Single P-channel MOSFET ELM34411AA-N ■General description ■Features ELM34411AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 14mΩ (Vgs=-10V) Rds(on) < 22mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -30 V Gate-source voltage Vgs ±25 -12 -9 V -50 2.5 1.3 A Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Id Idm Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Pd Tj, Tstg A 3 W -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 25 50 Unit °C/W °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 3 SOURCE SOURCE SOURCE 4 GATE 5 6 7 DRAIN DRAIN DRAIN 8 DRAIN 4-1 D G S Single P-channel MOSFET ELM34411AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-20V,Vgs=0V,Ta=125°C -10 Vds=0V, Vgs=±25V nA -3.0 V A 1 mΩ 1 -1.2 S V 1 1 Is -2.1 A Ism -4 A Rds(on) Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gfs Vsd Coss Crss Gate-source charge Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr -1.0 -50 -1.5 Vgs=-10V, Id=-12A 12 14 Vgs=-4.5V, Id=-9A 18 22 Vds=-10V, Id=-12A Is=If, Vgs=0V 28 Ciss Qg Qgs Turn-off fall time μA ±100 Static drain-source on-resistance Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Max. body-diode continuous current -30 Vds=-24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vgs=0V, Vds=-15V, f=1MHz Vgs=-10V, Vds=-15V Id=-12A Vgs=-10V, Vds=-15V td(off) Id=-1A, Rgen=6Ω tf NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 3000 pF 870 360 pF pF 30 9 42 3 nC nC 2 2 11 12 nC ns 2 2 16 ns 2 50 ns 2 100 ns 2 Single P-channel MOSFET ELM34411AA-N P-Channel Logic Level Enhancement Modecharacteristics Field Effect Transistor ■Typical electrical and thermal NIKO-SEM P1403EVG SOP-8 Lead-Free Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS= 0V -Is - Reverse Drain Current(A) 10 T A= 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 0 3 4-3 0.6 0.2 0.4 0.8 -VSD - Body Diode Forward Voltage(V) 1.0 1.2 JAN-17-2006 NIKO-SEM Single P-channel MOSFET P-Channel ELM34411AA-N Logic Level Enhancement Mode Field Effect Transistor 4 4-4 P1403EVG SOP-8 Lead-Free JAN-17-2006