Single N-channel MOSFET ELM32412LA-S ■General description ■Features ELM32412LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=40V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 45mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds 40 V Gate-source voltage Vgs ±20 12 V Continuous drain current Ta=25°C Id Ta=100°C Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=100°C Junction and storage temperature range Tj, Tstg A 10 45 A 41 3 W 32 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 3 75 Unit °C/W °C/W Note ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. 1 Pin name GATE 2 3 DRAIN SOURCE 3 4-1 G S Single N-channel MOSFET ELM32412LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=30V, Vgs=0V, Ta=125°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=10V Max. body-diode continuous current 40 Vds=32V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 1 45 2 μA ±250 nA 3 V A Vgs=10V, Id=12A 21 25 mΩ Vgs=4.5V, Id=10A 35 45 mΩ Vds=10V, Id=12A If=Is, Vgs=0V 18 1.2 S V Is 12 A Ism 40 A Gfs Vsd Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=0V, Vds=10V, f=1MHz Vgs=10V, Vds=20V, Id=12A Vgs=10V, Vds=20V, Id=1A td(off) RL=1Ω, Rgen=6Ω Turn-off fall time Body diode reverse recovery time tf trr Body diode reverse recovery charge Qrr If=5A, dIf/dt=100A/μs NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 1 1 1 1 3 760 pF 165 55 pF pF 16.0 2.5 nC nC 2 2 2.1 2.1 4.2 nC ns 2 2 7.2 14.0 ns 2 11.6 21.0 ns 2 3.5 14.5 7.2 ns ns 2 7.2 nC NIKO-SEM Single N-channel MOSFET N-Channel Logic Level Enhancement P2504BDG ELM32412LA-S Mode Field Effect Transistor ( Preliminary ) ■Typical electrical and thermal characteristics TO-252 (DPAK) Lead-Free Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125°C Is - Reverse Drain Current(A) 10 25°C 1 -55°C 0.1 0.01 0.001 0 0.2 0.6 0.8 1.0 0.4 VSD - Body Diode Forward Voltage(V) 1.2 1.4 4-3 JAN-17-2005 NIKO-SEM Single N-channel MOSFET N-Channel Logic Level Enhancement P2504BDG ELM32412LA-S Mode Field Effect Transistor ( Preliminary ) TO-252 (DPAK) Lead-Free 4-4 JAN-17-2005