elm13400ca

Single N-channel MOSFET
ELM13400CA-S
■General description
■Features
ELM13400CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=30V
Id=5.8A (Vgs=10V)
Rds(on) < 28mΩ (Vgs=10V)
Rds(on) < 33mΩ (Vgs=4.5V)
Rds(on) < 52mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Continuous drain current
30
±12
5.8
Id
Ta=70°C
Pulsed drain current
4.9
30
1.4
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
V
V
1.0
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
65
85
43
90
125
60
°C/W
°C/W
°C/W
1
2
1
3
■Circuit
D
SOT-23(TOP VIEW)
3
Note
Pin No.
1
Pin name
GATE
2
3
SOURCE
DRAIN
G
S
4-1
Single N-channel MOSFET
ELM13400CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Rds(on)
Gfs
Vsd
1
5
μA
100
nA
1.1
1.4
V
A
22.8
28.0
32.0
39.0
27.3
43.3
33.0
52.0
Ta=55°C
0.7
30
Ta=125°C
Vgs=4.5V, Id=5A
Vgs=2.5V, Id=4A
Vds=5V, Id=5A
Is=1A, Vgs=0V
Ciss
Coss
Crss
Rg
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
Body diode reverse recovery time
Body diode reverse recovery charge
V
10
15
0.71
1.00
2.5
A
1030
pF
99
77
1.2
3.6
pF
pF
Ω
9.7
12.0
nC
823
Vgs=0V, Vds=15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Qg
Vgs=4.5V, Vds=15V, Id=5.8A
mΩ
S
V
Is
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Turn-on rise time
Turn-off delay time
Turn-off fall time
30
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Vgs=10V, Id=5.8A
Static drain-source on-resistance
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
1.6
3.1
nC
nC
td(on)
3.3
5.0
ns
tr
Vgs=10V, Vds=15V
td(off) RL=2.7Ω, Rgen=3Ω
4.8
26.3
7.0
40.0
ns
ns
4.1
16.0
8.9
6.0
20.0
12.0
ns
ns
nC
tf
trr
Qrr
If=5A, dIf/dt=100A/μs
If=5A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
ELM13400CA-S
■Typical electrical and thermal characteristics
25
20
10V
3V
2.5V
15
12
10
8
Vgs=2V
5
125°C
0
0
1
2
3
4
Vds(Volts)
Fig 1: On-Region Characteristics
5
0
60
0.5
1
1.5
2
2.5
Vgs(Volts)
Figure 2: Transfer Characteristics
3
Normalized On-Resistance
1.8
50
Vgs=2.5V
40
30
Vgs=4.5V
20
Vgs=10V
1.6
Vgs=4.5V
1.4
Vgs=10V
1.2
Vgs=2.5V
1
0.8
10
0
5
10
15
20
0
25
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
60
1.0E+00
1.0E-01
50
Is (A)
125°C
40
30
75
100
125
150
175
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
25°C
20
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Id=5A
Rds(on) (m� )
25°C
4
0
Rds(on) (m� )
Vds=5V
16
4.5V
Id(A)
Id (A)
20
1.0E-05
1.0E-06
10
0
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.2
Single N-channel MOSFET
ELM13400CA-S
5
1200
Capacitance (pF)
4
Vgs (Volts)
1400
Vds=15V
Id=5A
3
2
1
1000
Ciss
800
600
400
Coss
200
0
0
2
4
6
8
10
0
12
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1ms
1.0
10ms
10s
DC
0.1
1
10
100
30
20
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z� ja Normalized Transient
Thermal Resistance
25
Tj(max)=150°C
Ta=25°C
0
0.001
Vds (Volts)
10
20
10
1s
0.1
15
30
100�s
0.1s
10
40
Tj(max)=150°C
Ta=25°C
Rds(on)
10.0 limited
5
Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
Id (Amps)
100.0
Crss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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