elm17400fa

Single N-channel MOSFET
ELM17400FA-S
■General description
■Features
ELM17400FA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and operation
with gate voltages as low as 2.5V.
•
•
•
•
•
Vds=30V
Id=1.7A (Vgs=10V)
Rds(on) < 85mΩ (Vgs=10V)
Rds(on) < 100mΩ (Vgs=4.5V)
Rds(on) < 140mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±12
V
Symbol
Vds
Vgs
Ta=25°C
Continuous drain current
1.7
Id
Ta=70°C
Pulsed drain current
1.3
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
10
0.35
0.22
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
300
340
280
360
425
320
°C/W
°C/W
°C/W
1
2
1
3
■Circuit
D
SC-70(TOP VIEW)
3
Note
Pin No.
1
Pin name
GATE
2
3
SOURCE
DRAIN
G
S
4- 1
Single N-channel MOSFET
ELM17400FA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
100
nA
1.0
1.4
V
A
70
85
100
125
Vgs=4.5V, Id=1.5A
Vgs=2.5V, Id=1A
81
114
100
140
mΩ
mΩ
Vds=5V, Id=1.5A
Is=1A, Vgs=0V
4
0.81
1.00
S
V
0.5
A
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Vgs=10V, Id=1.5A
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Gfs
Vsd
Ciss
mΩ
390.0
pF
54.5
41.0
3
pF
pF
Ω
4.82
nC
0.62
1.58
nC
nC
td(on)
2.5
ns
tr
Vgs=10V, Vds=15V
td(off) RL=10Ω, Rgen=3Ω
2.3
22.0
ns
ns
3.0
10.0
3.6
ns
ns
nC
Coss
Crss
Rg
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
Body diode reverse recovery time
Body diode reverse recovery charge
Ta=125°C
0.6
10
Is
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Turn-on rise time
Turn-off delay time
Turn-off fall time
Ta=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Rds(on)
V
μA
Idss
Static drain-source on-resistance
30
1
5
Zero gate voltage drain current
Gate threshold voltage
On state drain current
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Vgs=0V, Vds=15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Qg
tf
trr
Qrr
Vgs=4.5V, Vds=15V, Id=1.7A
If=1.7A, dlf/dt=100A/μs
If=1.7A, dlf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4- 2
Single N-channel MOSFET
ELM17400FA-S
■Typical electrical and thermal characteristics
10
10
10V
3V
Vds=5V
8
4.5V
6
2.5V
4
2
6
Id(A)
Id (A)
8
4
125°C
2
Vgs=2V
25°C
0
0
0
1
2
3
4
5
0
0.5
200
1.5
2
2.5
3
3.5
1.6
Vgs=2.5V
150
125
Vgs=4.5V
100
75
Id=1A
Normalized On-Resistance
175
Rds(on) (m� )
1
Vgs(Volts)
Figure 2: Transfer Characteristics
Vds (Volts)
Fig 1: On-Region Characteristics
Vgs=10V
Vgs=4.5V
1.4
Vgs=10V
1.2
Vgs=2.5V
1
50
0.8
0
2
4
6
8
10
0
25
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
200
1.0E+00
1.0E-01
150
Is (A)
Rds(on) (m� )
Id=1A
125°C
125°C
1.0E-02
1.0E-03
100
25°C
25°C
1.0E-04
1.0E-05
50
0
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4- 3
1.2
Single N-channel MOSFET
ELM17400FA-S
5
500
Capacitance (pF)
4
Vgs (Volts)
600
Vds=15V
Id=1.7A
3
2
1
Ciss
400
300
200
Coss
100
0
0
1
2
3
4
5
0
6
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
10ms
1s
25
30
Tj(max)=150°C
Ta=25°C
8
6
4
10s
2
DC
0.01
1
Vds (Volts)
10
0
0.001
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=360°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
20
10
10�s
Power (W)
Id (Amps)
100�s
1ms
0.1s
10
15
12
Rds(on)
limited
0.1
10
14
10
0.1
5
Vds (Volts)
Figure 8: Capacitance Characteristics
Tj(max)=150°C
Ta=25°C
1
Crss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4- 4
100
1000
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