconductance
Gate resistance
SWITCHING PARAMETERS
Total gate charge(Vgs=10V)
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
If=20A, dIf/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%;
2. Independent of operating temperature;
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
1.0
μA
±100
nA
1.5
3.2
3.0
4.0
V
3.7
5.0
100
1
22
mΩ
1
S
1
V
A
1
2700
392
302
pF
pF
pF
0.9
Ω
60
31
9
nC
nC
nC
2
2
2
14
25
nC
ns
2
2
12
ns
2
56
ns
2
10
27
ns
ns
2
15
nC
Single N-channel MOSFET
ELM34418AA-N
PV510BA
N-Channel Enhancement Mode
NIKO-SEM
SOP-8
■Typical electrical and thermalField
characteristics
Effect Transistor
Halogen-Free & Lead-Free
Output Characteristics
Transfer Characteristics
30
VGS=10V
VGS=7V
VGS=5V
VGS=4.5V
VGS=3.5V
24
ID, Drain-To-Source Current(A)
ID, Drain-To-Source Current(A)
30
18
VGS=3V
12
VGS=2.5V
6
24
18
12
25�
6
125�
0
0
0
1
2
3
4
0
1
VDS, Drain-To-Source Voltage(V)
4
3500
3000
C , Capacitance(pF)
1.6
1.4
1.2
1.0
VGS=10V
ID=20A
0.8
-50
-25
0
25
50
75
100
125
CISS
2500
2000
1500
1000
500
0
150
COSS
CRSS
0
5
TJ , Junction Temperature(C)
10
15
20
25
30
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
Source-Drain Diode Forward Voltage
100
10
VDS=15V
ID=20A
8
IS , Source Current(A)
VGS , Gate-To-Source Voltage(V)
3
Capacitance Characteristic
1.8
Normalized Drain to Source
ON-Resistance
2
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
0.6
-20�
6
4
10
150�
1
25�
2
0
0
10
20
30
40
50
0.1
60
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-To-Drain Voltage(V)
Qg , Total Gate Charge(nC)
REV 0.9
0.0
3
4-3
C-44-1
Single N-channel MOSFET
Safe Operating Area
Single Pulse Maximum Power Dissipation
500
Operation in This Area
is Limited by RDS(ON)
100
450
�
Single Pulse
R�JA = 45C/W
TA=25C
400
350
Power(W)
100uS
10
ID , Drain Current(A)
PV510BA
ELM34418AA-N
N-Channel
Enhancement Mode
SOP-8
Field Effect Transistor
Halogen-Free & Lead-Free
NIKO-SEM
1ms
10ms
1
300
250
200
100ms
0.01
150
NOTE :
1.VGS= 10V
2.TA=25C
3.R�JA = 45C/W
4.Single Pulse
0.1
0.1
100
DC
50
1
10
0
0.0001
100
VDS, Drain-To-Source Voltage(V)
0.001
0.01
0.1
1
Single Pulse Time(s)
10
100
Transient Thermal Response Curve
Transient Thermal Resistance
r(t) , Normalized Effective
10
1
Duty cycle=0.5
0.2
0.1
0.1
Notes
0.05
0.02
0.01
0.01
1.Duty cycle, D= t1 / t2
2.RthJA = 45 �/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
single pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
T1 , Square Wave Pulse Duration[sec]
REV 0.9
4
4-4
C-44-1
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