elm34413aa

Single P-channel MOSFET
ELM34413AA-N
■General description
■Features
ELM34413AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-12A
Rds(on) < 12mΩ (Vgs=-10V)
Rds(on) < 19mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-30
V
Gate-source voltage
Vgs
±25
-12
V
Ta=25°C
Continuous drain current
Ta=70°C
Pulsed drain current
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
A
-9
-50
A
2.5
3
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Steady-state
Symbol
Rθjc
Maximum junction-to-ambient
Steady-state
Rθja
■Pin configuration
Typ.
Max.
25
Unit
°C/W
50
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
3
SOURCE
SOURCE
SOURCE
4
GATE
5
6
7
DRAIN
DRAIN
DRAIN
8
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM34413AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-20V, Vgs=0V, Ta=125°C
-10
Vds=0V, Vgs=±25V
μA
±100
nA
-3.0
V
A
1
mΩ
1
-1.2
S
V
1
1
Is
-2.1
A
Ism
-4
A
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Max. body-diode continuous current
-30
Vds=-24V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
Gfs
Vsd
-1.0
-50
-1.5
Vgs=-10V, Id=-12A
10
12
Vgs=-4.5V, Id=-9A
15
19
Vds=-10V, Id=-12A
Is=If, Vgs=0V
29
Ciss
3450
pF
Coss Vgs=0V, Vds=-15V, f=1MHz
Crss
1000
414
pF
pF
Gate-source charge
Qg
Qgs
34.5
10.3
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Turn-off fall time
Vgs=-10V, Vds=-15V
Id=-12A
Vgs=-10V, Vds=-15V
td(off) Id=-1A, Rgen=6Ω
tf
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
48.3
3
nC
nC
2
2
12.6
13.8
nC
ns
2
2
18.4
ns
2
57.5
ns
2
115.0
ns
2
Single P-channel MOSFET
NIKO-SEM
ELM34413AA-N
P-Channel Logic
Level Enhancement
Mode Field Effect Transistor
■Typical electrical and thermal
characteristics
P1203EVG
SOP-8
Lead-Free
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS= 0V
-Is - Reverse Drain Current(A)
10
T A= 125°C
1
25°C
0.1
-55°C
0.01
0.001
0.0001
0
3
4-3
0.6
0.2
0.4
0.8
-VSD - Body Diode Forward Voltage(V)
1.0
1.2
MAR-30-2006
NIKO-SEM
Single P-channel MOSFET
P-Channel ELM34413AA-N
Logic Level Enhancement
Mode Field Effect Transistor
5
4-4
P1203EVG
SOP-8
Lead-Free
MAR-30-2006
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