elm32404la

Single N-channel MOSFET
ELM32404LA-S
■General description
■Features
ELM32404LA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=12A
Rds(on) < 25mΩ (Vgs=10V)
Rds(on) < 37mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
30
±20
12
10
30
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
V
V
A
A
32
3
W
22
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Steady-state
Steady-state
Symbol
Rθjc
Rθja
■Pin configuration
Typ.
Max.
3
75
Unit
°C/W
°C/W
Note
■Circuit
D
TO-252-3(TOP VIEW)
TAB
2
1
Pin No.
1
Pin name
GATE
2
3
DRAIN
SOURCE
3
4-1
G
S
Single N-channel MOSFET
ELM32404LA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=20V, Vgs=0V, Ta=55°C
10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
1.0
30
1.5
μA
±250
nA
2.5
V
A
Vgs=10V, Id=12A
18
25
mΩ
Vgs=4.5V, Id=6A
25
37
mΩ
Vds=5V, Id=12A
If=1A, Vgs=0V
19
1
S
V
Is
1.3
A
Ism
2.6
A
Gfs
Vsd
Ciss
Coss
Crss
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Max. body-diode continuous current
30
Vds=24V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
Vgs=0V, Vds=10V, f=1MHz
Vgs=10V, Vds=15V, Id=12A
Vgs=10V, Vds=10V, Id=1A
td(off) Rgen=6Ω
tf
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
1
1
1
1
3
790
pF
175
65
pF
pF
16.0
2.5
nC
nC
2
2
2.1
2.2
4.4
nC
ns
2
2
7.5
15.0
ns
2
11.8
21.3
ns
2
3.7
7.4
ns
2
NIKO-SEM
P2503BDG
N-Channel Logic Level Enhancement
ModeN-channel
Field EffectMOSFET
Transistor
Single
TO-252
Lead-Free
ELM32404LA-S
■Typical
electrical
and thermalCHARACTERISTICS
characteristics
TYPICAL
PERFORMANCE
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
T A = 125° C
Is - Reverse Drain Current(A)
10
-55° C
0.1
0.01
0.001
4-3
25° C
1
0
0.4
0.2
0.6
0.8
1.0
VSD - Body Diode Forward Voltage(V)
1.2
1.4
NIKO-SEM
Single N-channel MOSFET
N-Channel Logic Level Enhancement
ELM32404LA-S
Mode
Field Effect Transistor
4-4
P2503BDG
TO-252
Lead-Free
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