elm544634a

Single N-channel MOSFET
ELM544634A-N
■General description
■Features
ELM544634A-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=18A
Rds(on) = 5.8mΩ (Vgs=10V)
Rds(on) = 7.2mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
30
V
±20
V
Symbol
Vds
Vgs
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current(Tj=150°C)
Pulsed drain current
18
15
50
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Operating junction and storage temperature range
A
A
2.8
Pd
1.8
-55 to 150
Tj, Tstg
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Max.
62.5
Unit
°C/W
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
Typ.
5
Pin No.
1
Pin name
SOURCE
2
3
4
SOURCE
SOURCE
GATE
5
6
7
DRAIN
DRAIN
DRAIN
8
DRAIN
5-1
D
G
S
Single N-channel MOSFET
ELM544634A-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=24V, Vgs=0V, Ta=85°C
10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Max. body-diode continuous current
DYNAMIC PARAMETERS
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
Turn-on rise time
Turn-off delay time
Turn-off fall time
1.0
15
Qg
Qgs
Qgd
nA
2.0
V
A
4.8
5.8
Vgs=4.5V, Id=15A
6.0
7.2
Vds=15V, Id=10A
Is=10A, Vgs=0V
24
0.8
Vgs=0V, Vds=15V, f=1MHz
Vds=15V, Vgs=4.5V
Id=10A
td(on)
Vgs=10V, Vds=15V
tr
RL=1.5Ω, Id=10A
td(off)
Rgen=1.0Ω
tf
5-2
μA
±100
Vgs=10V, Id=18A
Is
Input capacitance
Output capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Gfs
Vsd
30
Vds=24V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit
mΩ
1.3
S
V
3.8
A
2800
480
pF
pF
300
pF
22
8
7
42
nC
nC
nC
15
12
30
20
ns
ns
30
50
ns
10
20
ns
AFN4634WS
Alfa-MOS
30V N-Channel
Single
N-channel
MOSFET
Technology
Enhancement Mode MOSFET
ELM544634A-N
■Typical electrical and thermal characteristics
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A May 2012
www.alfa-mos.com
Page 3
5-3
AFN4634WS
Alfa-MOS
30V N-Channel
Technology
Single N-channel MOSFET
Enhancement Mode MOSFET
ELM544634A-N
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A May 2012
www.alfa-mos.com
Page 4
5-4
AFN4634WS
Alfa-MOS
30V N-Channel
Technology
Single N-channel MOSFET
Enhancement Mode MOSFET
ELM544634A-N
■Test
circuit and waveform
Typical
Characteristics
©Alfa-MOS Technology Corp.
Rev.A May 2012
www.alfa-mos.com
Page 5
5-5
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