elm36400ea

Single N-channel MOSFET
ELM36400EA-S
■General description
■Features
ELM36400EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=7A
Rds(on) < 27mΩ (Vgs=10V)
Rds(on) < 40mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Symbol
Vgs
Gate-source voltage
Continuous drain current
Ta=25°C
Id
Ta=100°C
Pulsed drain current
Tc=25°C
Tc=100°C
Power dissipation
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
±20
V
7
A
5
Junction and storage temperature range
Idm
20
A
Pd
1.6
1.2
W
Tj, Tstg
-55 to 150
°C
3
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Steady-state
Steady-state
Symbol
Rθjc
Rθja
■Pin configuration
Typ.
Max.
30
78
Unit
°C/W
°C/W
■Circuit
D
SOT-26(TOP VIEW)
6
1
5
2
4
3
Note
Pin No.
1
Pin name
DRAIN
2
DRAIN
3
4
5
GATE
SOURCE
DRAIN
6
DRAIN
4-1
G
S
Single N-channel MOSFET
ELM36400EA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=20V, Vgs=0V, Ta=125°C
10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Max. body-diode continuous current
DYNAMIC PARAMETERS
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Turn-on rise time
Turn-off delay time
Turn-off fall time
1.0
20
1.5
μA
±100
nA
3.0
V
A
Vgs=10V, Id=7A
23
27
mΩ
Vgs=4.5V, Id=5A
32
40
mΩ
1.1
S
V
3
A
Vds=5V, Id=7A
If=1A, Vgs=0V
14.4
Is
Input capacitance
Output capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Gfs
Vsd
30
Vds=24V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
680
140
pF
pF
Crss
70
pF
Qg
Qgs
Qgd
Vgs=10V, Vds=15V, Id=7A
10.0
1.7
2.1
td(on)
tr
Vgs=10V, Vds=10V, Id=1A
td(off) Rgen=6Ω
Vgs=0V, Vds=10V, f=1MHz
tf
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%;
2. Independent of operating temperature;
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
15.0
1
1
1
1
nC
nC
nC
2
2
2
8.0
4.0
ns
ns
2
2
22.0
ns
2
5.0
ns
2
NIKO-SEM
P2703BAG
SingleLogic
N-channel
MOSFET
N-Channel
Level Enhancement
Mode
Field Effect
Transistor_Preliminary
ELM36400EA-S
TSOP-6
Lead-Free
I ,DRAIN - SOURCE CURRENT( A )
■Typical electrical and thermal characteristics
0
I S,REVERSE DRAIN CURRENT( A )
100
VGS= 0V
10
3
TA = 125°C
1
25°C
0.1
-55°C
0.01
0.001
0.0001
4-3
BODY DIODE FORWARD VOLTAGE VARIATION WITH
SOURCE CURRENT AND TEMPERATURE
0
0.8
0.2
1.0
1.2
0.4
0.6
VSD ,BODY DIODE FORWARD VOLTAGE( V )
1.4
AUG-12-2005
Single N-channel MOSFET
N-Channel Logic Level Enhancement Mode
ELM36400EA-S
Field Effect
Transistor_Preliminary
NIKO-SEM
TSOP-6
Lead-Free
TRANSIENT THERMAL RESPONSE CURVE
1
D=0.5
10
0
0.20
0.10
10
10
10
10
-1
-2
0.05
0.02
0.01
Single pulse
P(pk)
TRANSIENT THERMAL RESISTANCE
r ( t ) ,NORMALIZED EFFECTIVE
10
P2703BAG
t1
-3
t2
1.R� JC (t)=r(t)*R
2.R � JC = 156° C/W
3.T j + TC = P * R� JC (t)
t1
4.Duty Cycle,D =
t2
-4
10
-4
10
-3
10
-2
-1
10
10
t1 , TIME( ms )
0
10
1
10
4 4- 4
2
10
3
AUG-12-2005
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