Single N-channel MOSFET ELM2H400SA-S ■General description ■Features ELM2H400SA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. The package is SOT-723. • • • • • • ■Application • • • • Notebook Load Switch Baterry Protection Hand-held instruments Vds=20V Id=800mA Rds(on) < 300mΩ (Vgs=4.5V) Rds(on) < 450mΩ (Vgs=2.5V) Rds(on) < 700mΩ (Vgs=1.8V) Rds(on) < 1200mΩ (Vgs=1.5V) ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Vgs Ta=25°C Continuous drain current ±8 800 Id Ta=100°C Pulsed drain current 1 Power dissipation Ta=25°C. Unless otherwise noted. Limit Unit 20 V mA Idm Pd 510 3.2 450 A mW Tj, Tstg -55 to 150 °C Tc=25°C Junction and storage temperature range V ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. Unit 280 °C/W ■Circuit SOT-723(TOP VIEW) 3 1 2 D Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 4-1 Single N-channel MOSFET ELM2H400SA-S ■Electrical characteristics Parameter Symbol Condition Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Static drain-source on-resistance Max. body-diode continuous current BVdss Id=250μA, Vgs=0V Idss 1 Vds=16V, Vgs=0V Ta=125°C 10 μA 0.7 ±20 1.0 Vgs=4.5V, Id=0.5A Vgs=2.5V, Id=0.4A Rds(on) Vgs=1.8V, Id=0.2A 200 300 500 300 450 700 Vgs=1.5V, Id=0.1A 800 1200 0.8 A 1.6 1 A V 38.2 14.4 6.0 75.0 28.0 12.0 pF pF pF 1.00 2.00 nC 0.26 0.20 0.50 0.40 nC nC 5.0 3.5 14.0 10.0 7.0 28.0 ns ns ns 6.0 12.0 ns Is Ism Vsd Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 2, 3 Ciss Coss Crss Gate-source charge Gate-drain charge 2, 3 Turn-on delay time 2, 3 Qgs Qgd Turn-on rise time 2, 3 Turn-off delay time 2, 3 Turn-off fall time 2, 3 V Vds=20V, Vgs=0V Ta=25°C Igss Vds=0V, Vgs=±8V Vgs(th) Vds=Vgs, Id=250μA Pulsed source current Diode forward voltage DYNAMIC PARAMETERS 2, 3 20 0.3 Vgs=Vds=0 Is=0.2A, Vgs=0V Vgs=0V, Vds=10V, f=1MHz Qg Vgs=4.5V, Vds=10V, Id=0.5A td(on) tr Vgs=4.5V, Vds=10V td(off) Id=0.5A, Rgen=10Ω tf NOTE : 1. Repetitive Rating: Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%. 3. Essentially independent of operating temperature. 4-2 μA V mΩ Single N-channel MOSFET ELM2H400SA-S PM2120EUX Normalized On Resistance (m) -ID , Continuous Drain Current (A) ■Typical electrical and thermal characteristics 20V N-Channel MOSFETs TJ , Junction Temperature (℃) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Qg , Gate Charge (nC) TJ , Junction Temperature ((℃) Normalized Vth vs. TJ Fig.4 Fig.5 Gate Charge Waveform -ID , Continuous Drain Current (A) Normalized Thermal Response (RΘJA) Fig.3 Normalized RDSON vs. TJ -VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Fig.1 -V VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) Normalized Transient Response Fig.6 Powermate Electronics Corp. Maximum Safe Operation Area Ver.1.00 4-3 3 Single N-channel MOSFET ELM2H400SA-S PM2120EUX 20V N-Channel MOSFETs -VDS 90% 10% -VGS Td(on) Tr Ton Fig.7 Td(off) Tf Toff Switching Time Waveform Fig.8 Powermate Electronics Corp. Gate Charge Waveform Ver.1.00 4 4-4