elm16400ea

Single N-channel MOSFET
ELM16400EA-S
■General description
■Features
ELM16400EA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 2.5V.
•
•
•
•
•
Vds=30V
Id=6.9A (Vgs=10V)
Rds(on) < 28mΩ (Vgs=10V)
Rds(on) < 33mΩ (Vgs=4.5V)
Rds(on) < 52mΩ (Vgs=2.5V)
■Maximum absolute ratings
Ta=25°C. Unless otherwise noted.
Parameter
Symbol
Limit
Unit
Drain-source voltage
Vds
30
V
Gate-source voltage
Vgs
±12
V
Ta=25°C
Continuous drain current
6.9
Id
Ta=70°C
Pulsed drain current
5.8
35
2.00
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
1.44
-55 to 150
Note
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Symbol
Typ.
Max.
Unit
Note
Maximum junction-to-ambient
Maximum junction-to-ambient
t≤10s
Steady-state
Rθja
47.5
74.0
62.5
110.0
°C/W
°C/W
1
Maximum junction-to-lead
Steady-state
Rθjl
37.0
50.0
°C/W
3
■Pin configuration
■Circuit
D
SOT-26(TOP VIEW)
6
1
5
2
4
3
Pin No.
Pin name
1
2
3
DRAIN
DRAIN
GATE
4
5
6
SOURCE
DRAIN
DRAIN
4-1
G
S
Single N-channel MOSFET
ELM16400EA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Rds(on)
Gfs
Vsd
1
5
μA
100
nA
1.1
1.4
V
A
22.3
28.0
31.5
39.0
26.8
42.8
33.0
52.0
mΩ
mΩ
1.00
S
V
3
A
1030
pF
99
77
1.2
3.6
pF
pF
Ω
9.60
12.00
nC
Ta=55°C
0.7
35
Ta=125°C
Vgs=4.5V, Id=6A
Vgs=2.5V, Id=5A
Vds=5V, Id=5A
Is=1A, Vgs=0V
Ciss
Coss
Crss
Rg
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
Body diode reverse recovery time
Body diode reverse recovery charge
V
10
15
0.71
Is
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Turn-on rise time
Turn-off delay time
Turn-off fall time
30
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Vgs=10V, Id=6.9A
Static drain-source on-resistance
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
823
Vgs=0V, Vds=15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Qg
1.65
3.00
nC
nC
td(on)
5.5
ns
tr
Vgs=10V, Vds=15V
td(off) RL=2.7Ω, Rgen=6Ω
5.1
37.0
ns
ns
4.2
16.0
8.9
ns
ns
nC
tf
trr
Qrr
Vgs=4.5V, Vds=15V, Id=5.8A
mΩ
If=5A, dIf/dt=100A/μs
If=5A, dIf/dt=100A/μs
20.0
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
ELM16400EA-S
■Typical electrical and thermal characteristics
25
20
10V
3V
Vds=5V
16
4.5V
2.5V
15
Id(A)
Id (A)
20
10
8
125°C
Vgs=2V
5
12
0
0
0
1
2
3
4
5
0
0.5
Vds (Volts)
Fig 1: On-Region characteristics
1.5
2
2.5
3
Normalized On-Resistance
1.8
50
Rds(on) (m� )
1
Vgs(Volts)
Figure 2: Transfer Characteristics
60
Vgs=2.5V
40
30
Vgs=4.5V
20
Vgs=10V
10
1.6
Vgs=4.5V
1.4
Vgs=10V
1.2
Vgs=2.5V
1
0.8
0
5
10
15
20
0
25
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
70
1.0E+01
60
1.0E+00
1.0E-01
50
Is (A)
125°C
40
30
125
150
175
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
25°C
20
100
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Id=5A
Rds(on) (m� )
25°C
4
1.0E-05
1.0E-06
10
0
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.2
Single N-channel MOSFET
ELM16400EA-S
5
1400
Vds=15V
Id=6.9A
4
1200
Capacitance (pF)
Vgs (Volts)
1000
3
2
1
800
600
400
Coss
Crss
200
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
0
12
0
Rds(on)
10.0 limited
1ms
1.0
10ms
10s
DC
1
10
100
20
Vds (Volts)
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
30
Tj(max)=150°C
Ta=25°C
0
0.001
0.1
10
25
Vds 15
(Volts) 20
Figure 8: Capacitance Characteristics
10
1s
0.1
10
30
100�s
0.1s
5
40
Tj(max)=150°C
Ta=25°C
Power (W)
0
Id (Amps)
Ciss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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