elm34403aa

Single P-channel MOSFET
ELM34403AA-N
■General description
■Features
ELM34403AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-55V
Id=-4.5A
Rds(on) < 80mΩ (Vgs=-10V)
Rds(on) < 150mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-55
V
Gate-source voltage
Vgs
±20
-4.5
V
Ta=25°C
Continuous drain current
Ta=70°C
Pulsed drain current
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
A
-3.5
-20
A
2.5
3
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Steady-state
Symbol
Rθja
■Pin configuration
Typ.
Max.
50
Unit
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
Pin name
SOURCE
SOURCE
3
4
SOURCE
GATE
5
6
DRAIN
DRAIN
7
8
DRAIN
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM34403AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-36V,Vgs=0V,Ta=125°C
-10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Max. body-diode continuous current
-55
Vds=-44V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-1.0
-20
-1.5
μA
±250
nA
-2.5
V
A
Vgs=-10V, Id=-4.5A
60
80
mΩ
Vgs=-4.5V, Id=-3.5A
90
150
mΩ
Vds=-10V, Id=-4.5A
Is=If, Vgs=0V
9
-1
S
V
Is
-1.3
A
Ism
-2.6
A
Gfs
Vsd
Ciss
Coss
Crss
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Vgs=0V, Vds=-30V, f=1MHz
Vgs=-10V, Vds=-27.5V
Id=-4.5A
Vgs=-10V, Vds=-20V
td(off) Id=-1A, Rgen=6Ω
1
1
3
pF
90
40
pF
pF
15.0
2.5
nC
nC
2
2
3.0
7
14
nC
ns
2
2
10
20
ns
2
19
34
ns
2
22
ns
ns
2
tf
trr
If=-3.5A, dIf/dt=100A/μs
12
15.5
Body diode reverse recovery charge
Qrr
If=-3.5A, dIf/dt=100A/μs
7.9
4-2
1
760
Turn-off fall time
Body diode reverse recovery time
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
1
nC
NIKO-SEM
P8006EVG
P-Channel
Level MOSFET
Enhancement
SingleLogic
P-channel
SOP-8
Lead-Free
Mode Field Effect Transistor
ELM34403AA-N
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
100
-Is - Reverse Drain Current(A)
V GS = 0V
10
1
T A = 125° C
0.1
25° C
-55° C
0.01
0.001
0
0.2
0.6
0.8
1.0
0.4
-VSD - Body Diode Forward Voltage(V)
1.2
1.4
4-3
SEP-30-2004
NIKO-SEM
P-Channel
Logic Level
Enhancement
Single P-channel
MOSFET
Mode Field Effect Transistor
ELM34403AA-N
4-4
P8006EVG
SOP-8
Lead-Free
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