Single N-channel MOSFET ELM33404CA-S ■General description ■Features ELM33404CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=3A Rds(on) < 85mΩ (Vgs=10V) Rds(on) < 115mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Symbol Vgs Gate-source voltage Continuous drain current Ta=25°C. Unless otherwise noted. Limit Unit Note ±20 V Ta=25°C Ta=100°C 3 2 20 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=100°C Junction and storage temperature range Tj, Tstg A A 0.6 3 W 0.5 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Symbol Steady-state Steady-state Rθjc Rθja ■Pin configuration Typ. Max. Unit 65 230 °C/W °C/W ■Circuit D SOT-23(TOP VIEW) 3 1 2 Note Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 4-1 Single N-channel MOSFET ELM33404CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=20V, Vgs=0V, Ta=125°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 0.8 3 1.2 μA ±100 nA 2.5 V A Vgs=10V, Id=3A 48 85 mΩ Vgs=4.5V, Id=1.5A 70 115 mΩ Vds=15V, Id=3A If=Is, Vgs=0V 16 1.5 S V Is 2.3 A Ism 4.6 A Gfs Vsd Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=10V Max. body-diode continuous current 30 Vds=24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vgs=0V, Vds=15V, f=1MHz Vgs=10V, Vds=15V, Id=3A Vgs=10V, Vds=15V, Id=3A td(off) RL=1Ω, Rgen=2.5Ω tf NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 1 1 1 1 3 450 pF 200 60 pF pF 15.0 2.0 nC nC 2 2 7.0 6.0 nC ns 2 2 6.0 ns 2 20.0 ns 2 5.0 ns 2 NIKO-SEM P8503BMG N-Channel Logic Level Enhancement Mode Field Effect Transistor Single N-channel MOSFET SOT-23 Lead Free ELM33404CA-S ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature. IS,Reverse Drain Current(A) 5 1 VGS=0V TJ=125°C 0.1 25°C -55°C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD,Body Diode Forward Voltage(V) 3 4-3 Mar-22-2006 NIKO-SEM SingleLogic N-channel MOSFET N-Channel Level Enhancement Mode Field Effect Transistor ELM33404CA-S 4 4-4 P8503BMG SOT-23 Lead Free Mar-22-2006