Single N-channel MOSFET ELM3C1260A ■General description ■Features ELM3C1260A uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • Vds=600V • Id=12A • Rds(on) < 0.65Ω (Vgs=10V) ■Maximum absolute ratings Parameter Symbol Drain-source voltage Gate-source voltage Continuous drain current Vds Vgs Ta=25°C Ta=100°C Pulsed drain current Avalanche current Avalanche energy L=10mH Tc=100°C Junction and storage temperature range 600 ±30 V V Idm 12.0 8.5 48 Ias 7.4 A 5 Eas 277 mJ 5 Id Tc=25°C Power dissipation Ta=25°C. Unless otherwise noted. Limit Unit Note 50 Pd 4 A 3, 4 W 20 -55 to 150 Tj, Tstg A °C ■Thermal characteristics Parameter Maximum junction-to-case Symbol Rθjc Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. 2.5 Unit °C/W 62.5 °C/W ■Circuit D TO-220F(TOP VIEW) 1 2 3 Note Pin No. Pin name 1 2 3 GATE DRAIN SOURCE 6- 1 G S Single N-channel MOSFET ELM3C1260A ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage Static drain-source on-resistance Condition Vds=600V, Vgs=0V, Ta=100°C 250 Vds=0V, Vgs=±30V ±100 nA 4.5 0.475 0.650 V Ω 1 S 1 1.4 V 1 12 A 3 Vgs(th) Vds=Vgs, Id=250μA Rds(on) Vgs=10V, Id=6A Vds=40V, Id=6A Diode forward voltage Vsd If=8A, Vgs=0V Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time V 25 Gfs Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 600 Vds=600V, Vgs=0V, Ta=25°C Forward transconductance Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 2.5 16 Is Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Vgs=0V, Vds=25V, f=1MHz Vgs=10V, Vds=300V, Id=6A Vds=300V, Id=6A, Rgen=25Ω If=12A, dIf/dt=100A/μs Vgs=0V NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Limited only by maximum temperature allowed. 5. Vdd=60V, starting Tj=25°C. 6- 2 μA 2290 pF 281 46 pF pF 46.5 10.0 nC nC 2 2 16.1 35 120 nC ns ns 2 2 2 115 90 ns ns 2 2 420 ns 4.7 μC Single N-channel MOSFET ELM3C1260A ■Typical electrical and thermal characteristics 6- 3 Single N-channel MOSFET ELM3C1260A � � � � � � � � � 6- 4 Single N-channel MOSFET ELM3C1260A 6 -5 Single N-channel MOSFET ELM3C1260A 6- 6