elm14405aa

Single P-channel MOSFET
ELM14405AA-N
■General description
■Features
ELM14405AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-6A (Vgs=-10V)
Rds(on) < 50mΩ (Vgs=-10V)
Rds(on) < 85mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
-6.0
-5.1
-30
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
3.0
2.1
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
t≤10s
Steady-state
Rθja
Maximum junction-to-lead
Steady-state
Rθjl
■Pin configuration
Typ.
31
59
Max.
40
75
Unit
°C/W
°C/W
Note
16
24
°C/W
3
1
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
Pin name
SOURCE
SOURCE
3
4
5
SOURCE
GATE
DRAIN
6
7
8
DRAIN
DRAIN
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM14405AA-N
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Rds(on)
Vgs=-10V, Id=-6A
Forward transconductance
Gfs
Diode forward voltage
Vsd
Is=-1A, Vgs=0V
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Qg
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
-1
-5
μA
±100
nA
-1.0
-30
-1.8
-3.0
V
A
40
50
Ta=125°C
55
65
9.5
70
85
6.0
-0.78
-1.00
V
-4.2
A
840
pF
pF
Is
Input capacitance
Output capacitance
Total gate charge (4.5V)
Gate-source charge
V
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Vgs=-4.5V, Id=-4A
Vds=-5V, Id=-6A
Max. body-diode continuous current
DYNAMIC PARAMETERS
-30
Vgs=0V, Vds=-15V, f=1MHz
700
112
Vgs=0V, Vds=0V, f=1MHz
78
10
Vgs=-10V, Vds=-15V, Id=-6A
14.7
7.6
2.0
15
18.0
mΩ
mΩ
S
pF
Ω
nC
nC
nC
3.8
8.6
nC
ns
Vgs=-10V, Vds=-15V
5.0
ns
td(off) RL=2.5Ω, Rgen=3Ω
tf
trr
If=-6A, dIf/dt=100A/μs
28.2
13.5
24.0
ns
ns
ns
Qrr
If=-6A, dIf/dt=100A/μs
NOTE :
14.7
30.0
nC
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM14405AA-N
■Typical electrical and thermal characteristics
20
-10V
10
-6V -5V
-4.5V
-4V
10
-Id(A)
-Id (A)
Vds=-5V
8
15
-3.5V
5
Vgs=-3V
0
0.00
2.00
3.00
4.00
4
125°C
2
-2.5V
1.00
6
25°C
0
5.00
0
1
3
4
1.6
80
Normalized On-Resistance
Rds(on) (m� )
100
Vgs=-4.5V
60
Vgs=-10V
40
20
1.4
Vgs=-10V
Vgs=-4.5V
1.2
1
Id=-5A
0.8
0
2
4
6
8
10
0
25
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
160
140
1E+00
Id=-5A
120
1E-01
100
1E-02
-Is (A)
Rds(on) (m� )
2
-Vgs(Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Figure 1: On-Region Characteristics
125°C
125°C
1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL
80
THIS PRODUCT
HAS BEEN DESIGNED AND
QUALIFIED FOR THE CONSUMER
25°C
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
1E-04
60
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
FUNCTIONS
WITHOUT NOTICE.
40 AND RELIABILITY
1E-05
1E-06
20
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.2
Single P-channel MOSFET
ELM14405AA-N
10
1200
Vds=-15V
Id=-6A
9
8
1000
Capacitance (pF)
-Vgs (Volts)
7
6
5
4
3
2
Ciss
800
600
400
Coss
200
1
0
0
2
4
6
8
10
12
14
Crss
0
16
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Tj(max)=150°C
Ta=25°C
1ms
10ms
DC
20
0
0.001
0.1
1
10
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=40°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
-Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
30
10
10s
10
25
30
100�s
1s
0.1
20
Tj(max)=150°C
Ta=25°C
10�s
0.1s
1
15
40
Rds(on)
limited
10
10
-Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-Id (Amps)
100
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
Pd
COMPONENTS
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
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