elm51400fa

Single N-channel MOSFET
ELM51400FA-S
■General description
■Features
ELM51400FA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Continuous drain current(Tj=150°C)
Vds=30V
Id=1.0A
Rds(on) < 430mΩ (Vgs=4.5V)
Rds(on) < 580mΩ (Vgs=2.5V)
Rds(on) < 860mΩ (Vgs=1.8V)
Ta=25°C. Unless otherwise noted.
Limit
Unit
30
V
±12
1.0
Id
Ta=70°C
Pulsed drain current
Tc=25°C
Tc=70°C
A
0.35
0.22
- 55 to 150
Pd
Junction and storage temperature range
A
0.6
6
Idm
Power dissipation
V
Tj, Tstg
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
120
■Circuit
D
SC-70(TOP VIEW)
3
1
2
Unit
°C/W
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
6- 1
Single N-channel MOSFET
ELM51400FA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
0.5
1.8
1
5
μA
±100
nA
1.0
V
A
Vgs=4.5V, Id=1.5A
380
430
Rds(on) Vgs=2.5V, Id=1.2A
Vgs=1.8V, Id=0.6A
Gfs Vds=10V, Id=1.0A
500
760
1
580
860
0.65
1.20
V
1.0
A
Vsd
Is=1.0A, Vgs=0V
Is
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
Turn-off delay time
Turn-off fall time
V
Ta=85°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Input capacitance
Output capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
30
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Vgs=0V, Vds=15V, f=1MHz
Vgs=4.5V, Vds=15V
Id=1.2A
Vgs=4.5V, Vds=15V
RL=20Ω, Id=1.2A
Rgen=1Ω
6- 2
mΩ
S
85
25
pF
pF
15
pF
1.4
1.8
nC
0.3
0.6
15
25
nC
nC
ns
25
15
45
25
ns
ns
10
20
ns
AFN1306
Alfa-MOS
30V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM51400FA-S
Typical
Characteristics
■Typical
electrical and thermal characteristics
©Alfa-MOS Technology Corp.
Rev.A July 2011
www.alfa-mos.com
Page 3
6- 3
AFN1306
Alfa-MOS
30V N-Channel
Enhancement Mode MOSFET
Single N-channel MOSFET
Technology
ELM51400FA-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A July 2011
www.alfa-mos.com
Page 4
6- 4
AFN1306
Alfa-MOS
30V N-Channel
Enhancement Mode MOSFET
Single N-channel MOSFET
Technology
ELM51400FA-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A July 2011
www.alfa-mos.com
Page 5
6- 5
AFN1306
Alfa-MOS
30V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM51400FA-S
Typical
Characteristics
■Test
circuit and waveform
©Alfa-MOS Technology Corp.
Rev.A July 2011
www.alfa-mos.com
Page 6
6- 6
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