elm32428la

Single N-channel MOSFET
ELM32428LA-S
■General description
■Features
ELM32428LA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=25V
Id=75A
Rds(on) < 7mΩ (Vgs=10V)
Rds(on) < 10mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Gate-source voltage
Vgs
Continuous drain current
Ta=25°C
Ta=100°C
Repetitive avalanche energy
V
Idm
170
A
Iar
60
A
Eas
Ear
140
5.6
mJ
mJ
Id
Pulsed drain current
Avalanche current
Avalanche energy
±20
75
50
L=0.1mH
L=0.05mH
Tc=25°C
Tc=100°C
Junction and storage temperature range
Power dissipation
Pd
Tj, Tstg
A
60.00
32.75
-55 to 150
3
4
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Maximum case-to-heatsink
Steady-state
Steady-state
Symbol
Rθjc
Rθja
Rθcs
■Pin configuration
Typ.
Max.
2.3
Unit
°C/W
62.5
°C/W
°C/W
0.6
Note
■Circuit
D
TO-252-3(TOP VIEW)
TAB
2
1
Pin No.
Pin name
1
2
GATE
DRAIN
3
SOURCE
3
4-1
G
S
Single N-channel MOSFET
ELM32428LA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=20V, Vgs=0V, Ta=125°C
250
Vds=0V, Vgs=±20V
±250
nA
3.0
V
A
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
1.0
70
1.5
μA
Vgs=10V, Id=30A
5.0
7.0
mΩ
Vgs=4.5V, Id=24A
6.6
10.0
mΩ
Vds=15V, Id=30A
If=Is, Vgs=0V
55
1.3
S
V
Is
75
A
Ism
170
A
Gfs
Vsd
Ciss
Coss
Crss
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
V
25
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=10V
Max. body-diode continuous current
25
Vds=20V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
2700
Vgs=0V, Vds=15V, f=1MHz
Vgs=4.5V, Vds=15V, Id=25A
Vgs=10V, Vds=15V, Id=30A
td(off) Rgen=2.5Ω
tf
trr
Peak reverse recovery current
Irm(rec) If=Is, dIf/dt=100A/μs
Body diode reverse recovery charge
Qrr
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
1
1
1
1
3
pF
500
200
1100
pF
pF
19.0
7.0
25.0
9.0
nC
nC
2
2
7.5
11.0
17.0
nC
ns
2
2
26.0
ns
2
32.0
48.0
ns
2
7.5
37
11.0
ns
ns
2
11.5
17.0
200
0.043
A
μC
NIKO-SEM
N-Channel
Level Enhancement
Single Logic
N-channel
MOSFET
Mode Field Effect Transistor
ELM32428LA-S
P75N02LDG
TO-252 (DPAK)
Lead-Free
■Typical electrical and thermal characteristics
4-3
3
Jun-11-2005
NIKO-SEM
Single N-channel MOSFET
N-Channel Logic Level Enhancement
ELM32428LA-S
Mode Field Effect Transistor
P75N02LDG
TO-252 (DPAK)
Lead-Free
4-4
Jun-11-2005
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