elm2h400sa

Single N-channel MOSFET
ELM2H400SA-S
■General description
■Features
ELM2H400SA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance. The package is SOT-723.
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■Application
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Notebook
Load Switch
Baterry Protection
Hand-held instruments
Vds=20V
Id=800mA
Rds(on) < 300mΩ (Vgs=4.5V)
Rds(on) < 450mΩ (Vgs=2.5V)
Rds(on) < 700mΩ (Vgs=1.8V)
Rds(on) < 1200mΩ (Vgs=1.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Continuous drain current
±8
800
Id
Ta=100°C
Pulsed drain current 1
Power dissipation
Ta=25°C. Unless otherwise noted.
Limit
Unit
20
V
mA
Idm
Pd
510
3.2
450
A
mW
Tj, Tstg
-55 to 150
°C
Tc=25°C
Junction and storage temperature range
V
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Rθja
■Pin configuration
Typ.
Max.
Unit
280
°C/W
■Circuit
SOT-723(TOP VIEW)
3
1
2
D
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
4-1
Single N-channel MOSFET
ELM2H400SA-S
■Electrical characteristics
Parameter
Symbol
Condition
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
Max. body-diode continuous current
BVdss Id=250μA, Vgs=0V
Idss
1
Vds=16V, Vgs=0V Ta=125°C
10
μA
0.7
±20
1.0
Vgs=4.5V, Id=0.5A
Vgs=2.5V, Id=0.4A
Rds(on)
Vgs=1.8V, Id=0.2A
200
300
500
300
450
700
Vgs=1.5V, Id=0.1A
800
1200
0.8
A
1.6
1
A
V
38.2
14.4
6.0
75.0
28.0
12.0
pF
pF
pF
1.00
2.00
nC
0.26
0.20
0.50
0.40
nC
nC
5.0
3.5
14.0
10.0
7.0
28.0
ns
ns
ns
6.0
12.0
ns
Is
Ism
Vsd
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge 2, 3
Ciss
Coss
Crss
Gate-source charge
Gate-drain charge 2, 3
Turn-on delay time 2, 3
Qgs
Qgd
Turn-on rise time 2, 3
Turn-off delay time 2, 3
Turn-off fall time 2, 3
V
Vds=20V, Vgs=0V Ta=25°C
Igss Vds=0V, Vgs=±8V
Vgs(th) Vds=Vgs, Id=250μA
Pulsed source current
Diode forward voltage
DYNAMIC PARAMETERS
2, 3
20
0.3
Vgs=Vds=0
Is=0.2A, Vgs=0V
Vgs=0V, Vds=10V, f=1MHz
Qg
Vgs=4.5V, Vds=10V, Id=0.5A
td(on)
tr
Vgs=4.5V, Vds=10V
td(off) Id=0.5A, Rgen=10Ω
tf
NOTE :
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%.
3. Essentially independent of operating temperature.
4-2
μA
V
mΩ
Single N-channel MOSFET
ELM2H400SA-S
PM2120EUX
Normalized On Resistance (m)
-ID , Continuous Drain Current (A)
■Typical
electrical
and thermal characteristics
20V N-Channel
MOSFETs
TJ , Junction Temperature (℃)
TC , Case Temperature (℃)
Fig.2
Continuous Drain Current vs. TC
Qg , Gate Charge (nC)
TJ , Junction Temperature ((℃)
Normalized Vth vs. TJ
Fig.4
Fig.5
Gate Charge Waveform
-ID , Continuous Drain Current (A)
Normalized Thermal Response (RΘJA)
Fig.3
Normalized RDSON vs. TJ
-VGS , Gate to Source Voltage (V)
Normalized Gate Threshold Voltage (V)
Fig.1
-V
VDS , Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
Normalized Transient Response
Fig.6
Powermate Electronics Corp.
Maximum Safe Operation Area
Ver.1.00
4-3
3
Single N-channel MOSFET
ELM2H400SA-S
PM2120EUX
20V N-Channel MOSFETs
-VDS
90%
10%
-VGS
Td(on)
Tr
Ton
Fig.7
Td(off)
Tf
Toff
Switching Time Waveform
Fig.8
Powermate Electronics Corp.
Gate Charge Waveform
Ver.1.00
4
4-4
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