elm17412ga

Single N-channel MOSFET
ELM17412GA-S
■General description
■Features
ELM17412GA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and operation
with gate voltages as low as 2.5V.
•
•
•
•
•
Vds=30V
Id=2.1A (Vgs=10V)
Rds(on) < 90mΩ (Vgs=10V)
Rds(on) < 100mΩ (Vgs=4.5V)
Rds(on) < 160mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
30
V
Gate-source voltage
Vgs
±12
2.1
V
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
1.7
10
0.625
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
0.400
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Symbol
Typ.
Max.
Unit
Note
Maximum junction-to-ambient
Maximum junction-to-ambient
t≤10s
Steady-state
Rθja
175
200
200
250
°C/W
°C/W
1
Maximum junction-to-lead
Steady-state
Rθjl
130
160
°C/W
3
■Pin configuration
■Circuit
D
SC-70-6(TOP VIEW)
6
1
5
2
4
3
Pin No.
Pin name
1
2
3
DRAIN
DRAIN
GATE
4
5
6
SOURCE
DRAIN
DRAIN
4- 1
G
S
Single N-channel MOSFET
ELM17412GA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
100
nA
1.5
1.8
V
A
69
90
108
130
Vgs=4.5V, Id=1.3A
Vgs=2.5V, Id=1A
78
130
100
160
mΩ
mΩ
Vds=5V, Id=2.1A
Is=1A, Vgs=0V
8.5
0.8
1.0
S
V
2.5
A
270
pF
39
29
1.4
1.7
pF
pF
Ω
3.0
3.6
nC
Vds=16V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Vgs=10V, Id=2.1A
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Gfs
Vsd
Ciss
Coss
Crss
Rg
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
Body diode reverse recovery time
Body diode reverse recovery charge
Ta=125°C
1.0
10
Is
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Turn-on rise time
Turn-off delay time
Turn-off fall time
Ta=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Rds(on)
V
μA
Idss
Static drain-source on-resistance
30
1
5
Zero gate voltage drain current
Gate threshold voltage
On state drain current
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
226
Vgs=0V, Vds=15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Qg
Vgs=4.5V, Vds=15V, Id=2.1A
0.4
1.2
mΩ
nC
nC
td(on)
2.8
4.0
ns
tr
Vgs=5V, Vds=15V
td(off) RL=7.1Ω, Rgen=6Ω
2.1
17.4
3.0
21.0
ns
ns
2.1
9.1
3.4
3.0
11.0
4.0
ns
ns
nC
tf
trr
Qrr
If=2.1A, dIf/dt=100A/μs
If=2.1A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
ELM17412GA-S
■Typical electrical and thermal characteristics
10
15
10V
3.5V
4V
6V
8
3V
6
9
Id(A)
Id (A)
12
6
4
Vgs=2.5V
125°C
25°C
2
3
0
0
0
1
2
3
4
Vds (Volts)
Fig 1: On-Region Characteristics
5
0
0.5
1
1.5
2
2.5
3
Vgs(Volts)
Figure 2: Transfer Characteristics
3.5
160
Rds(on) (m� )
Normalized On-Resistance
1.8
140
Vgs=2.5V
120
Vgs=4.5V
100
80
Vgs=10V
60
0
1
2
3
4
5
Vgs=4.5V
1.6
1.4
Vgs=10V
Id=2.1A
1.2
Vgs=2.5V
Id=1A
1
0.8
6
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
180
160
1.0E+00
Id=2.1A
140
1.0E-01
125°C
Is (A)
Rds(on) (m� )
Id=1.3A
120
125°C
1.0E-02
100
25°C
1.0E-03
25°C
80
1.0E-04
60
1
2
3
4
5
6
7
8
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body-Diode Characteristics
4- 3
1.2
Single N-channel MOSFET
ELM17412GA-S
400
5
300
Capacitance (pF)
Vgs (Volts)
350
=10V
Vds=15V
ID=2.2A
Id=2.1A
4
3
2
Ciss
250
200
150
100
1
50
0
0
0.5
1
1.5
2
2.5
3
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
3.5
0
100.0
Power (W)
Id (Amps)
1ms
Rds(on)
limited
10ms
100m
1.0
10s
12
8
4
1s
DC
1
10
0
0.1
100
Vds (Volts)
Z�ja Normalized Transient
Thermal Resistance
1
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=250°C/W
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
15
Tj(max)=150°C
Ta=25°C
16
10.0
0.1
10
Vds (Volts)
Figure 8: Capacitance Characteristics
20
Tj(max)=150°C
Ta=25°C
0.1
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
Pd
0.01
0.001
0.00001
T
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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