Single N-channel MOSFET ELM23400CA-S http://www.elm-tech.com ■General description ■Features ELM23400CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V ±12 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current 5.7 4.7 30 Id Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg Vds=30V Id=5.7A Rds(on) = 32mΩ (Vgs=4.5V) Rds(on) = 40mΩ (Vgs=2.5V) A 1.25 0.80 -55 to 150 A 3 W 2 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Typ. Max. Unit Note Rθja 100 125 °C/W 1 ■Pin configuration ■Circuit D SOT-23(TOP VIEW) 3 1 2 Pin No. Pin name 1 2 3 GATE SOURCE DRAIN G S Rev.1.0 3- 1 Single N-channel MOSFET ELM23400CA-S http://www.elm-tech.com ■Electrical characteristics Parameter Symbol Condition Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current BVdss Id=250μA, Vgs=0V Vds=30V, Vgs=0V Idss Vds=24V, Vgs=0V, Ta=125°C Gate-body leakage current Gate threshold voltage Igss Vds=0V, Vgs=±12V Vgs(th) Vds=Vgs, Id=250μA Static drain-source on-resistance Rds(on) Forward transconductance Gfs Diode forward voltage Max. body-diode continuous current Pulsed body-diode current DYNAMIC PARAMETERS Vsd Is Ism Input capacitance Ciss Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Coss Crss Rg 30 V 1 10 0.6 ±100 0.9 Vgs=4.5V, Id=4A 27 32 Vgs=2.5V, Id=3A Vds=10V, Id=5A 32 26 40 0.4 Is=1A, Vgs=0V nA V mΩ 4 S 1 2 30 Vgs=Vds=0V, Force current μA V A A 4 780 pF Vgs=0V, Vds=0V, f=1MHz 54 44 4 pF pF Ω Vgs=4.5V, Vds=10V, Id=4A 18.0 0.8 nC nC 4 4 Gate-drain charge Turn-on delay time Turn-on rise time Qgd td(on) tr Vgs=4.5V, Vds=10V, Id=1A 2.8 4.5 13.0 nC ns ns 4 4 4 Turn-off delay time td(off) Rgen=4Ω tf 27.0 8.3 ns ns 4 4 Gate-source charge Turn-off fall time Qg Qgs Vgs=0V, Vds=10V, f=1MHz NOTE : 1. The value of Rθja is measured with the device on 625mm² 70μ 2 layer copper 1.6t FR4 PCB in a still air environment with Ta=25°C. 2. The power dissipation Pd is based on Tj(max)=150°C, using ≤ 10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by temperature Tj(max)=150°C. Ratings are based on low frequency and duty cycles to keep initial Ta=25°C. 4. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. Rev.1.0 3- 2 Single N-channel MOSFET ELM23400CA-S PM3212NS ■Typical electricalMOSFETs and thermal characteristics 30V N-Channel Normalized On Resistance (m) ID , Continuous Drain Current (A) http://www.elm-tech.com TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature (℃ (℃) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform ID , Continuous Drain Current (A) Normalized Thermal Response (RθJA) Fig.3 Normalized Vth vs. TJ VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance Rev.1.0 Ver.1.00 Powermate Electronics Corp. 3- 3 3