elm32402la

Single N-channel MOSFET
ELM32402LA-S
■General description
■Features
ELM32402LA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=20V
Id=20A
Rds(on) < 50mΩ (Vgs=5V)
Rds(on) < 85mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Gate-source voltage
Vgs
Continuous drain current
Ta=25°C
±16
20
Id
Ta=100°C
Pulsed drain current
Tc=25°C
Pd
Tc=100°C
Junction and storage temperature range
Tj, Tstg
A
13
40
26
Idm
Power dissipation
V
A
3
W
11
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Steady-state
Symbol
Rθjc
Maximum junction-to-ambient
Steady-state
Rθja
■Pin configuration
Typ.
Max.
4.8
Unit
°C/W
110.0
°C/W
Note
■Circuit
D
TO-252-3(TOP VIEW)
TAB
2
1
Pin No.
Pin name
1
2
3
GATE
DRAIN
SOURCE
3
4-1
G
S
Single N-channel MOSFET
ELM32402LA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=13.2V, Vgs=0V, Ta=125°C
10
Vds=0V, Vgs=±16V
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=10V
Max. body-diode continuous current
20
Vds=16V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
0.45
20
0.75
μA
±100
nA
1.00
V
A
Vgs=5V, Id=6A
37
50
mΩ
Vgs=2.5V, Id=5A
55
85
mΩ
Vds=10V, Id=6A
If=Is, Vgs=0V
13
1.3
S
V
Is
20
A
Ism
40
A
Gfs
Vsd
1
1
1
1
3
Ciss
195
pF
Coss Vgs=0V, Vds=15V, f=1MHz
Crss
125
50
pF
pF
Gate-source charge
Qg
Qgs
7.5
0.9
nC
nC
2
2
Gate-drain charge
Turn-on delay time
Qgd
td(on)
4.0
4.5
nC
ns
2
2
Turn-on rise time
Turn-off delay time
tr
49.5
ns
2
12.0
ns
2
6.0
ns
2
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Turn-off fall time
Vgs=5V, Vds=10V, Id=10A
Vgs=5V, Vds=10V, Id=1A
td(off) RL=1Ω,Rgen=3.3Ω
tf
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
Single N-channel MOSFET
P5002CDG
N-Channel Logic Level Enhancement Mode Field
ELM32402LA-S
Effect Transistor
■Typical electrical and thermal characteristics
TO-252
Lead-Free
100
VGS= 0V
10
Is - Reverse Drain Current(A)
NIKO-SEM
25° C
0.1
-55° C
0.01
0.001
0.0001
4-3
T = 125° C
1
0
0.6
0.2
0.4
0.8
VSD - Body Diode Forward Voltage(V)
1.0
1.2
NIKO-SEM
Single
N-channel
MOSFET
N-Channel
Logic Level
Enhancement
Mode Field
Effect
Transistor
ELM32402LA-S
4-4
P5002CDG
TO-252
Lead-Free
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