elm13402ca

Single N-channel MOSFET
ELM13402CA-S
■General description
■Features
ELM13402CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=30V
Id=4A (Vgs=10V)
Rds(on) < 55mΩ (Vgs=10V)
Rds(on) < 70mΩ (Vgs=4.5V)
Rds(on) < 110mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Vds
Vgs
30
±12
V
V
Id
4.0
3.4
A
1
Idm
15
A
2
Pd
1.4
1.0
W
1
Tj, Tstg
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
70
100
63
90
125
80
°C/W
°C/W
°C/W
1
2
1
3
■Circuit
D
SOT-23(TOP VIEW)
3
Note
Pin No.
1
Pin name
GATE
2
3
SOURCE
DRAIN
G
S
4-1
Single N-channel MOSFET
ELM13402CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
100
nA
1.0
1.4
V
A
45
55
66
80
Vgs=4.5V, Id=3A
Vgs=2.5V, Id=2A
55
83
70
110
Vds=5V, Id=4A
Is=1A, Vgs=0V
8
0.8
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Vgs=10V, Id=4A
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Gfs
Vsd
Ciss
mΩ
1.0
S
V
2.5
A
390.0
pF
54.5
41.0
3
pF
pF
Ω
4.34
nC
0.60
1.38
nC
nC
td(on)
3.3
ns
tr
Vgs=10V, Vds=15V
td(off) RL=3.75Ω, Rgen=6Ω
1.0
21.7
ns
ns
2.1
12.0
6.3
ns
ns
nC
Coss
Crss
Rg
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
Body diode reverse recovery time
Body diode reverse recovery charge
Ta=125°C
0.6
10
Is
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Turn-on rise time
Turn-off delay time
Turn-off fall time
Ta=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Rds(on)
V
μA
Idss
Static drain-source on-resistance
30
1
5
Zero gate voltage drain current
Gate threshold voltage
On state drain current
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Vgs=0V, Vds=15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Qg
tf
trr
Qrr
Vgs=4.5V, Vds=15V, Id=4A
If=4A, dIf/dt=100A/μs
If=4A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
ELM13402CA-S
■Typical electrical and thermal characteristics
15
10
10V
3V
Vds=5V
8
4.5V
9
Id(A)
Id (A)
12
2.5V
6
3
6
4
125°C
2
Vgs=2V
0
25°C
0
0
1
2
3
4
5
0
0.5
1.5
2
2.5
3
3.5
Vgs(Volts)
Figure 2: Transfer Characteristics
Vds (Volts)
Fig 1: On-Region Characteristics
150
1.8
Normalized On-Resistance
125
Rds(on) (m� )
1
Vgs=2.5V
100
75
Vgs=4.5V
50
25
Vgs=10V
0
1.6
Vgs=4.5V
Vgs=10V
1.4
1.2
Vgs=2.5V
1
0.8
0
2
4
6
8
10
0
25
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
200
1.0E+00
Id=2A
100
1.0E-01
Is (A)
Rds(on) (m� )
150
125°C
50
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
25°C
1.0E-05
1.0E-06
0
0
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.2
Single N-channel MOSFET
ELM13402CA-S
5
500
Capacitance (pF)
4
Vgs (Volts)
600
Vds=15V
Id=4A
3
2
1
Ciss
400
300
200
Coss
100
0
0
1
2
3
4
0
5
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
Rds(on)
limited
1ms
30
Tj(max)=150°C
Ta=25°C
DC
0.1
1
10
0
0.001
100
Vds (Volts)
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
25
5
10s
10
20
10
1s
0.1
15
15
10�s
100�s
0.1s 10ms
1.0
10
20
Power (W)
Id (Amps)
10.0
5
Vds (Volts)
Figure 8: Capacitance Characteristics
Tj(max)=150°C
Ta=25°C
100.0
Crss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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