Single N-channel MOSFET ELM51404FA-S ■General description ■Features ELM51404FA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Vgs Ta=25°C Continuous drain current(Tj=150°C) Vds=30V Id=3.6A Rds(on) = 82mΩ (Vgs=10V) Rds(on) = 90mΩ (Vgs=4.5V) Rds(on) = 102mΩ (Vgs=2.5V) Ta=25°C. Unless otherwise noted. Limit Unit 30 V ±12 3.6 Id Ta=70°C Pulsed drain current Tc=25°C Tc=70°C A 0.35 0.22 - 55 to 150 Pd Junction and storage temperature range A 2.6 10 Idm Power dissipation V Tj, Tstg W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 120 ■Circuit D SC-70(TOP VIEW) 3 1 2 Unit °C/W Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 5- 1 Single N-channel MOSFET ELM51404FA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Ta=25°C. Unless otherwise noted. Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Static drain-source on-resistance V 1 Ta=85°C 30 0.3 30 μA ±100 nA 1.2 V A 82 Rds(on) Vgs=4.5V, Id=3.0A 82 90 93 20 102 0.8 1.2 V 1.6 A Diode forward voltage Vsd Is=1.7A, Vgs=0V Is Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-off fall time Unit 77 Gfs Turn-on rise time Turn-off delay time Max. Vgs=10V, Id=3.6A Forward transconductance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Typ. 30 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Vgs=2.5V, Id=2.2A Vds=10V, Id=6.1A Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Min. Vgs=0V, Vds=15V, f=1MHz Vgs=4.5V, Vds=15V Id=3.6A Vgs=10V, Vds=15V tr RL=15Ω, Id=1.0A td(off) Rgen=6Ω tf 5- 2 mΩ S 280 pF 40 20 pF pF 2.3 1.0 3.0 nC nC 0.6 10 15 nC ns 12 20 ns 15 25 ns 10 15 ns AFN7400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM51404FA-S ■Typical electrical and thermal characteristics Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Dec. 2011 www.alfa-mos.com Page 3 5- 3 AFN7400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM51404FA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Dec. 2011 www.alfa-mos.com Page 4 5- 4 AFN7400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM51404FA-S Typical Characteristics ■Test circuit and waveform ©Alfa-MOS Technology Corp. Rev.A Dec. 2011 www.alfa-mos.com Page 5 5- 5