Single P-channel MOSFET ELM34407AA-N ■General description ■Features ELM34407AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-8A Rds(on) < 32mΩ (Vgs=-10V) Rds(on) < 55mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -30 V Gate-source voltage Vgs ±25 -8 V Ta=25°C Continuous drain current Ta=70°C Pulsed drain current Id Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg A -7 -30 A 2.5 3 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 25 50 Unit °C/W °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name SOURCE 2 3 4 SOURCE SOURCE GATE 5 6 DRAIN DRAIN 7 DRAIN 8 DRAIN 4-1 D G S Single P-channel MOSFET ELM34407AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-20V,Vgs=0V,Ta=125°C -10 Vds=0V, Vgs=±25V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge -0.8 -30 -1.5 μA ±100 nA -2.5 V A Vgs=-10V, Id=-8A 26 32 mΩ Vgs=-4.5V, Id=-6A 44 55 mΩ Vds=-10V, Id=-6A Is=-1A, Vgs=0V 7 -1 S V Is -3 A Ism -6 A Gfs Vsd Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery charge V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Max. body-diode continuous current -30 Vds=-24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vgs=0V, Vds=-15V, f=1MHz Vgs=-10V, Vds=-15V Id=-6A Vgs=-10V, Vds=-10V td(off) Id=-1A, Rgen=3Ω tf Qrr NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 1 1 1 1 3 920 pF 190 120 pF pF 18.5 2.7 nC nC 2 2 4.5 7.7 nC ns 2 2 5.7 ns 2 20.0 ns 2 9.5 7.9 ns nC 2 NIKO-SEM Single P-channel MOSFET P-ChannelELM34407AA-N Logic Level Enhancement Mode Field Effect Transistor ■Typical electrical and thermal characteristics 4-3 P3203EVG SOP-8 Lead-Free NIKO-SEM Single P-channel MOSFET P-Channel Logic Level Enhancement ELM34407AA-N Mode Field Effect Transistor 4-4 P3203EVG SOP-8 Lead-Free