elm16408ea

Single N-channel MOSFET
ELM16408EA-S
■General description
■Features
ELM16408EA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V and internal
ESD protection is included.
•
•
•
•
•
•
•
Vds=20V
Id=8.8A (Vgs=10V)
Rds(on) < 18mΩ (Vgs=10V)
Rds(on) < 20mΩ (Vgs=4.5V)
Rds(on) < 25mΩ (Vgs=2.5V)
Rds(on) < 32mΩ (Vgs=1.8V)
ESD Rating : 2000V HBM
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
20
±12
8.8
7.0
40
Id
Pulsed drain current
Idm
Tc=25°C
Tc=70°C
Power dissipation
Pd
Junction and storage temperature range
Tj, Tstg
V
V
2.00
1.28
-55 to 150
A
1
A
2
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
47.5
Max.
62.5
Unit
°C/W
74.0
37.0
110.0
40.0
°C/W
°C/W
1
5
2
4
3
1
3
■Circuit
SOT-26(TOP VIEW)
6
Note
D
Pin No.
Pin name
1
2
3
DRAIN
DRAIN
GATE
4
5
6
SOURCE
DRAIN
DRAIN
4-1
G
S
Single N-channel MOSFET
ELM16408EA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Gate-source breakdown voltage
Gate threshold voltage
On state drain current
Igss
BVgso
Vgs(th)
Id(on)
20
Vds=16V, Vgs=0V
Static drain-source on-resistance
10
25
±10
Ta=55°C
Vds=0V, Vgs=±10V
Vds=0V, Ig=±250μA
Vds=Vgs, Id=250μA
Vgs=4.5V, Vds=5V
Vgs=10V, Id=8.8A
V
Ta=125°C
Rds(on) Vgs=4.5V, Id=8A
Vgs=2.5V, Id=6A
Vgs=1.8V, Id=4A
Forward transconductance
Gfs Vds=5V, Id=8.8A
Diode forward voltage
Vsd Is=1A
Max. body-diode continuous current
Is
DYNAMIC PARAMETERS
Input capacitance
Ciss
Output capacitance
Coss Vgs=0V, Vds=10V, f=1MHz
Reverse transfer capacitance
Crss
Gate resistance
Rg Vgs=0V, Vds=0V, f=1MHz
SWITCHING PARAMETERS
Total gate charge
Qg
Gate-source charge
Qgs Vgs=4.5V, Vds=10V, Id=8.8A
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Vgs=10V, Vds=10V
tr
Turn-on rise time
td(off) RL=1.1Ω, Rgen=3Ω
Turn-off delay time
Turn-off fall time
tf
Body diode reverse recovery time
trr
If=8.8A, dIf/dt=100A/μs
Body diode reverse recovery charge
Qrr If=8.8A, dIf/dt=100A/μs
±12
0.50
40
0.75
1.00
14.4
18.5
16.0
20.5
25.6
33
0.72
18.0
23.0
20.0
25.0
32.0
1810
232
200
1.6
2200
17.9
1.5
4.7
3.3
5.9
44.0
7.7
22.0
9.8
22.0
1.00
3
2.2
27.0
μA
μA
V
V
A
mΩ
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
ELM16408EA-S
■Typical electrical and thermal characteristics
40
10V
20
4.5V
2V
2.5V
Id(A)
Id (A)
Vds=5V
16
30
20
12
125°C
8
10
4
Vgs=1.5V
0
0
0
1
2
3
4
Vds (Volts)
Fig 1: On-Region Characteristics
0
5
40
0.5
1
1.5
2
Vgs(Volts)
Figure 2: Transfer Characteristics
2.5
1.6
Vgs=2.5V,6A
30
Normalized On-Resistance
Vgs=1.8V
Rds(on) (m� )
25°C
Vgs=4.5V
20
0
0
5
10
15
Vgs=1.8V, 4A
1.2
Vgs=10V
10
Vgs=4.5V, 8A
1.4
Vgs=2.5V
Vgs=10V, 8.8A
1
0.8
20
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
40
1.0E+00
Id=6A
125°C
1.0E-01
125°C
Is (A)
Rds(on) (m� )
30
20
1.0E-02
25°C
25°C
1.0E-03
10
1.0E-04
0
0
2
4
6
8
1.0E-05
10
0.0
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body-Diode Characteristics
4-3
1.2
Single N-channel MOSFET
ELM16408EA-S
5
2800
Vds=10V
Id=8.8A
2400
Capacitance (pF)
Vgs (Volts)
4
3
2
2000
1600
1200
Coss
800
1
Crss
400
0
0
0
4
8
12
16
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
20
100.0
Rds(on)
limited
100�s
10ms
0.1s
1.0
1s
Tj(max)=150°C
Ta=25°C
Z� ja Normalized Transient
Thermal Resistance
Tj(max)=150°C
Ta=25°C
10
10s
0.1
0
0.001
1
10
Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
20
20
DC
0.1
10
15
Vds (Volts)
Figure 8: Capacitance Characteristics
30
1ms
Power (W)
10.0
5
40
10�s
Id (Amps)
Ciss
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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