Single N-channel MOSFET ELM51402FA-S ■General description ■Features ELM51402FA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Vgs Ta=25°C Continuous drain current(Tj=150°C) Vds=20V Id=1.0A Rds(on) < 280mΩ (Vgs=4.5V) Rds(on) < 340mΩ (Vgs=2.5V) Rds(on) < 680mΩ (Vgs=1.8V) Ta=25°C. Unless otherwise noted. Limit Unit 20 V ±12 1.0 Id Ta=70°C Pulsed drain current Tc=25°C Tc=70°C A 0.35 0.22 - 55 to 150 Pd Junction and storage temperature range A 0.6 6 Idm Power dissipation V Tj, Tstg W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 120 ■Circuit D SC-70(TOP VIEW) 3 1 2 Unit °C/W Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 5- 1 Single N-channel MOSFET ELM51402FA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=20V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS 0.4 1.0 1 5 μA ±100 nA 1.0 V A Vgs=4.5V, Id=1.8A 240 280 Rds(on) Vgs=2.5V, Id=1.5A Vgs=1.8V, Id=1.2A Gfs Vds=10V, Id=1.0A 300 600 1 340 680 0.65 1.20 V 1.0 A Vsd Is=1.0A, Vgs=0V Is Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss Turn-off delay time Turn-off fall time V Ta=85°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Input capacitance Output capacitance Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time 20 Qg Qgs Qgd td(on) tr td(off) tf Vgs=0V, Vds=10V, f=1MHz Vgs=4.5V, Vds=10V Id=1.2A Vgs=4.5V, Vds=10V RL=20Ω, Id=1.2A Rgen=1Ω 5- 2 mΩ S 70 20 pF pF 8 pF 1.06 1.38 nC 0.18 0.32 18 26 nC nC ns 20 70 28 110 ns ns 25 40 ns AFN1304 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM51402FA-S Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev.A Oct. 2010 www.alfa-mos.com Page 3 5- 3 AFN1304 Alfa-MOS 20V N-Channel Enhancement Mode MOSFET Single N-channel MOSFET Technology ELM51402FA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Oct. 2010 www.alfa-mos.com Page 4 5- 4 AFN1304 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM51402FA-S Typical Characteristics ■Test circuit and waveform ©Alfa-MOS Technology Corp. Rev.A Oct. 2010 www.alfa-mos.com Page 5 5- 5