Single N-channel MOSFET ELM3C1350A ■General description ■Features ELM3C1350A uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • Vds=500V • Id=13A • Rds(on) < 0.52Ω (Vgs=10V) ■Maximum absolute ratings Parameter Symbol Drain-source voltage Gate-source voltage Continuous drain current Vds Vgs Ta=25°C Ta=100°C Pulsed drain current Avalanche current Avalanche energy L=10mH Tc=100°C Junction and storage temperature range 500 ±30 V V Idm 13 10 45 Ias 8.8 A 5 Eas 387 mJ 5 Id Tc=25°C Power dissipation Ta=25°C. Unless otherwise noted. Limit Unit Note 34 Pd 4 A 3, 4 W 13 -55 to 150 Tj, Tstg A °C ■Thermal characteristics Parameter Maximum junction-to-case Symbol Rθjc Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. 3.6 Unit °C/W 62.5 °C/W ■Circuit D TO-220F(TOP VIEW) 1 2 3 Note Pin No. Pin name 1 2 3 GATE DRAIN SOURCE 4- 1 G S Single N-channel MOSFET ELM3C1350A ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage Static drain-source on-resistance Condition Vds=500V, Vgs=0V, Ta=100°C 250 Vds=0V, Vgs=±30V ±100 nA 4.5 0.40 0.52 V Ω 1 8.5 S 1 1.7 V 1 13 45 A A 3 3 Gfs Vds=40V, Id=6A Diode forward voltage Vsd If=4A, Vgs=0V Max. body-diode continuous current Pulsed current DYNAMIC PARAMETERS Is Ism Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Ciss Coss Crss Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Qgs Vgs=10V, Vds=250V, Id=6A Qgd td(on) Vgs=0V, Vds=25V, f=1MHz Qg tr Vds=250V, Id=6A, Rgen=4.7Ω td(off) tf Body diode reverse recovery time trr Body diode reverse recovery charge Qrr V 25 Vgs(th) Vds=Vgs, Id=250μA Rds(on) Vgs=10V, Id=6.5A Turn-off fall time 500 Vds=500V, Vgs=0V, Ta=25°C Forward transconductance Turn-off delay time Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note If=12A, dIf/dt=100A/μs Vgs=0V NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Limited only by maximum temperature allowed. 5. Vdd=60V, starting Tj=25°C. 4- 2 2.5 μA 2185 204 59 pF pF pF 40.0 nC 2 11.5 12.5 30 nC nC ns 2 2 2 25 43 ns ns 2 2 15 ns 2 320.0 ns 4.9 μC Single N-channel MOSFET ELM3C1350A 4- 3 Single N-channel MOSFET ELM3C1350A 4- 4