Single N-channel MOSFET ELM26400EA-S http://www.elm-tech.com ■General description ■Features ELM26400EA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 4.5V. • • • • ■Maximum absolute ratings Vds=30V Id=6.5A Rds(on) ≤ 24mΩ (Vgs=10V) Rds(on) ≤ 34mΩ (Vgs=4.5V) Ta=25°C. Unless otherwise noted. Parameter Symbol Vds Vgs Drain-source voltage Gate-source voltage Ta=25°C Ta=100°C Limit 30 ±20 Pulsed drain current Single Pulse Avalanche Energy Idm 6.5 4.1 26 Eas Single Pulse Avalanched Current Continuous drain current Power dissipation Id Note A A 1 32 mJ 2 Ias Pd 8 1.56 A W/°C 2 Tj, Tstg -55 to 150 °C Tc=25°C Junction and storage temperature range Unit V V ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. - Max. 80 Unit °C/W ■Circuit D SOT-26(TOP VIEW) 6 1 5 2 4 3 Note Pin No. Pin name 1 2 3 GATE SOURCE GATE 4 DRAIN 5 6 SOURCE DRAIN G S Rev.1.0 4-1 Single N-channel MOSFET ELM26400EA-S ■Electrical characteristics Parameter Symbol Condition http://www.elm-tech.com Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit STATIC PARAMETERS Drain-source breakdown voltage BVdss Temperature coefficient BVdss Id=250μA, Vgs=0V ∆BVdss Reference to 25°C , Id=1mA ∆Tj Zero gate voltage drain current Idss Gate-body leakage current Igss V 0.04 V/°C Vds=30V, Vgs=0V Ta=25°C 1 Vds=24V, Vgs=0V Ta=125°C Vds=0V, Vgs=±20V 10 ±100 Gate threshold voltage Vgs(th) Temperature Coefficient Vgs(th) Vds=Vgs, Id=250μA ∆Vgs(th) Static drain-source on-resistance 3 Rds(on) 1.6 -4.0 2.5 Vgs=10V, Id=6A 19 24 25 6.5 34 Forward transconductance Gfs Vgs=4.5V, Id=4A Vds=10V, Id=4A Diode forward voltage 3 Vsd Is=1A, Vgs=0V Max. body-diode continuous current 30 1.2 1 6.5 Pulsed Source Current DYNAMIC PARAMETERS Ism 26.0 Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss Rg Gate resistance SWITCHING PARAMETERS Total gate charge 3, 4 Gate-source charge Gate-drain charge 3, 4 3, 4 Turn-on delay time 3, 4 Turn-on rise time Turn-off delay time 3, 4 Turn-off fall time 3, 4 3, 4 Body diode reverse recovery time Body diode reverse recovery charge Qg Qgs Qgd V mV/°C mΩ V A Vgs=0V, Vds=25V, f=1MHz 345 55 32 500 80 45 pF pF pF Vgs=0V, Vds=0V, f=1MHz 3.2 6.4 Ω Vgs=4.5V, Vds=15V, Id=6A 4.1 1.0 2.1 8.0 2.0 4.0 nC nC nC 2.8 7.2 15.8 5.0 14.0 30.0 ns ns ns 4.6 9.0 ns ns nC td(on) tr Vgs=10V, Vds=15V td(off) Id=1A, Rgen=6Ω tf trr Qrr nA S Is 3 μA Vgs=0V, Is=1A di/dt=100A/μs, TJ=25°C NOTE : 1. Pulsed width limited by maximum junction temperature. 2. Vdd=25V, Vgs=10V, L=1mH, Ias=8A, Rg=25Ω, Starting Tj=25°C. 3. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%. 4. Essentially independent of operating temperature. Rev.1.0 4-2 Single N-channel MOSFET ELM26400EA-S PM3312Q Normalized On Resistance (m) ID , Continuous Drain Current (A) ■Typical electrical and thermal characteristics 30V N-Channel MOSFETs TJ , Junction Temperature (℃) TC , Case Temperature (℃) Continuous Drain Current vs. TC Fig.2 TJ , Junction Temperature (℃) Fig.5 Qg , Gate Charge (nC) Normalized Vth vs. TJ Fig.4 Gate Charge Waveform ID , Continuous Drain Current (A) Normalized Thermal Response (RΘJA) Fig.3 Normalized RDSON vs. TJ VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Fig.1 http://www.elm-tech.com Square Wave Pulse Duration (s) Normalized Transient Response Fig.6 VDS , Drain to Source Voltage (V) Maximum Safe Operation Area Ver.1.00 Rev.1.0 Powermate Electronics Corp. 4-3 3 Single N-channel MOSFET ELM26400EA-S http://www.elm-tech.com PM3312Q 30V N-Channel MOSFETs VDS EAS= 90% Td(on) Tr Ton Fig.7 Td(off) BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS 1 L x IAS2 x 2 Tf Toff Switching Time Waveform VGS Fig.8 EAS Waveform Ver.1.00 Rev.1.0 Powermate Electronics Corp. 4- 44