Single N-channel MOSFET ELM32430LA-S ■General description ■Features ELM32430LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=25V Id=45A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=7V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Gate-source voltage Vgs Continuous drain current Ta=25°C Ta=100°C Repetitive avalanche energy V Idm 140 A Iar 20 A Eas Ear 140 5.6 mJ mJ Id Pulsed drain current Avalanche current Avalanche energy ±20 45 28 L=0.1mH L=0.05mH Tc=25°C Tc=100°C Junction and storage temperature range Power dissipation Pd Tj, Tstg A 55 33 -55 to 150 3 4 W °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Maximum case-to-heatsink Steady-state Steady-state Symbol Rθjc Rθja Rθcs ■Pin configuration Typ. Max. 3.0 Unit °C/W 70.0 °C/W °C/W 0.7 Note ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. 1 Pin name GATE 2 3 DRAIN SOURCE 3 4-1 G S Single N-channel MOSFET ELM32430LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=20V, Vgs=0V, Ta=125°C 250 Vds=0V, Vgs=±20V ±250 nA 2.5 V A Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 0.8 45 1.2 μA Vgs=10V, Id=20A 15 28 mΩ Vgs=7V, Id=18A 20 30 mΩ Vds=15V, Id=30A If=Is, Vgs=0V 16 1.3 S V Is 45 A Ism 150 A Gfs Vsd Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time V 25 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=10V Max. body-diode continuous current 25 Vds=20V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vgs=0V, Vds=15V, f=1MHz Vgs=10V, Vds=12.5V Id=20A Vgs=10V, Vds=15V, Id=30A td(off) RL=1Ω, Rgen=2.5Ω tf trr Peak reverse recovery current Irm(rec) If=Is, dIf/dt=100A/μs Body diode reverse recovery charge Qrr NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 1 1 1 1 3 600 pF 290 100 pF pF 25.0 2.9 nC nC 2 2 7.0 7 nC ns 2 2 7 ns 2 24 ns 2 6 37 ns ns 2 200 0.043 A μC NIKO-SEM N-Channel Level Enhancement SingleLogic N-channel MOSFET Mode Field Effect Transistor ELM32430LA-S P45N02LDG TO-252 (DPAK) Lead-Free ■Typical electrical and thermal characteristics TYPICAL CHARACTERISTICS 4-3 3 Sep-02-2004 NIKO-SEM Single N-channel MOSFET N-Channel ELM32430LA-S Logic Level Enhancement Mode Field Effect Transistor 4 4-4 P45N02LDG TO-252 (DPAK) Lead-Free Sep-02-2004