elm340703a

Single P-channel MOSFET
ELM340703A-N
■General description
■Features
ELM340703A-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance. Internal ESD protection is included.
•
•
•
•
•
Vds=-30V
Id=-15A
Rds(on) < 7mΩ (Vgs=-10V)
Rds(on) < 12mΩ (Vgs=-4.5V)
ESD protected
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Power dissipation
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±20
V
Tc=70°C
Junction and storage temperature range
Idm
-15
-11
-69
Ias
-69
A
Eas
238
2.5
mJ
Id
Pd
Tj, Tstg
A
A
3
W
1.6
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Rθja
■Pin configuration
Typ.
Max.
Unit
50
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
Pin name
SOURCE
2
3
SOURCE
SOURCE
4
5
GATE
DRAIN
6
7
8
DRAIN
DRAIN
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM340703A-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
Static drain-source on-resistance
Condition
Vds=-20V, Vgs=0V, Ta=125°C
-10
Vds=0V, Vgs=±16V
±30
μA
-1.7
4.8
-3.0
7.0
V
6.8
12.0
Gfs
Vds=-5V, Id=-15A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Is=-15A, Vgs=0V
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Ciss
Coss Vgs=0V, Vds=-15V, f=1MHz
Crss
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Qgs
Qgd
td(on)
Vgs=-10V, Vds=-15V
Id=-15A
tr
Vgs=-10V, Vds=-15V
td(off) Id=-15A, Rgen=6Ω
Turn-off fall time
tf
Reverse recovery time
trr
Reverse recovery charge
Qrr
V
-1
Forward transconductance
Turn-off delay time
-30
Vds=-24V, Vgs=0V
Vgs(th) Vds=Vgs, Id=-250μA
Vgs=-10V, Id=-15A
Rds(on)
Vgs=-4.5V, Id=-10A
Qg
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
If=-15A, dIf/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4-2
-1.0
25
-1.2
-15
μA
mΩ
1
S
1
V
A
1
5200
885
789
pF
pF
pF
119
nC
2
14
31
26
nC
nC
ns
2
2
2
29
225
ns
ns
2
2
124
ns
2
35
ns
20
nC
Single P-channel MOSFET
P-Channel Logic
Level Enhancement Mode
PZ0703EV
ELM340703A-N
SOP-8
Field Effect Transistor
Halogen-Free
&
Lead-Free
■Typical electrical and thermal characteristics
NIKO-SEM
Output Characteristics
On-Resistance VS Drain Current
0.008
RDS(ON)ON-Resistance(OHM)
-ID, Drain-To-Source Current(A)
60
VGS =-3V
48
VGS =-10V
VGS =-7V
VGS =-5V
VGS =-4.5V
36
24
VGS =-2.5V
12
0
0
1
2
3
4
5
6
7
0.007
0.005
VGS = -10V
0.004
0.003
0.002
0.001
0
8
0
-VDS, Drain-To-Source Voltage(V)
On-Resistance VS Gate-To-Source
0.008
0.006
0.004
0.002
12
24
36
1.6
1.4
1.2
1.0
0.8
V GS=-10V
ID=-15A
ID = -15A
0
2
4
6
8
-VGS, Gate-To-Source Voltage(V)
0.4
10
-50
Transfer Characteristics
48
36
24
125℃
25℃
12
-20℃
0
0
1
2
3
4
0
25
50
75
100
125
Junction Temperature(˚C)
150
Characteristics
ID=-15A
VDS=-15V
8
6
4
2
0
5
0
-VGS, Gate-To-Source Voltage(V)
REV 1.0
-25
TJ ,
Gate charge Characteristics
10
-VGS , Gate-To-Source Voltage(V)
60
60
1.8
0.6
0
48
-ID , Drain-To-Source Current
On-Resistance VS Temperature
2.0
Normalized Drain to Source
ON-Resistance
RDS(ON)ON-Resistance(OHM)
0.01
-ID, Drain-To-Source Current(A)
VGS = -4.5V
0.006
25
50
75
100
Qg , Total Gate Charge(nC)
3
4-3
D-42-5
Single P-channel MOSFET
SOP-8
Halogen-Free & Lead-Free
Capacitance Characteristic
7.00E+03
PZ0703EV
P-Channel Logic
Level Enhancement Mode
ELM340703A-N
Field Effect Transistor
NIKO-SEM
Body Diode Forward Voltage VS Source current
1.00E+02
6.00E+03
5.00E+03
-IS , Source Current(A)
C , Capacitance(pF)
CISS
4.00E+03
3.00E+03
2.00E+03
1.00E+03
COSS
CRSS
5
10
15
20
-VDS, Drain-To-Source Voltage(V)
25
30
Safe Operating Area
100
125℃
25℃
1.00E+00
1.00E-01
0.0
0.00E+00
0
1.00E+01
0.2
0.4
0.6
0.8
1.0
1.4
Single Pulse Maximum Power Dissipation
200
160
SINGLE PULSE
RθJA = 50° C/W
TA=25° C
10
1m s
120
1
Power(W)
-ID , Drain Current(A)
1.2
-VSD, Source-To-Drain Voltage(V)
10m s
Operation in This Area
is Lim ited by RDS(ON)
100m s
1S
0.1
10S
DC
NOTE :
1.V GS= 10V
2.TA=25° C
3.RθJA = 50° C/W
80
40
4.Single Pulse
0
0.001
0.01
0.1
1
10
-VDS, Drain-To-Source Voltage(V)
Transient Thermal Resistance
0.01
0.1
1
10
100
Single Pulse Time(s)
Transient Thermal Response Curve
1.00E+01
r(t) , Mormalized Effective
100
1.00E+00
Duty cycle=0.5
Notes
0.2
1.00E-01
0.1
1.Duty cycle, D= t1 / t2
2.RthJA = 50 ℃/W
3.TJ-TA = P*RthJA(t)
4.ZthJA(t) = r(t)*ZthJA
0.05
0.02
0.01
1.00E-02
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
T1 , Square Wave Pulse Duration[sec]
REV 1.0
4
4-4
D-42-5
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