elm33410ca

Single N-channel MOSFET
ELM33410CA-S
■General description
■Features
ELM33410CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=20V
Id=5A
Rds(on) < 32mΩ (Vgs=4.5V)
Rds(on) < 50mΩ (Vgs=2.5V)
Rds(on) < 80mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
±12
V
Symbol
Vgs
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
5
4
30
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
A
1.25
3
W
0.80
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Steady-state
Symbol
Rθja
■Pin configuration
Typ.
75
Max.
100
Unit
°C/W
■Circuit
D
SOT-23(TOP VIEW)
3
1
2
Note
Pin No.
Pin name
1
2
GATE
SOURCE
3
DRAIN
G
S
4-1
Single N-channel MOSFET
ELM33410CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Condition
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
20
V
Vds=16V, Vgs=0V
1
Vds=16V, Vgs=0V, Ta=70°C
10
Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
0.45
30
0.75
μA
±100
nA
1.20
V
A
1
Vgs=4.5V, Id=5A
27
32
mΩ
Rds(on) Vgs=2.5V, Id=4A
38
50
mΩ
1
57
12
80
mΩ
S
1
1.3
V
1
1.3
30
A
A
3
Forward transconductance
Gfs
Vgs=1.8V, Id=2A
Vds=5V, Id=5A
Diode forward voltage
Vsd
If=Is, Vgs=0V
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS
Is
Ism
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Qgs
Qgd
Turn-on delay time
Turn-on rise time
td(on)
Turn-off delay time
Turn-off fall time
td(off) Rgen=0.2Ω
tf
740
90
pF
pF
Crss
66
pF
Qg
8.0
tr
Vgs=0V, Vds=10V, f=1MHz
Vgs=4.5V, Vds=10V, Id=5A
Vgs=4.5V, Vds=10V, Id=1A
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
12.0
3.6
2.0
nC
2
nC
nC
2
2
8
14
ns
2
6
12
ns
2
19
7
45
23
ns
ns
2
2
P3202CMG
N-Channel Logic Level Enhancement Mode
Field Effect Transistor
NIKO-SEM
SOT-23
Single N-channel MOSFET
Lead-Free
ELM33410CA-S
■Typical electrical and thermal characteristics
2.5V
3.0V
16
2
12
2.0V
8
4
1.5V
0
0.5
0
1
1.5
2
2.5
1.6
2.5V
1.4
DS(ON)
RDS(ON), On-resistance(� )
50
75
100
125
1
1.5
2
TA= 25° C
0.02
Is, Reverse Drain Current (A)
ID, Drain Current(A)
125°C
2
0.5
TA= 125° C
0.04
0
2
3
4
5
Body Diode Forword Voltage Variation with
Source Current and Temperature.
8
0
ID=2.5A
0.06
0
25°C
12
20
VGS, Gate to Source Voltage(V)
TA= -55°C
16
16
0.08
150
Transfer Characteristics.
VDS= 5V
12
0.1
TJ, Junction Temperature(°C)
20
8
On-Resistance Variation with Gate-to-Source Voltage.
0.8
25
4
ID, Drain Current(A)
1
0
4.5V
0
1.2
-25
4.0V
0.8
ID= 5A
VGS= 4.5V
0.6
-50
3.5V
1
3
On-Resistance Variation with Temperature.
1.4
3.0V
1.2
VGS, Drain to Source Voltage(V)
1.6
VGS= 2.0V
1.8
DS(ON)
ID, Drain current(A)
VGS= 4.5V
R , Normalized
Drain-source on-resistance
20
R , Normalized
Drain-source on-resistance
On-Resistance Variation with
Drain Current and Gate Voltage.
On-Region Characteristics.
2.5
VGS, Gate to Source Voltage(V)
100
3
4-3
TA= 125° C
1
-55°C
25°C
0.1
0.01
0.001
0.0001
0
3
VGS= 0V
10
0.2
0.4
0.6
0.8
1
VSD, Body Diode Forward Voltage(V)
1.2
Mar-22-2006
P3202CMG
N-Channel Logic Level Enhancement Mode
Field Effect Transistor
NIKO-SEM
SOT-23
Lead-Free
Single N-channel MOSFET
ELM33410CA-S
Capacitance Characteristics
1100
5
VDS= 5V
ID = 5A
f =1MHz
VGS=0 V
900
4
Capacitance(pF)
VGS, Gate-Saurce Voltage(V)
Gate-Charge Characteristics
10V
3
2
1
Ciss
700
500
300
Coss
Crss
100
0
0
2
4
6
8
0
10
Qg Gate Charge (nC)
0
12
16
20
VDS, Drain to Source Voltage(V)
Maxmum Safe Operating Area.
Single Puise Maximum Power Dissipation.
100
20
RDS(ON) LIMIT
1ms
10
10ms
100ms
1
10s
DC
1s
VGS =4.5V
SINGLE PULSE
R� JA=100°C/W
TA=25°C
0.1
0.01
0.1
SINGLE PULSE
R� JA=100°C/W
TA=25° C
15
Power (W)
ID,Drain Current(A)
8
4
12
8
4
10
1
100
VGS,Drain-Source Voltage(V)
0
0.0001
0.001
0.01
0.1
1
10
100
1000
Single Pulse Time(SEC)
1
0.5
D=0.5
0.2
0.1
0.05
0.02
0.01
0.2
R¿ JA(t) = r(t) * R¿
R¿ JA=100° C/W
0.1
0.05
0.02
0.01
t1
Single Pulse
t2
0.005
TJ-TA=P*R¿ JA(t)
Duty Cycle, D= t1/ t2
0.002
0.001
0.0001
��
P(pk)
r(t), Normalized Effective
Transient Thermal Resistance
Transisent Thermal Response Curve.
0.001
0.01
0.1
Time(SEC)
4-4
1
10
100
300
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