Single N-channel MOSFET ELM36400EA-S ■General description ■Features ELM36400EA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 27mΩ (Vgs=10V) Rds(on) < 40mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Symbol Vgs Gate-source voltage Continuous drain current Ta=25°C Id Ta=100°C Pulsed drain current Tc=25°C Tc=100°C Power dissipation Ta=25°C. Unless otherwise noted. Limit Unit Note ±20 V 7 A 5 Junction and storage temperature range Idm 20 A Pd 1.6 1.2 W Tj, Tstg -55 to 150 °C 3 ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 30 78 Unit °C/W °C/W ■Circuit D SOT-26(TOP VIEW) 6 1 5 2 4 3 Note Pin No. 1 Pin name DRAIN 2 DRAIN 3 4 5 GATE SOURCE DRAIN 6 DRAIN 4-1 G S Single N-channel MOSFET ELM36400EA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=20V, Vgs=0V, Ta=125°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Turn-on rise time Turn-off delay time Turn-off fall time 1.0 20 1.5 μA ±100 nA 3.0 V A Vgs=10V, Id=7A 23 27 mΩ Vgs=4.5V, Id=5A 32 40 mΩ 1.1 S V 3 A Vds=5V, Id=7A If=1A, Vgs=0V 14.4 Is Input capacitance Output capacitance Gate-source charge Gate-drain charge Turn-on delay time V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Gfs Vsd 30 Vds=24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 680 140 pF pF Crss 70 pF Qg Qgs Qgd Vgs=10V, Vds=15V, Id=7A 10.0 1.7 2.1 td(on) tr Vgs=10V, Vds=10V, Id=1A td(off) Rgen=6Ω Vgs=0V, Vds=10V, f=1MHz tf NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%; 2. Independent of operating temperature; 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 15.0 1 1 1 1 nC nC nC 2 2 2 8.0 4.0 ns ns 2 2 22.0 ns 2 5.0 ns 2 NIKO-SEM P2703BAG SingleLogic N-channel MOSFET N-Channel Level Enhancement Mode Field Effect Transistor_Preliminary ELM36400EA-S TSOP-6 Lead-Free I ,DRAIN - SOURCE CURRENT( A ) ■Typical electrical and thermal characteristics 0 I S,REVERSE DRAIN CURRENT( A ) 100 VGS= 0V 10 3 TA = 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 4-3 BODY DIODE FORWARD VOLTAGE VARIATION WITH SOURCE CURRENT AND TEMPERATURE 0 0.8 0.2 1.0 1.2 0.4 0.6 VSD ,BODY DIODE FORWARD VOLTAGE( V ) 1.4 AUG-12-2005 Single N-channel MOSFET N-Channel Logic Level Enhancement Mode ELM36400EA-S Field Effect Transistor_Preliminary NIKO-SEM TSOP-6 Lead-Free TRANSIENT THERMAL RESPONSE CURVE 1 D=0.5 10 0 0.20 0.10 10 10 10 10 -1 -2 0.05 0.02 0.01 Single pulse P(pk) TRANSIENT THERMAL RESISTANCE r ( t ) ,NORMALIZED EFFECTIVE 10 P2703BAG t1 -3 t2 1.R� JC (t)=r(t)*R 2.R � JC = 156° C/W 3.T j + TC = P * R� JC (t) t1 4.Duty Cycle,D = t2 -4 10 -4 10 -3 10 -2 -1 10 10 t1 , TIME( ms ) 0 10 1 10 4 4- 4 2 10 3 AUG-12-2005