elm26400ea

Single N-channel MOSFET
ELM26400EA-S
http://www.elm-tech.com
■General description
■Features
ELM26400EA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 4.5V.
•
•
•
•
■Maximum absolute ratings
Vds=30V
Id=6.5A
Rds(on) ≤ 24mΩ (Vgs=10V)
Rds(on) ≤ 34mΩ (Vgs=4.5V)
Ta=25°C. Unless otherwise noted.
Parameter
Symbol
Vds
Vgs
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=100°C
Limit
30
±20
Pulsed drain current
Single Pulse Avalanche Energy
Idm
6.5
4.1
26
Eas
Single Pulse Avalanched Current
Continuous drain current
Power dissipation
Id
Note
A
A
1
32
mJ
2
Ias
Pd
8
1.56
A
W/°C
2
Tj, Tstg
-55 to 150
°C
Tc=25°C
Junction and storage temperature range
Unit
V
V
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
-
Max.
80
Unit
°C/W
■Circuit
D
SOT-26(TOP VIEW)
6
1
5
2
4
3
Note
Pin No.
Pin name
1
2
3
GATE
SOURCE
GATE
4
DRAIN
5
6
SOURCE
DRAIN
G
S
Rev.1.0
4-1
Single N-channel MOSFET
ELM26400EA-S
■Electrical characteristics
Parameter
Symbol
Condition
http://www.elm-tech.com
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Temperature coefficient
BVdss Id=250μA, Vgs=0V
∆BVdss
Reference to 25°C , Id=1mA
∆Tj
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
V
0.04
V/°C
Vds=30V, Vgs=0V Ta=25°C
1
Vds=24V, Vgs=0V Ta=125°C
Vds=0V, Vgs=±20V
10
±100
Gate threshold voltage
Vgs(th) Temperature Coefficient
Vgs(th)
Vds=Vgs, Id=250μA
∆Vgs(th)
Static drain-source on-resistance 3
Rds(on)
1.6
-4.0
2.5
Vgs=10V, Id=6A
19
24
25
6.5
34
Forward transconductance
Gfs
Vgs=4.5V, Id=4A
Vds=10V, Id=4A
Diode forward voltage 3
Vsd
Is=1A, Vgs=0V
Max. body-diode continuous current
30
1.2
1
6.5
Pulsed Source Current
DYNAMIC PARAMETERS
Ism
26.0
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Rg
Gate resistance
SWITCHING PARAMETERS
Total gate charge 3, 4
Gate-source charge
Gate-drain charge 3, 4
3, 4
Turn-on delay time 3, 4
Turn-on rise time
Turn-off delay time 3, 4
Turn-off fall time 3, 4
3, 4
Body diode reverse recovery time
Body diode reverse recovery charge
Qg
Qgs
Qgd
V
mV/°C
mΩ
V
A
Vgs=0V, Vds=25V, f=1MHz
345
55
32
500
80
45
pF
pF
pF
Vgs=0V, Vds=0V, f=1MHz
3.2
6.4
Ω
Vgs=4.5V, Vds=15V, Id=6A
4.1
1.0
2.1
8.0
2.0
4.0
nC
nC
nC
2.8
7.2
15.8
5.0
14.0
30.0
ns
ns
ns
4.6
9.0
ns
ns
nC
td(on)
tr
Vgs=10V, Vds=15V
td(off) Id=1A, Rgen=6Ω
tf
trr
Qrr
nA
S
Is
3
μA
Vgs=0V, Is=1A
di/dt=100A/μs, TJ=25°C
NOTE :
1. Pulsed width limited by maximum junction temperature.
2. Vdd=25V, Vgs=10V, L=1mH, Ias=8A, Rg=25Ω, Starting Tj=25°C.
3. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
4. Essentially independent of operating temperature.
Rev.1.0
4-2
Single N-channel MOSFET
ELM26400EA-S
PM3312Q
Normalized On Resistance (m)
ID , Continuous Drain Current (A)
■Typical
electrical
and thermal characteristics
30V
N-Channel
MOSFETs
TJ , Junction Temperature (℃)
TC , Case Temperature (℃)
Continuous Drain Current vs. TC
Fig.2
TJ , Junction Temperature (℃)
Fig.5
Qg , Gate Charge (nC)
Normalized Vth vs. TJ
Fig.4
Gate Charge Waveform
ID , Continuous Drain Current (A)
Normalized Thermal Response (RΘJA)
Fig.3
Normalized RDSON vs. TJ
VGS , Gate to Source Voltage (V)
Normalized Gate Threshold Voltage (V)
Fig.1
http://www.elm-tech.com
Square Wave Pulse Duration (s)
Normalized Transient Response
Fig.6
VDS , Drain to Source Voltage (V)
Maximum Safe Operation Area
Ver.1.00
Rev.1.0
Powermate Electronics Corp.
4-3 3
Single N-channel MOSFET
ELM26400EA-S
http://www.elm-tech.com
PM3312Q
30V N-Channel MOSFETs
VDS
EAS=
90%
Td(on)
Tr
Ton
Fig.7
Td(off)
BVDSS
BVDSS-VDD
BVDSS
VDD
IAS
10%
VGS
1
L x IAS2 x
2
Tf
Toff
Switching Time Waveform
VGS
Fig.8
EAS Waveform
Ver.1.00
Rev.1.0
Powermate Electronics Corp.
4- 44
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