elm14409aa

Single P-channel MOSFET
ELM14409AA-N
■General description
■Features
ELM14409AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-15A (Vgs=-10V)
Rds(on) < 7.5mΩ (Vgs=-10V)
Rds(on) < 12mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
-15.0
-12.8
-80
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
3.0
2.1
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
t≤10s
Steady-state
Rθja
Maximum junction-to-lead
Steady-state
Rθjl
■Pin configuration
Typ.
26
50
Max.
40
75
Unit
°C/W
°C/W
Note
14
24
°C/W
3
1
■Circuit
SOP-8(TOP VIEW)
Pin No.
Pin name
1
2
3
SOURCE
SOURCE
SOURCE
1
8
2
7
3
6
4
5
GATE
DRAIN
4
5
6
DRAIN
7
8
DRAIN
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM14409AA-N
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-24V
Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vgs=-10V
Rds(on) Id=-15A
Ta=125°C
Vgs=-4.5V, Id=-10A
Gfs Vds=-5V, Id=-15A
Vsd
-5
-25
μA
±100
nA
Is=-1A, Vgs=0V
-1.4
-80
-1.9
-2.7
V
A
6.2
7.5
8.2
9.5
50
11.5
12.0
35
-0.71
-1.00
V
-5
A
6400
pF
pF
Is
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Qg
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
V
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Input capacitance
Output capacitance
Total gate charge (4.5V)
Gate-source charge
-30
Vgs=0V, Vds=-15V, f=1MHz
5270
945
Vgs=0V, Vds=0V, f=1MHz
745
2
Vgs=-10V, Vds=-15V
Id=-15A
Vgs=-10V, Vds=-15V
td(off) RL=1Ω, Rgen=3Ω
tf
trr
If=-15A, dIf/dt=100A/μs
Qrr
If=-15A, dIf/dt=100A/μs
NOTE :
100.0
51.5
14.5
3
120.0
mΩ
mΩ
S
pF
Ω
nC
nC
nC
23.0
14.0
nC
ns
16.5
ns
76.5
37.5
36.7
ns
ns
ns
28.0
45.0
nC
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM14409AA-N
■Typical electrical and thermal characteristics
60
60
-10V
50
-6V
-4.5V
-3.5V
40
-4V
-Id(A)
-Id (A)
40
Vds=-5V
50
30
30
20
20
Vgs=-3V
10
125°C
10
25°C
0
0
1
2
3
4
5
0
-Vds (Volts)
Fig 1: On-Region Characteristics
1
10
1.5
2.5
3
3.5
-Vgs(Volts)
Figure 2: Transfer Characteristics
4
1.6
Id=-15A
Normalized On-Resistance
Vgs=-4.5V
8
Rds(on) (m� )
2
Vgs=-10V
6
4
1.4
Vgs=-10V
Vgs=-4.5V
1.2
1
0.8
0
2
5
10 -Id (A) 15
20
25
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
20
1.0E+02
Id=-15A
16
1.0E+01
Vgs=0V
1.0E+00
12
-Is (A)
Rds(on) (m� )
25
125°C
125°C
1.0E-01
1.0E-02
8
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER
MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
25°C
1.0E-03
OUT OF SUCH
APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,
25°C
4
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
0
2
4
6
8
10
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
4-3
1.2
Single P-channel MOSFET
ELM14409AA-N
10
8
7000
6000
Capacitance (pF)
-Vgs (Volts)
8000
Vds=-15V
Id=-15A
6
4
Ciss
5000
4000
3000
Coss
2000
2
1000
0
0
100.0
20
40
60
80
100
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Rds(on)
limited
100�s
120
0
Power (W)
-Id (Amps)
10ms
1s
DC
1
10
100
-Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
10
30
Tj(max)=150°C
Ta=25°C
60
40
0
0.001
0.1
0.1
15
20
25
-Vds (Volts)
Figure 8: Capacitance Characteristics
20
10s
Tj(max)=150°C
Ta=25°C
10
80
0.1s
1.0
5
100
10�s
1ms
10.0
Crss
0
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=40°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
Pd
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
0.1
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
1
10
Pulse 0.1
Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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