elm13404ca

Single N-channel MOSFET
ELM13404CA-S
■General description
■Features
ELM13404CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=5.8A (Vgs=10V)
Rds(on) < 28mΩ (Vgs=10V)
Rds(on) < 43mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
30
V
Gate-source voltage
Vgs
±20
V
Ta=25°C
Continuous drain current
5.8
Id
Ta=70°C
Pulsed drain current
4.9
20
1.4
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
1
A
2
W
1.0
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
65
85
43
90
125
60
°C/W
°C/W
°C/W
1
2
1
3
■Circuit
D
SOT-23(TOP VIEW)
3
Note
Pin No.
Pin name
1
2
3
GATE
SOURCE
DRAIN
G
S
4-1
Single N-channel MOSFET
ELM13404CA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=30V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
30
Ta=55°C
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=250μA
1.0
On state drain current
Id(on) Vgs=4.5V, Vds=5V
20
Static drain-source on-resistance
Rds(on)
Vgs=10V, Id=5.8A
V
Ta=125°C
Vgs=4.5V, Id=5A
μA
100
nA
3.0
V
A
22.5
31.3
28.0
38.0
mΩ
34.5
43.0
mΩ
Forward transconductance
Gfs
Vds=5V, Id=5.8A
Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current 2
DYNAMIC PARAMETERS
Vsd
Is
Is
Is=1A
0.76
1.00
2.5
20.0
V
A
A
Input capacitance
Output capacitance
Ciss
Coss
820
Vgs=0V, Vds=15V, f=1MHz
680
102
pF
pF
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Vgs=0V, Vds=0V, f=1MHz
77
3.0
108
3.6
pF
Ω
13.88
17.00
nC
Total gate charge (4.5V)
Qg
6.78
8.10
nC
1.80
3.12
4.6
6.5
nC
nC
ns
Qg
Vgs=10V, Vds=15V, Id=5.8A
10.0
1.9
1
5
1.5
14.5
S
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Qgs
Qgd
td(on)
Vgs=10V, Vds=15V
3.8
5.7
ns
Turn-off delay time
Turn-off fall time
td(off) RL=2.7Ω, Rgen=3Ω
tf
20.9
5.0
30.0
7.5
ns
ns
16.1
7.4
21.0
10.0
ns
nC
Body diode reverse recovery time
Body diode reverse recovery charge
tr
trr
Qrr
If=5.8A, dIf/dt=100A/μs
If=5.8A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
AO3404
ELM13404CA-S
TYPICAL
ELECTRICAL
■Typical
electricalAND
andTHERMAL
thermal CHARACTERISTIC
characteristics S
10V
25
20
6V
5V
4.5V
Id (A)
20
15
3.5V
10
12
8
125°C
4
Vgs=3V
5
Vds=5V
16
4V
Id (A)
30
25°C
0
0
0
1
2
3
4
0
5
0.5
60
2
2.5
3
3.5
4
4.5
Normalized On-Resistance
1.6
50
Rds(on) (m� )
1.5
Vgs (Volts)
Figure 2: Transfer Characteristics
Vds (Volts)
Fig 1: On-Region Characteristics
Vgs=4.5V
40
30
20
Vgs=10V
10
0
5
10
15
1.5
Vgs=10V
Id=5A
1.4
Vgs=4.5V
1.3
1.2
1.1
1
0.9
0.8
20
0
Id (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
70
60
1.0E+00
Id=5A
50
40
Is Amps
Rds(on) (m� )
1
125°C
1.0E-01
1.0E-02
30
1.0E-03
20
1.0E-04
25°C
10
2
4
6
8
10
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
125°C
25°C
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body diode characteristics
4-3
Alpha & Omega Semiconductor, Ltd.
www.aosmd.co
Single N-channel MOSFET
AO3404
ELM13404CA-S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
f=1MHz
Vgs=0V
900
800
Capacitance (pF)
8
Vgs (Volts)
1000
Vds=15V
Id=5.8A
6
4
2
700
Ciss
600
500
400
300
200
Coss
100
0
0
2
4
6
8
10
12
Crss
0
14
0
Qg (nC)
Figure 7: Gate-Charge characteristics
100
10ms
1s
DC
10
100
Vds (Volts)
10
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
30
20
0
0.001
0.1
1
25
10
10s
0.1
20
Tj(max)=150°C
Ta=25°C
30
100�s 10�s
0.1s
1
15
40
Power W
Id (Amps)
1ms
10
10
Vds (Volts)
Figure 8: Capacitance Characteristics
Tj(max)=150°C
Ta=25°C
Rds(on)
limited
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
T
4-4
100
1000
www.aosmd.com
Similar pages