elm14425aa

Single P-channel MOSFET
ELM14425AA-N
■General description
■Features
ELM14425AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance. Internal ESD protection is included.
•
•
•
•
•
Vds=-38V
Id=-14A (Vgs=-20V)
Rds(on) < 10mΩ (Vgs=-20V)
Rds(on) < 11mΩ (Vgs=-10V)
ESD Rating : 4000V HBM
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-38
V
±25
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
-14
-11
-50
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
3.1
2.0
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
t≤10s
Steady-state
Rθja
Maximum junction-to-lead
Steady-state
Rθjl
■Pin configuration
Typ.
26
50
Max.
40
75
Unit
°C/W
°C/W
Note
14
24
°C/W
3
1
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
Pin name
SOURCE
SOURCE
3
4
5
SOURCE
GATE
DRAIN
6
7
8
DRAIN
DRAIN
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM14425AA-N
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-30V
Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Vds=0V, Vgs=±25V
-38
-100
Ta=55°C
-500
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=-250μA
-2.0
On state drain current
Id(on) Vgs=-10V, Vds=-5V
-50
Static drain-source on-resistance
Vgs=-20V
Rds(on) Id=-14A
Ta=125°C
Vgs=-10V, Id=-14A
Forward transconductance
Gfs
Vds=-5V, Id=-14A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Is=-1A, Vgs=0V
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Crss
Rg
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
V
-2.5
nA
±1
±10
μA
μA
-3.5
V
A
7.7
10.0
11.0
8.8
13.5
11.0
43
-0.71
mΩ
mΩ
S
-1.00
-4.2
V
A
3800
pF
Vgs=0V, Vds=-20V, f=1MHz
560
pF
Vgs=0V, Vds=0V, f=1MHz
350
7.5
pF
Ω
63.0
14.1
16.1
nC
nC
nC
td(on)
tr
Vgs=-10V, Vds=-20V
12.4
9.2
ns
ns
td(off) RL=1.35Ω, Rgen=3Ω
tf
trr
If=-14A, dIf/dt=100A/μs
97.5
45.5
35
ns
ns
ns
33
nC
Qg
Qgs
Qgd
Qrr
Vgs=-10V, Vds=-20V
Id=-14A
If=-14A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM14425AA-N
■Typical electrical and thermal characteristics
30
30
-20V
-10V
-5V
25
20
-4.5V
-Id (A)
-Id (A)
20
-4V
15
-3.5V
10
5
2
3
4
2
2.5
3
3.5
4
4.5
5
-Vgs(Volts)
Figure 2: Transfer Characteristics
10
1.6
Normalized On-Resistance
Rds(on) (m� )
25°C
0
5
-Vds (Volts)
Fig 1: On-Region Characteristics
Vgs=-10V
9
8
Vgs=-20V
7
6
0
5
10
15
20
25
Vgs=-10V
Id = -14A
1.4
Vgs=-20V
Id = -14A
1.2
1
0.8
30
0
-Id (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
-15
1.0E+01
20
-12.8
Id=-14A
1.0E+00
1.0E-01
15
-Is (A)
Rds(on) (m� )
125°C
5
0
1
15
10
Vgs=-3V
0
Vds=-5V
25
125°C
10
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
25°C
1.0E-05
1.0E-06
5
4
8
12
16
0.0
20
0.2
0.4
0.6
0.8
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.0
Single P-channel MOSFET
ELM14425AA-N
5000
10
Vds=-15V
Id=-14A
Capacitance (pF)
6
4
2000
1000
0
0
10
20
30
40
50
60
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
70
10
20
30
-Vds (Volts)
Figure 8: Capacitance Characteristics
40
1ms
0.1s
1s
Tj(max)=150°C
Ta=25°C
20
10
Tj(max)=150°C
Ta=25°C
10s
DC
0
0.001
0.1
0.1
40
30
10ms
1
-Vds (Volts)
10
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
Z�ja Normalized Transient
Thermal Resistance
Crss
100�s
10.0
1.0
Coss
0
10�s
Rds(on)
limited
-Id (Amps)
3000
2
0
Ciss
4000
Power (W)
-Vgs (Volts)
8
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=40°C/W
-12.8
0.01
-15
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
T
1
10
0.01
Pulse 0.1
Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
4-4
100
1000
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