Single N-channel MOSFET ELM544634A-N ■General description ■Features ELM544634A-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=18A Rds(on) = 5.8mΩ (Vgs=10V) Rds(on) = 7.2mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit 30 V ±20 V Symbol Vds Vgs Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current(Tj=150°C) Pulsed drain current 18 15 50 Id Idm Tc=25°C Power dissipation Tc=70°C Operating junction and storage temperature range A A 2.8 Pd 1.8 -55 to 150 Tj, Tstg W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Max. 62.5 Unit °C/W ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 Typ. 5 Pin No. 1 Pin name SOURCE 2 3 4 SOURCE SOURCE GATE 5 6 7 DRAIN DRAIN DRAIN 8 DRAIN 5-1 D G S Single N-channel MOSFET ELM544634A-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=24V, Vgs=0V, Ta=85°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss Turn-on rise time Turn-off delay time Turn-off fall time 1.0 15 Qg Qgs Qgd nA 2.0 V A 4.8 5.8 Vgs=4.5V, Id=15A 6.0 7.2 Vds=15V, Id=10A Is=10A, Vgs=0V 24 0.8 Vgs=0V, Vds=15V, f=1MHz Vds=15V, Vgs=4.5V Id=10A td(on) Vgs=10V, Vds=15V tr RL=1.5Ω, Id=10A td(off) Rgen=1.0Ω tf 5-2 μA ±100 Vgs=10V, Id=18A Is Input capacitance Output capacitance Gate-source charge Gate-drain charge Turn-on delay time V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Gfs Vsd 30 Vds=24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit mΩ 1.3 S V 3.8 A 2800 480 pF pF 300 pF 22 8 7 42 nC nC nC 15 12 30 20 ns ns 30 50 ns 10 20 ns AFN4634WS Alfa-MOS 30V N-Channel Single N-channel MOSFET Technology Enhancement Mode MOSFET ELM544634A-N ■Typical electrical and thermal characteristics Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A May 2012 www.alfa-mos.com Page 3 5-3 AFN4634WS Alfa-MOS 30V N-Channel Technology Single N-channel MOSFET Enhancement Mode MOSFET ELM544634A-N Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A May 2012 www.alfa-mos.com Page 4 5-4 AFN4634WS Alfa-MOS 30V N-Channel Technology Single N-channel MOSFET Enhancement Mode MOSFET ELM544634A-N ■Test circuit and waveform Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A May 2012 www.alfa-mos.com Page 5 5-5