elm33404ca

Single N-channel MOSFET
ELM33404CA-S
■General description
■Features
ELM33404CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=3A
Rds(on) < 85mΩ (Vgs=10V)
Rds(on) < 115mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Symbol
Vgs
Gate-source voltage
Continuous drain current
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
±20
V
Ta=25°C
Ta=100°C
3
2
20
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=100°C
Junction and storage temperature range
Tj, Tstg
A
A
0.6
3
W
0.5
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Symbol
Steady-state
Steady-state
Rθjc
Rθja
■Pin configuration
Typ.
Max.
Unit
65
230
°C/W
°C/W
■Circuit
D
SOT-23(TOP VIEW)
3
1
2
Note
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
4-1
Single N-channel MOSFET
ELM33404CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=20V, Vgs=0V, Ta=125°C
10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
0.8
3
1.2
μA
±100
nA
2.5
V
A
Vgs=10V, Id=3A
48
85
mΩ
Vgs=4.5V, Id=1.5A
70
115
mΩ
Vds=15V, Id=3A
If=Is, Vgs=0V
16
1.5
S
V
Is
2.3
A
Ism
4.6
A
Gfs
Vsd
Ciss
Coss
Crss
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=10V
Max. body-diode continuous current
30
Vds=24V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
Vgs=0V, Vds=15V, f=1MHz
Vgs=10V, Vds=15V, Id=3A
Vgs=10V, Vds=15V, Id=3A
td(off) RL=1Ω, Rgen=2.5Ω
tf
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
1
1
1
1
3
450
pF
200
60
pF
pF
15.0
2.0
nC
nC
2
2
7.0
6.0
nC
ns
2
2
6.0
ns
2
20.0
ns
2
5.0
ns
2
NIKO-SEM
P8503BMG
N-Channel Logic Level Enhancement Mode
Field
Effect Transistor
Single
N-channel
MOSFET
SOT-23
Lead Free
ELM33404CA-S
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with
Source Current and Temperature.
IS,Reverse Drain Current(A)
5
1
VGS=0V
TJ=125°C
0.1
25°C
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD,Body Diode Forward Voltage(V)
3
4-3
Mar-22-2006
NIKO-SEM
SingleLogic
N-channel
MOSFET
N-Channel
Level Enhancement
Mode
Field Effect Transistor
ELM33404CA-S
4
4-4
P8503BMG
SOT-23
Lead Free
Mar-22-2006
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