elm34417aa

Single P-channel MOSFET
ELM34417AA-N
■General description
■Features
ELM34417AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-6A
Rds(on) < 45mΩ (Vgs=-10V)
Rds(on) < 75mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
±20
-6
-5
-30
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
V
A
A
2.5
3
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Steady-state
Steady-state
Symbol
Rθjc
Rθja
■Pin configuration
Typ.
Max.
25
50
Unit
°C/W
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
Pin name
SOURCE
2
3
4
SOURCE
SOURCE
GATE
5
6
7
DRAIN
DRAIN
DRAIN
8
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM34417AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-20V, Vgs=0V, Ta=125°C
-10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Max. body-diode continuous current
-30
Vds=-24V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-0.9
-30
-1.5
μA
±100
nA
-3.0
V
A
Vgs=-10V, Id=-6A
37
45
mΩ
Vgs=-4.5V, Id=-5A
60
75
mΩ
Vds=-10V, Id=-6A
Is=-1A, Vgs=0V
16
-1.2
S
V
Is
-2.1
A
Ism
-4
A
Gfs
Vsd
Ciss
530
pF
Coss Vgs=0V, Vds=-15V, f=1MHz
Crss
135
70
pF
pF
Gate-source charge
Qg
Qgs
10.0
2.2
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Vgs=-10V, Vds=-15V
Id=-6A
Vgs=-10V, Vds=-15V
td(off) Id=-1A, RL=1Ω, Rgen=6Ω
3
2.0
5.7
nC
ns
2
2
10.0
ns
2
18.0
ns
2
ns
ns
2
nC
If=-5A, dIf/dt=100A/μs
Qrr
If=-5A, dIf/dt=100A/μs
7.9
4-2
1
1
2
2
5.0
15.5
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
1
nC
nC
tf
trr
14.0
1
NIKO-SEM
Single Logic
P-channel
P-Channel
LevelMOSFET
Enhancement
Mode
Field Effect Transistor
ELM34417AA-N
■Typical electrical and thermal characteristics
3
4-3
P06P03LVG
SOP-8
Lead-Free
JUN-10-2004
Single P-channel MOSFET
NIKO-SEM
P-Channel ELM34417AA-N
Logic Level Enhancement
Mode Field Effect Transistor
4
4-4
P06P03LVG
SOP-8
Lead-Free
JUN-10-2004
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