elm51404fa

Single N-channel MOSFET
ELM51404FA-S
■General description
■Features
ELM51404FA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
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•
•
•
•
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Continuous drain current(Tj=150°C)
Vds=30V
Id=3.6A
Rds(on) = 82mΩ (Vgs=10V)
Rds(on) = 90mΩ (Vgs=4.5V)
Rds(on) = 102mΩ (Vgs=2.5V)
Ta=25°C. Unless otherwise noted.
Limit
Unit
30
V
±12
3.6
Id
Ta=70°C
Pulsed drain current
Tc=25°C
Tc=70°C
A
0.35
0.22
- 55 to 150
Pd
Junction and storage temperature range
A
2.6
10
Idm
Power dissipation
V
Tj, Tstg
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
120
■Circuit
D
SC-70(TOP VIEW)
3
1
2
Unit
°C/W
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
5- 1
Single N-channel MOSFET
ELM51404FA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Ta=25°C. Unless otherwise noted.
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
V
1
Ta=85°C
30
0.3
30
μA
±100
nA
1.2
V
A
82
Rds(on) Vgs=4.5V, Id=3.0A
82
90
93
20
102
0.8
1.2
V
1.6
A
Diode forward voltage
Vsd
Is=1.7A, Vgs=0V
Is
Ciss
Coss
Crss
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-off fall time
Unit
77
Gfs
Turn-on rise time
Turn-off delay time
Max.
Vgs=10V, Id=3.6A
Forward transconductance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Typ.
30
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Vgs=2.5V, Id=2.2A
Vds=10V, Id=6.1A
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Min.
Vgs=0V, Vds=15V, f=1MHz
Vgs=4.5V, Vds=15V
Id=3.6A
Vgs=10V, Vds=15V
tr
RL=15Ω, Id=1.0A
td(off)
Rgen=6Ω
tf
5- 2
mΩ
S
280
pF
40
20
pF
pF
2.3
1.0
3.0
nC
nC
0.6
10
15
nC
ns
12
20
ns
15
25
ns
10
15
ns
AFN7400
Alfa-MOS
30V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM51404FA-S
■Typical
electrical and thermal characteristics
Typical
Characteristics
©Alfa-MOS Technology Corp.
Rev.A Dec. 2011
www.alfa-mos.com
Page 3
5- 3
AFN7400
Alfa-MOS
30V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM51404FA-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Dec. 2011
www.alfa-mos.com
Page 4
5- 4
AFN7400
Alfa-MOS
30V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM51404FA-S
Typical
Characteristics
■Test
circuit and waveform
©Alfa-MOS Technology Corp.
Rev.A Dec. 2011
www.alfa-mos.com
Page 5
5- 5
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