Single N-channel MOSFET ELM32418LA-S ■General description ■Features ELM32418LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=40V Id=20A Rds(on) < 15mΩ (Vgs=10V) Rds(on) < 27mΩ (Vgs=7V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds 40 V Gate-source voltage Vgs ±20 20 V Continuous drain current Ta=25°C Id Ta=100°C Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=100°C Junction and storage temperature range Tj, Tstg A 16 50 A 42 3 W 32 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 3 75 Unit °C/W °C/W Note ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. Pin name 1 GATE 2 3 DRAIN SOURCE 3 4-1 G S Single N-channel MOSFET ELM32418LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=30V, Vgs=0V, Ta=125°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=10V Max. body-diode continuous current 40 Vds=32V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 1.2 50 2.0 μA ±250 nA 3.0 V A Vgs=10V, Id=20A 12.5 15.0 mΩ Vgs=7V, Id=10A 18.0 27.0 mΩ Vds=10V, Id=20A If=Is, Vgs=0V 25 1.3 S V Is 20 A Ism 50 A Gfs Vsd Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=0V, Vds=10V, f=1MHz Vgs=10V, Vds=20V, Id=10A Vgs=10V, Vds=20V, Id=1A td(off) RL=1Ω, Rgen=6Ω 1 1 3 pF 23.0 3.6 nC nC 2 2 3.0 3.2 6.4 nC ns 2 2 10.8 21.7 ns 2 17.1 30.8 ns 2 10.7 ns ns 2 tf trr If=20A, dIf/dt=100A/μs 5.3 60 Body diode reverse recovery charge Qrr If=20A, dIf/dt=100A/μs 43 4-2 1 1145 1450 255 355 95 145 Turn-off fall time Body diode reverse recovery time NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 1 pF pF nC NIKO-SEM N-Channel Logic LevelMOSFET Enhancement Single N-channel Mode Field Effect Transistor ELM32418LA-S P1504BDG TO-252 (DPAK) Lead-Free ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS= 0V T A = 125°C Is - Reverse Drain Current(A) 10 25°C 1 -55°C 0.1 0.01 0.001 3 4-3 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 May-05-2006 NIKO-SEM Single N-channel MOSFET N-Channel Logic Level Enhancement ELM32418LA-S Mode Field Effect Transistor 4 4-4 P1504BDG TO-252 (DPAK) Lead-Free May-05-2006