elm23400ca

Single N-channel MOSFET
ELM23400CA-S
http://www.elm-tech.com
■General description
■Features
ELM23400CA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
low gate resistance.
•
•
•
•
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±12
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
5.7
4.7
30
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
Vds=30V
Id=5.7A
Rds(on) = 32mΩ (Vgs=4.5V)
Rds(on) = 40mΩ (Vgs=2.5V)
A
1.25
0.80
-55 to 150
A
3
W
2
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Typ.
Max.
Unit
Note
Rθja
100
125
°C/W
1
■Pin configuration
■Circuit
D
SOT-23(TOP VIEW)
3
1
2
Pin No.
Pin name
1
2
3
GATE
SOURCE
DRAIN
G
S
Rev.1.0
3- 1
Single N-channel MOSFET
ELM23400CA-S
http://www.elm-tech.com
■Electrical characteristics
Parameter
Symbol
Condition
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
BVdss Id=250μA, Vgs=0V
Vds=30V, Vgs=0V
Idss
Vds=24V, Vgs=0V, Ta=125°C
Gate-body leakage current
Gate threshold voltage
Igss Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=250μA
Static drain-source on-resistance
Rds(on)
Forward transconductance
Gfs
Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS
Vsd
Is
Ism
Input capacitance
Ciss
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Rg
30
V
1
10
0.6
±100
0.9
Vgs=4.5V, Id=4A
27
32
Vgs=2.5V, Id=3A
Vds=10V, Id=5A
32
26
40
0.4
Is=1A, Vgs=0V
nA
V
mΩ
4
S
1
2
30
Vgs=Vds=0V, Force current
μA
V
A
A
4
780
pF
Vgs=0V, Vds=0V, f=1MHz
54
44
4
pF
pF
Ω
Vgs=4.5V, Vds=10V, Id=4A
18.0
0.8
nC
nC
4
4
Gate-drain charge
Turn-on delay time
Turn-on rise time
Qgd
td(on)
tr
Vgs=4.5V, Vds=10V, Id=1A
2.8
4.5
13.0
nC
ns
ns
4
4
4
Turn-off delay time
td(off) Rgen=4Ω
tf
27.0
8.3
ns
ns
4
4
Gate-source charge
Turn-off fall time
Qg
Qgs
Vgs=0V, Vds=10V, f=1MHz
NOTE :
1. The value of Rθja is measured with the device on 625mm² 70μ 2 layer copper 1.6t FR4 PCB in a still air environment
with Ta=25°C.
2. The power dissipation Pd is based on Tj(max)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by temperature Tj(max)=150°C. Ratings are based on low frequency and duty
cycles to keep initial Ta=25°C.
4. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
Rev.1.0
3- 2
Single N-channel MOSFET
ELM23400CA-S
PM3212NS
■Typical
electricalMOSFETs
and thermal characteristics
30V N-Channel
Normalized On Resistance (m)
ID , Continuous Drain Current (A)
http://www.elm-tech.com
TJ , Junction Temperature (℃)
Fig.2 Normalized RDSON vs. TJ
VGS , Gate to Source Voltage (V)
Normalized Gate Threshold Voltage (V)
TC , Case Temperature (℃)
Fig.1 Continuous Drain Current vs. TC
TJ , Junction Temperature (℃
(℃)
Qg , Gate Charge (nC)
Fig.4 Gate Charge Waveform
ID , Continuous Drain Current (A)
Normalized Thermal Response (RθJA)
Fig.3 Normalized Vth vs. TJ
VDS , Drain to Source Voltage (V)
Fig.6 Maximum Safe Operation Area
Square Wave Pulse Duration (s)
Fig.5 Normalized Transient Impedance
Rev.1.0
Ver.1.00
Powermate Electronics Corp.
3- 3
3
Similar pages