elm32420la

Single N-channel MOSFET
ELM32420LA-S
■General description
■Features
ELM32420LA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=20V
Id=45A
Rds(on) < 14mΩ (Vgs=5V)
Rds(on) < 26mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Symbol
Vgs
Gate-source voltage
Continuous drain current
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
±12
V
45
A
30
140
A
3
48
W
20
Ta=25°C
Id
Ta=100°C
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=100°C
Junction and storage temperature range
Tj, Tstg
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Steady-state
Symbol
Rθjc
Maximum junction-to-ambient
Steady-state
Rθja
■Pin configuration
Typ.
Max.
2.6
Unit
°C/W
110.0
°C/W
Note
■Circuit
D
TO-252-3(TOP VIEW)
TAB
2
1
Pin No.
1
Pin name
GATE
2
3
DRAIN
SOURCE
3
4-1
G
S
Single N-channel MOSFET
ELM32420LA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=13.2V, Vgs=0V, Ta=125°C
10
Vds=0V, Vgs=±12V
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
0.45
45
0.75
μA
±100
nA
1.25
V
A
Vgs=5V, Id=18A
11
14
mΩ
Vgs=2.5V, Id=9A
18
26
mΩ
Vds=10V, Id=18A
If=Is, Vgs=0V
26
1.3
S
V
Is
45
A
Ism
140
A
Gfs
Vsd
Ciss
Coss
Crss
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Max. body-diode continuous current
20
Vds=16V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
Vgs=0V, Vds=15V, f=1MHz
Vgs=5V, Vds=10V, Id=18A
Vgs=5V, Vds=10V, Id=18A
td(off) Rgen=3.3Ω
tf
trr
Peak reverse recovery current
Irm(rec) If=Is, dIf/dt=100A/μs
Body diode reverse recovery charge
Qrr
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
1
1
1
1
3
500
pF
310
125
pF
pF
17.0
1.5
nC
nC
2
2
10.5
7.5
nC
ns
2
2
83.0
ns
2
18.0
ns
2
23.0
37
ns
ns
2
200
0.043
A
μC
NIKO-SEM
Single N-channel MOSFET
N-Channel
Logic Level Enhancement
ELM32420LA-S
Mode Field Effect Transistor
■Typical electrical and thermal characteristics
P1402CDG
TO-252 (DPAK)
Lead-Free
Body Diode Forward Voltage Variation with Source Current and Temperature
60
VGS= 0V
Is - Reverse Drain Current(A)
10
25° C
0.1
-55° C
0.01
0.001
0.0001
4-3
T = 125° C
1
0
0.2
0.4
0.6
0.8
1.0
VSD - Body Diode Forward Voltage(V)
1.2
1.4
NIKO-SEM
Single N-channel MOSFET
N-Channel
Logic Level Enhancement
ELM32420LA-S
Mode Field Effect Transistor
4-4
P1402CDG
TO-252 (DPAK)
Lead-Free
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