elm3f401ja

Single P-channel MOSFET
ELM3F401JA-S
■General description
■Features
ELM3F401JA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-8A
Rds(on) < 20mΩ (Vgs=-10V)
Rds(on) < 35mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
Symbol
Vds
Gate-source voltage
Vgs
±20
V
Id
-8.0
-6.3
A
4
Idm
Ias
Eas
-80
-29
42
A
A
mJ
3
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
2.0
1.2
-55 to 150
Pd
Tj, Tstg
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Symbol
Rθjc
Maximum junction-to-ambient
Rθja
■Pin configuration
7
6
5
•
1
2
3
Max.
6
Unit
°C/W
Note
62
°C/W
5
■Circuit
PDFN-3x3(TOP VIEW)
8
Typ.
4
Pin No.
1
2
Pin name
SOURCE
SOURCE
3
4
5
SOURCE
GATE
DRAIN
6
7
8
DRAIN
DRAIN
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM3F401JA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Idss
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-30
Vds=-24V, Vgs=0V
-1
Vds=-20V, Vgs=0V
Ta=125°C
-10
Gate-body leakage current
Gate threshold voltage
Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA
-1.0
On state drain current
Id(on) Vds=-5V, Vgs=-10V
-80
Static drain-source on-resistance
Rds(on)
If=-9A, Vgs=0V
Coss
Crss
Gate resistance
SWITCHING PARAMETERS
Total gate charge (Vgs=-10V)
Total gate charge (Vgs=-4.5V)
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
1
S
1
-1
V
1
-25
A
4
35
Vsd
Output capacitance
Reverse transfer capacitance
mΩ
23
23
Diode forward voltage
Is
nA
V
1
20
Gfs
μA
A
15
Forward transconductance
Ciss
-1.5
-100
-3.0
Vgs=-10V, Id=-9A
Vgs=-4.5V, Id=-7A
Vds=-5V, Id=-9A
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
V
1300
pF
212
200
pF
pF
2.8
Ω
29.4
nC
2
15.6
3.8
nC
nC
2
2
Qgd
7.8
nC
2
td(on)
20
ns
2
tr
Vgs=-10V, Vds=-15V
td(off) Id=-9A, Rgen=6Ω
12
55
ns
ns
2
2
36
14.3
4.2
ns
ns
nC
2
Rg
Vgs=0V, Vds=-15V
f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Qg
Qg
Qgs
tf
trr
Qrr
Vds=-15V, Id=-9A
If=-9A, dlf/dt=100A/μs
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Package limitation current is 30A.
5. The value of Rθja is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with Ta =25°C. The value in any given application depends on the user’s specific board design.
4-2
Single P-channel MOSFET
P-Channel Logic
Level Enhancement Mode P2003EEAA
ELM3F401JA-S
PDFN 3x3P
Field Effect Transistor
Halogen-Free & Lead-Free
■Typical electrical and thermal characteristics
NIKO-SEM
Output Characteristics
24
VGS=-3.5V
18
12
VGS=-2.5V
6
0
24
18
12
25�
�
6
0
0
1
2
3
4
-VDS, Drain-To-Source Voltage(V)
5
0
1
-20�
�
2
3
4
1400
6
4
1200
CISS
1000
800
600
400
2
COSS
CRSS
200
0
0.04
5
Capacitance Characteristic
1600
VDS=-15V
ID =-9A
8
�
125�
-VGS, Gate-To-Source Voltage(V)
Gate charge Characteristics
10
-VGS , Gate-To-Source Voltage(V)
-ID, Drain-To-Source Current(A)
VGS=-10V







Transfer Characteristics
30
C , Capacitance(pF)
-ID, Drain-To-Source Current(A)
30
0
6
12
18
24
Qg , Total Gate Charge(nC)
0
30
On-Resistance VS Gate-To--Source
0
5
10
15
20
25
-VDS, Drain-To-Source Voltage(V)
30
On-Resistance
Resistance VS Drain Current
0.1
RDS(ON)ON-Resistance(OHM)
RDS(ON)ON-Resistance(OHM)
0.035
0.03
VGS=-4.5V
0.025
0.02
VGS=-10V
0.015
0.01
0.005
0
0
6
12
18
24
0.08
0.06
0.04
0.02
0
30
-VGS, Gate-To-Source
Source Voltage(V)
ID=-9A
2
4
6
8
10
-ID , Drain-To--Source Current(A)
REV 0.9
3
4-3
Oct-05-2011
Single P-channel MOSFET
P-Channel Logic
Level Enhancement Mode
ELM3F401JA-S
Field Effect Transistor
NIKO-SEM
Source-Drain Diode Forward Voltage
100
1.8
-IS , Source Current(A)
Normalized Drain to Source
ON-Resistance
PDFN 3x3P
Halogen-Free & Lead-Free
On-Resistance VS Temperature
2.0
1.6
1.4
1.2
1.0
0.8
0.4
10
125�
�
25�
�
1
VGS=-10V
ID=-9A
0.6
-50
-25
0
25
50
75
100
125
0
150
0.0
0.2
0.4
Safe Operating Area
1.0
1.2
1.4
50
10
1
0.8
Single Pulse Maximum Power Dissipation
Power(W)
100
0.6
-VSD, Source-To-Drain Voltage(V)
TJ , Junction Temperature(˚C)
Single Pulse
RJA = 62˚C/W
TA=25˚C
40
30
1ms
Operation in This
Area is Limited by
RDS(ON)
10ms
20
100ms
NOTE :
1.VGS= -10V
2.TA=25˚C
3.RJA = 62˚C/W
4.Single Pulse
0.1
0.01
0.1
1
10
0
0.001
100
-VDS, Drain-To-Source Voltage(V)
Transient Thermal Resistance
10
DC
0.01
0.1
1
10
100
Single Pulse Time(s)
Transient Thermal Response Curve
10
r(t) , Normalized Effective
-ID , Drain Current(A)
P2003EEAA
1
Duty cycle=0.5
0.2
0.1
Notes
0.1
0.05
1.Duty cycle, D= t1 / t2
2.RthJA = 62 �/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
0.02
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
REV 0.9
4
4-4
10
100
Oct-05-2011
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