elm13434ca

Single N-channel MOSFET
ELM13434CA-S
■General description
■Features
The ELM13434CA-S uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected.
•
•
•
•
•
Vds=30V
Id=4.2A (Vgs=10V)
Rds(on) < 52mΩ (Vgs=10V)
Rds(on) < 75mΩ (Vgs=4.5V)
ESD protected
■Maximum absolute ratings
Ta=25°C. Unless otherwise noted.
Parameter
Symbol
Limit
10sec
Steady-state
Unit
Drain-source voltage
Vds
30
V
Gate-source voltage
Vgs
±20
V
Continuous drain current
Ta=25°C
Ta=70°C
4.2
3.3
Id
Pulsed drain current
3.5
2.8
Idm
Tc=25°C
Tc=70°C
Power dissipation
30
1.40
0.90
Pd
Junction and storage temperature range
Tj, Tstg
1.00
0.64
-55 to 150
Note
A
1, 6
A
2
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
70
Max.
90
Unit
°C/W
100
63
125
80
°C/W
°C/W
1
2
1
3
■Circuit
SOT-23(TOP VIEW)
3
Note
D
Pin No.
Pin name
1
2
GATE
SOURCE
3
DRAIN
G
S
4-1
Single N-channel MOSFET
ELM13434CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=30V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±16V
30
1
Ta=55°C
1.32
43
1.80
52
V
58
74
Vgs=4.5V, Id=2A
59
75
mΩ
Vds=5V, Id=4.2A
Is=1A, Vgs=0V
8.5
0.77
1.00
S
V
1.8
A
340
pF
pF
Static drain-source on-resistance
Rds(on)
Max. body-diode continuous current
DYNAMIC PARAMETERS
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Total gate charge (4.5V)
Qg
Qg
Gate-source charge
Gate-drain charge
Qgs
Qgd
Turn-on delay time
Turn-on rise time
td(on)
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Vgs=10V, Id=4.2A
Ta=125°C
1.00
Is
Input capacitance
Output capacitance
μA
μA
Vgs(th) Vds=Vgs, Id=250μA
Gfs
Vsd
5
10
Gate threshold voltage
Forward transconductance
Diode forward voltage
V
Vgs=0V, Vds=15V, f=1MHz
269
65
Vgs=0V, Vds=0V, f=1MHz
41
1.0
Vgs=10V, Vds=15V, Id=4.2A
5.70
3.00
1.5
7.20
1.37
0.65
mΩ
pF
Ω
nC
nC
nC
nC
2.6
3.8
ns
Vgs=10V, Vds=15V
5.5
8.0
ns
td(off) RL=3.6Ω, Rgen=3Ω
tf
15.2
3.7
23.0
5.5
ns
ns
15.5
7.1
21.0
ns
nC
tr
trr
Qrr
If=4.2A, dIf/dt=100A/μs
If=4.2A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using<300μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
6. The current rating is based on the t≤10s thermal resistance rating.
4-2
Single N-channel MOSFET
AO3434
ELM13434CA-S
■Typical electrical and thermal characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
4.5V
15
4V
9
3.5V
10
VDS=5V
12
6V
ID(A)
ID (A)
25
15
8V
10V
6
125�C
3
5
25�
VGS=3V
0
0
1
2
0
3
4
5
0
VDS (Volts)
Fig 1: On-Region Characteristics
3
4
5
6
1.8
Normalized On-Resistance
VGS=4.5V
70
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics
80
60
50
40
VGS=10V
30
VGS=10V
Id=4.2A
1.6
1.4
1.2
VGS=4.5V
Id=3.5A
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
102
ID=4.2A
90
78
1.0E+00
125�
1.0E-01
IS (A)
RDS(ON) (mΩ
Ω)
1
66
125�
1.0E-02
25�C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
54
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
APPLICATIONS 25�
OR USES
OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
C
42
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30
2
4
6
8
1.0E-05
10
0.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
4-3
1.2
Single N-channel MOSFET
AO3434
ELM13434CA-S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
500
10
VDS=15V
ID=4.2A
400
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
300
200
2
0
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
30
10µs
RDS(ON)
limited
25
100µs
1.0
1ms
10ms
0.1
TJ(Max)=150�C
TA=25�C
20
15
10
0.1s
DC
TJ(Max)=150�C
TA=25�C
Power (W)
10.0
ID (Amps)
Crss
0
6
100.0
5
10s
0
0.0
0.01
0.1
1
VDS (Volts)
10
0.001
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
Zθ JA Normalized Transient
Thermal Resistance
Coss
100
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125�C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
PD NOT ASSUME ANY LIABILITY ARISING
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
0.0001
1
10
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
4-4
100
1000
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