elm13424ca

Single N-channel MOSFET
ELM13424CA-S
■General description
■Features
ELM13424CA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 2.5V.
•
•
•
•
•
Vds=30V
Id=3.8A (Vgs=10V)
Rds(on) < 55mΩ (Vgs=10V)
Rds(on) < 65mΩ (Vgs=4.5V)
Rds(on) < 85mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
Symbol
Vds
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Vgs
±12
V
Id
3.8
3.1
A
Idm
15
A
3
Pd
1.4
0.9
W
2
Tj, Tstg
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
70
Max.
90
Unit
°C/W
Note
1
100
63
125
80
°C/W
°C/W
1, 4
■Circuit
D
SOT-23(TOP VIEW)
3
1
2
Pin No.
Pin name
1
2
3
GATE
SOURCE
DRAIN
G
S
5-1
Single N-channel MOSFET
ELM13424CA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=30V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
30
Ta=55°C
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=250μA
0.5
On state drain current
Id(on) Vgs=10V, Vds=5V
15
Rds(on)
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Gfs
Vsd
Is
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (Vgs=10V)
Crss
Rg
Total gate charge (Vgs=4.5V)
nA
1.5
V
A
Vgs=4.5V, Id=3.5A
47
65
mΩ
Vgs=2.5V, Id=1A
59
85
mΩ
Vds=5V, Id=3.8A
Is=1A, Vgs=0V
14
0.75
1.00
1.5
S
V
A
Vgs=0V, Vds=15V, f=1MHz
185
25
235
35
285
45
pF
pF
Vgs=0V, Vds=0V, f=1MHz
10
2.1
18
4.3
25
6.5
pF
Ω
10.00
12.00
nC
Vgs=10V, Vds=15V, Id=3.8A
Qgs
Qgd
td(on)
Turn-off delay time
Turn-off fall time
td(off) RL=3.95Ω, Rgen=3Ω
tf
trr
Qrr
±100
mΩ
Ta=125°C
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Body diode reverse recovery time
Body diode reverse recovery charge
μA
55
84
Qg
tr
1.0
1
5
43
70
Vgs=10V, Id=3.8A
Static drain-source on-resistance
V
Vgs=10V, Vds=15V
If=3.8A, dIf/dt=100A/μs
If=3.8A, dIf/dt=100A/μs
4.70
0.95
1.60
3.5
nC
nC
ns
1.5
ns
17.5
2.5
ns
ns
8.5
2.6
11.0
3.5
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in2 FR-4 board of 2oz. Copper, in still air environment with
Ta =25°C. The value in any given application depends on the user's specific board design.
2. The power dissipation Pd is based on Tj(Max)=150°C, using≤10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature Tj(Max)=150°C. Ratings are based on low frequency and duty
cycles to keep initial Tj=25°C.
4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.
6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2
FR-4 board with 2oz.Copper, assuming a maximum junction temperature of Tj(Max)=150°C. The SOA curve provides a
single pulse rating.
5-2
Single N-channel MOSFET
AO3424
ELM13424CA-S
■Typical electrical and thermal characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
10V
3V
12
2.5V
8
4.5V
9
6
ID(A)
ID (A)
VDS=5V
6
VGS=2.0V
125�C
4
25�C
2
3
0
0
0
1
2
3
4
0
5
80
1
1.5
2
2.5
3
Normalized On-Resistance
1.8
VGS=2.5V
70
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note 5)
VDS (Volts)
Fig 1: On-Region Characteristics (Note 5)
60
VGS=4.5V
50
40
VGS=10V
VGS=4.5V
ID=3.5A
1.6
1.4
VGS=10V
17
ID=3.8A
1.2
VGS=2.5V
ID=1A
1
5
2
10
0.8
30
0
2
0
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note 5)
120
4
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note )5)
1.0E+02
ID=3.8A
1.0E+01
100
40
125�C
80
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
60
1.0E-01
125�C
1.0E-02
1.0E-03
40
25�C
25�C
1.0E-04
1.0E-05
20
0
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note 5)
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note 5)
5-3
1.2
Single N-channel MOSFET
AO3424
ELM13424CA-S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
400
VDS=15V
ID=3.8A
350
300
Capacitance (pF)
VGS (Volts)
8
6
4
250
Ciss
200
150
100
2
Coss
50
0
Crss
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
12
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
100.0
TA=25�C
1000
RDS(ON)
limited
10µs
0µs
100µs
1.0
0.1
Power (W)
ID (Amps)
10.0
1ms
10ms
TJ(Max)=150�C
TA=25�C
10
10s
DC
0.0
0.01
0.1
VDS
1
(Volts)
10
1
0.00001
100
Zθ JA Normalized Transient
Thermal Resistance
1
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 6)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 6)
10
100
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125�C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note 6)
5-4
100
1000
Single N-channel MOSFET
AO3424
ELM13424CA-S
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+ Vds
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
R es
e s istiv e S w itch ing
in g T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
Rg
90 %
+
VDC
Vdd
-
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D io d e R eco very T est C ircu it & W a vefo rm s
Q rr = -
V ds +
V ds -
DUT
Isd
V gs
Ig
Idt
V gs
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V ds
5-5
V dd
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