elm33414ca

Single N-channel MOSFET
ELM33414CA-S
■General description
■Features
ELM33414CA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 3.5V and internal
ESD protection is included.
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■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
60
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=100°C
Pulsed drain current
300
190
1
Id
Idm
Tc=25°C
Tc=100°C
Junction and storage temperature range
Power dissipation
Vds=60V
Id=300mA
Rds(on) < 2Ω (Vgs=10V)
Rds(on) < 3Ω (Vgs=4.5V)
Rds(on) < 5Ω (Vgs=3.5V)
ESD Rating : 2000V HBM
mA
A
0.35
0.14
-40 to 150
Pd
Tj, Tstg
3
W
°C
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Rθja
■Pin configuration
Typ.
Max.
Unit
350
°C/W
■Circuit
SOT-23(TOP VIEW)
3
1
2
Note
D
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
4-1
Single N-channel MOSFET
ELM33414CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=100μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Condition
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
60
V
Vds=48V, Vgs=0V
1
Vds=40V, Vgs=0V, Ta=125°C
10
Vds=0V, Vgs=±16V
±30
μA
2.5
V
A
1
Ω
1
S
1
1
Vgs(th) Vds=Vgs, Id=100μA
Id(on) Vgs=10V, Vds=10V
1.0
1
1.8
Vgs=10V, Id=200mA
1.6
2.0
Rds(on) Vgs=4.5V, Id=100mA
1.7
3.0
2.1
0.18
5.0
μA
Forward transconductance
Gfs
Vgs=3.5V, Id=10mA
Vds=20V, Id=200mA
Diode forward voltage
Vsd
If=200mA, Vgs=0V
1.2
V
Is
If=200mA, Vgs=0V
300
mA
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Ciss
Coss
Crss
Qg
Qgs
Vgs=0V, Vds=25V, f=1MHz
Vgs=10V, Vds=30V
Id=200mA
36
pF
10
6
pF
pF
1.6
0.2
nC
nC
2
2
Gate-drain charge
Turn-on delay time
Qgd
td(on) Vds=30V, Vgs=10V
1.0
30
nC
ns
2
2
Turn-off delay time
td(off) Id=200mA, Rgen=10Ω
125
ns
2
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4-2
Single N-channel MOSFET
ELM33414CA-S
N-Channel Logic Level Enhancement
Modecharacteristics
Field Effect Transistor
■Typical electrical and thermal
NIKO-SEM
Output Characteristics
VGS=10V
VGS=9 V
VGS=8 V
VGS=7 V
VGS=6 V
VGS=5 V
6.0E-01
VGS =3.5V
4.0E-01
2.0E-01
0.0E+00
0
1
2
3
4
0.6
0.4
25�
0.2
0
5
1
1.5
VDS, Drain-To-Source Voltage(V)
2.0
45
RDS(ON) �
1.8
40
RDS(ON) �
1.6
RDS(ON) �
1.4
RDS(ON) �
1.2
RDS(ON) �
1.0
RDS(ON) �
0.8
RDS(ON) �
0.6
RDS(ON) �
0.4
V GS=10V
ID=200m A
0
25
50
75
100
TJ , Junction Temperature(C)
125 150
4
CISS
30
25
20
15
COSS
10
CRSS
0
5
10
15
20
25
30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
1.0E+03
VDS=30V
ID =0.2A
1.0E+02
8
IS , Source Current(A)
VGS , Gate-To-Source Voltage(V)
3.5
5
Gate charge Characteristics
10
3
35
0
-25
2.5
Capacitance Characteristic
On-Resistance VS Temperature
-50
2
VGS, Gate-To-Source Voltage(V)
C , Capacitance(pF)
RDS(ON)ON-Resistance(OHM)
RDS(ON) �
SOT-23(S)
Halogen-Free & Lead-Free
Transfer Characteristics
0.8
ID, Drain-To-Source Current(A)
ID, Drain-To-Source Current(A)
8.0E-01
PZ2N7002M
1.0E+01
6
1.0E+00
4
T J =150° C
1.0E-01
T J =25° C
1.0E-02
2
0
1.0E-03
1.0E-04
0
0.4
0.8
1.2
1.6
0.1
Qg , Total Gate Charge(nC)
0.3
0.5
0.7
0.9
1.1
VSD, Source-To-Drain Voltage(V)
C-40-4
REV 0.93
3
4-3
1.3
Single N-channel MOSFET
ELM33414CA-S
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
NIKO-SEM
Safe Operating Area
10
PZ2N7002M
SOT-23(S)
Halogen-Free & Lead-Free
Single Pulse Maximum Power Dissipation
20
Operation in This
Area is Lim ited by
RDS(ON)
1m s
0.1
10m s
5
1S
10S
DC
0
0.001
1
10
0.001
100
VDS, Drain-To-Source Voltage(V)
Transient Thermal Resistance
0.01
0.1
1
10
Single Pulse Time(s)
Transient Thermal Response Curve
1.00E+01
r(t) , Normalized Effective
10
100m s
NOTE :
1.V GS= 10V
2.TA=25� C
3.R�JA = 350� C/W
4.Single Pulse
0.01
SINGLE PULSE
R�JA = 350� C/W
TA=25� C
15
�
Power(W)
ID , Drain Current(A)
1
1.00E+00
Duty Cycle=0.5
Note
0.2
1.00E-01
0.1
0.05
1.Duty cycle, D= t1 / t2
2.RthJA =350 oC/W
3.TJ-TA = P*RthJC(t)
4.RthJC(t) = r(t)*RthJA
0.02
0.01
single Pluse
1.00E-02
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
T1 , Square Wave Pulse Duration[sec]
C-40-4
REV 0.93
4
4-4
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