elm14423aa

Single P-channel MOSFET
ELM14423AA-N
■General description
■Features
ELM14423AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance. Internal ESD protection is included.
•
•
•
•
•
Vds=-30V
Id=-15A (Vgs=-20V)
Rds(on) < 7mΩ (Vgs=-20V)
Rds(on) < 8.5mΩ (Vgs=-10V)
ESD Rating : 6000V HBM
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±25
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
-15.0
-12.1
-80
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
3.1
2.0
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
t≤10s
Steady-state
Rθja
Maximum junction-to-lead
Steady-state
Rθjl
■Pin configuration
Typ.
26
50
Max.
40
75
Unit
°C/W
°C/W
Note
14
24
°C/W
3
1
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
Pin name
SOURCE
SOURCE
3
4
5
SOURCE
GATE
DRAIN
6
7
8
DRAIN
DRAIN
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM14423AA-N
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-24V
Vgs=0V
-30
-100
Ta=55°C
-500
±1
Vds=0V, Vgs=±20V
Gate threshold voltage
Vds=0V, Vgs=±25V
Vgs(th) Vds=Vgs, Id=-250μA
-2.0
On state drain current
Id(on) Vgs=-10V, Vds=-5V
-80
Static drain-source on-resistance
Rds(on)
Forward transconductance
Gfs
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Rg
Qg
Qgs
Qgd
±10
-2.7
-3.5
nA
μA
μA
V
A
5.7
7.1
7.0
8.6
6.8
9.4
43
8.5
12.0
mΩ
mΩ
S
Is=-1A, Vgs=0V
-0.71
-1.00
-4.2
V
A
Vgs=0V, Vds=-15V, f=1MHz
4632
1034
705
pF
pF
pF
2.5
Ω
82.0
nC
16.8
23.0
nC
nC
18.5
20.0
55.0
ns
ns
ns
30.0
43
38
ns
ns
nC
Vgs=-20V
Id=-15A
Ta=125°C
Vgs=-10V, Id=-15A
Vgs=-6V, Id=-10A
Vds=-5V, Id=-15A
Vgs=0V, Vds=0V, f=1MHz
Vgs=-10V, Vds=-15V
Id=-15A
td(on)
tr
Vgs=-10V, Vds=-15V
td(off) RL=1Ω, Rgen=3Ω
tf
trr
Qrr
V
If=-15A, dIf/dt=100A/μs
If=-15A, dIf/dt=100A/μs
NOTE :
mΩ
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM14423AA-N
■Typical electrical and thermal characteristics
30
50
-10V
-6V
-5V
30
20
-4.5V
-Id(A)
-Id (A)
40
Vds=-5V
25
20
125°C
15
10
Vgs=-4V
10
25°C
5
0
0
0
1
2
3
4
2
5
2.5
12
Normalized On-Resistance
Rds(on) (m� )
3.5
4
4.5
5
1.6
Vgs=-6V
10
8
Vgs=-10V
6
Vgs=-20V
4
Vgs=-10V
Id = -15A
1.4
Vgs=-20V
Id = -15A
1.2
Vgs=-6V
Id = -10A
1
0.8
0
5
10
15
20
25
30
0
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
16
25
50
-Is (A)
10
175
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
6
1.0E-05
4
1.0E-06
8
150
1.0E+00
125°C
4
125
-15
1.0E+01
1.0E-01
8
100
-12.8
Id=-15A
12
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
14
Rds(on) (m� )
3
-Vgs(Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Fig 1: On-Region Characteristics
12
16
25°C
0.0
20
0.2
0.4
0.6
0.8
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.0
Single P-channel MOSFET
ELM14423AA-N
10
6000
Capacitance (pF)
8
-Vgs (Volts)
7000
Vds=-15V
Id=-15A
6
4
2
4000
3000
Coss
2000
1000
0
0
10
20
30
40
50
60
70
80
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Crss
0
90
0
100.0
5
10
15
20
25
-Vds (Volts)
Figure 8: Capacitance Characteristics
40
Rds(on)
limited
100�s
1ms
10.0
30
10ms
0.1s
1.0
1s
Tj(max)=150°C
Ta=25°C
10s
DC
1
10
-Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
Z�ja Normalized Transient
Thermal Resistance
20
10
0
0.001
0.1
0.1
30
Tj(max)=150°C
Ta=25°C
10�s
Power (W)
-Id (Amps)
Ciss
5000
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=40°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
100
-12.8
0.01
-15
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
Single Pulse
0.0001
T
1
10
0.001
0.01
Pulse 0.1
Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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