elm32418la

Single N-channel MOSFET
ELM32418LA-S
■General description
■Features
ELM32418LA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=40V
Id=20A
Rds(on) < 15mΩ (Vgs=10V)
Rds(on) < 27mΩ (Vgs=7V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
40
V
Gate-source voltage
Vgs
±20
20
V
Continuous drain current
Ta=25°C
Id
Ta=100°C
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=100°C
Junction and storage temperature range
Tj, Tstg
A
16
50
A
42
3
W
32
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Steady-state
Steady-state
Symbol
Rθjc
Rθja
■Pin configuration
Typ.
Max.
3
75
Unit
°C/W
°C/W
Note
■Circuit
D
TO-252-3(TOP VIEW)
TAB
2
1
Pin No.
Pin name
1
GATE
2
3
DRAIN
SOURCE
3
4-1
G
S
Single N-channel MOSFET
ELM32418LA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=30V, Vgs=0V, Ta=125°C
10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=10V
Max. body-diode continuous current
40
Vds=32V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
1.2
50
2.0
μA
±250
nA
3.0
V
A
Vgs=10V, Id=20A
12.5
15.0
mΩ
Vgs=7V, Id=10A
18.0
27.0
mΩ
Vds=10V, Id=20A
If=Is, Vgs=0V
25
1.3
S
V
Is
20
A
Ism
50
A
Gfs
Vsd
Ciss
Coss
Crss
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Vgs=0V, Vds=10V, f=1MHz
Vgs=10V, Vds=20V, Id=10A
Vgs=10V, Vds=20V, Id=1A
td(off) RL=1Ω, Rgen=6Ω
1
1
3
pF
23.0
3.6
nC
nC
2
2
3.0
3.2
6.4
nC
ns
2
2
10.8
21.7
ns
2
17.1
30.8
ns
2
10.7
ns
ns
2
tf
trr
If=20A, dIf/dt=100A/μs
5.3
60
Body diode reverse recovery charge
Qrr
If=20A, dIf/dt=100A/μs
43
4-2
1
1145 1450
255 355
95
145
Turn-off fall time
Body diode reverse recovery time
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
1
pF
pF
nC
NIKO-SEM
N-Channel
Logic LevelMOSFET
Enhancement
Single N-channel
Mode Field Effect Transistor
ELM32418LA-S
P1504BDG
TO-252 (DPAK)
Lead-Free
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS= 0V
T A = 125°C
Is - Reverse Drain Current(A)
10
25°C
1
-55°C
0.1
0.01
0.001
3
4-3
0
0.4
0.2
0.6
0.8
1.0
VSD - Body Diode Forward Voltage(V)
1.2
1.4
May-05-2006
NIKO-SEM
Single N-channel MOSFET
N-Channel Logic Level Enhancement
ELM32418LA-S
Mode
Field Effect Transistor
4
4-4
P1504BDG
TO-252 (DPAK)
Lead-Free
May-05-2006
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