elm32414la

Single N-channel MOSFET
ELM32414LA-S
■General description
■Features
ELM32414LA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=25V
Id=35A
Rds(on) < 20mΩ (Vgs=10V)
Rds(on) < 31mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Gate-source voltage
Vgs
Continuous drain current
Ta=25°C
Ta=100°C
Repetitive avalanche energy
V
Idm
120
A
Iar
15
A
Eas
Ear
15.0
5.6
mJ
mJ
Id
Pulsed drain current
Avalanche current
Avalanche energy
±20
35
25
L=0.133mH
L=0.05mH
Tc=25°C
Tc=100°C
Junction and storage temperature range
Power dissipation
Pd
Tj, Tstg
A
50
35
-55 to 150
3
4
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Maximum case-to-heatsink
Steady-state
Steady-state
Symbol
Rθjc
Rθja
Rθcs
■Pin configuration
Typ.
Max.
2.5
Unit
°C/W
75.0
°C/W
°C/W
0.7
Note
■Circuit
D
TO-252-3(TOP VIEW)
TAB
2
1
Pin No.
Pin name
1
2
GATE
DRAIN
3
SOURCE
3
4- 1
G
S
Single N-channel MOSFET
ELM32414LA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=20V, Vgs=0V, Ta=125°C
250
Vds=0V, Vgs=±20V
±250
nA
2.5
V
A
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
V
25
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=10V
Max. body-diode continuous current
25
Vds=20V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
1.0
35
1.5
μA
1
Vgs=10V, Id=15A
15.5
20.0
mΩ
Vgs=4.5V, Id=15A
23.0
31.0
mΩ
1.4
S
V
Is
35
A
Ism
120
A
530
700
pF
200
60
275
90
pF
pF
8.4
2.5
11.0
3.1
nC
nC
2
2
6.4
6.2
9.6
9.3
nC
ns
2
2
11.0
17.0
ns
2
23.0
34.0
ns
2
2
Gfs
Vsd
Vds=15V, Id=30A
If=Is, Vgs=0V
Ciss
Coss
Crss
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Vgs=0V, Vds=25V, f=1MHz
Vgs=10V, Vds=12.5V
Id=15A
Vgs=10V, Vds=15V, Id=15A
td(off) Rgen=12.7Ω
14
28
1.1
Turn-off fall time
Body diode reverse recovery time
tf
trr
18.0
15
27.0
18
ns
ns
Body diode reverse recovery charge
Qrr
2
3
nC
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4- 2
1
1
1
3
P2003BDG
Single N-channel
N-Channel
Logic LevelMOSFET
Enhancement
ModeELM32414LA-S
Field Effect Transistor
NIKO-SEM
TO-252 (DPAK)
Lead-Free
■Typical electrical and thermal characteristics
10.0V
50
7.0V
45
3.0
5.0V
6.0V
R DS(ON) ,NORMALIZED
55
4.5V
40
35
30
25
4.0V
20
15
DRAIN - SOURCE ON - RESISTANCE
ID ,DRAIN - SOURCE CURRENT( A )
ON- RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGE
ON-REGION CHARACTERISTIC
60
3.5V
10
VGS =3.0V
5
0
0.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS,DRAIN- SOURCE VOLTAGE ( V )
4.5
0.8
25
50
75 100 125
0
Tj ,JUNCTION TEMPERATURE( °C )
50
150
0
10
20
30
40
I D ,DRAIN CURRENT( A )
50
60
0.05
0.04
0.03
TA = 125°C
0.02
TA = -55°C
25°C
125°C
20
10
3
4
2
VGS,GATE TO SOURCE VOLTAGE
TA = 25°C
2
60
30
1
10V
0.5
0.01
175
40
0
1.0
TRANSFER CHARACTERISTICS
VDS =10V
I D,DRAIN CURRENT( A )
R DS(ON) ,ON-RESISTANCE(OHM)
1.0
I S,REVERSE DRAIN CURRENT( A )
DS(ON)
R
,NORMALIZED
DRAIN - SOURCE ON - RESISTANCE
1.2
60
6.0V
7.0V
ID = 15A
1.4
-25
5.0V
ON-RESISTANCE VARIATION WITH GATE-TO-SOURCE VOLTAGE
I D = 15A
0.6
-50
4.5V
1.5
0.06
VGS= 10V
1.6
2.0
0
5.0
ON- RESISTANCE VARIATION WITH TEMPERATURE
1.8
VGS = 4.0V
2.5
BODY DIODE FORWARD VOLTAGE VARIATION WITH
SOURCE CURRENT AND TEMPERATURE
10
TA = 125°C
1
25°C
0.1
-55°C
0.01
0.001
3
4- 3
10
VGS= 0V
0.0001
5
6
8
4
VGS,GATE TO SOURCE VOLTAGE
0
0.8
1.0
1.2
0.2
0.4
0.6
VSD ,BODY DIODE FORWARD VOLTAGE( V )
1.4
DEC-28-2004
Single N-channel MOSFET
NIKO-SEM
GATE CHARGE CHARACTERISTICS
10
I D = 15A
V GS ,GATE - SOURCE VOLTAGE ( V )
P2003BDG
N-Channel Logic Level Enhancement
ELM32414LA-S
Mode
Field Effect Transistor
TO-252 (DPAK)
Lead-Free
CAPACITANCE CHARACTERISTICS
10000
15V
CAPACITANCE( pF )
8
VDS = 5V
10V
6
4
1000
Ciss
Coss
100
Crss
2
0
0
4
10
16
8
12
Qg ,GATE CHARGE ( nC )
10
15
25
20
30
VDS ,DRAIN TO SOURCE VOLTAGE ( V )
SINGLEPULSE MAXIMUMPOWERDISSIPATION
2400
f = 1MHZ
VGS= 0V
1
5
MAXIMUM SAFE OPERATING AREA
3
10
SINGLE PULSE
R� = 2 .5°C/W
TC = 25°C
JC
I D,DRAIN CURRENT( A )
POWER( W )
2000
1600
1200
800
10
VGS= 10V
SINGLE PULSE
R� JC= 2.5 °C/W
Tc = 25 °C
10 -1
10
1000
10m
s
0
1
10
10
VDS,DRAIN - SOURCE VOLTAGE
2
10
D=0.5
0
-1
0.20
0.10
0.05
-2
0.02
0.01
P(pk)
TRANSIENT THERMAL RESISTANCE
r ( t ) ,NORMALIZED EFFECTIVE
10
DC
1
10
TRANSIENT THERMAL RESPONSE CURVE
1
10
10
100
10
0µ
S
1m
s
0
10
0.1
1
SINGLE PULSE TIME( SEC)
imit
)L
n
R ds(o
400
0
0.01
35.0µS
2
10
10
t1
-3
t2
1.R� JC (t)=r(t)*R
2.R � JC = 2.5° C/W
3.T j + TC = P * R � JC (t)
t1
4.Duty Cycle,D =
t2
Single pulse
10
-4
10
-7
10
-6
10
-5
-4
10
10
t1 , TIME( ms )
-3
10
-2
10
4
4- 4
-1
10
0
DEC-28-2004
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