elm13403ca

Single P-channel MOSFET
ELM13403CA-S
■General description
■Features
ELM13403CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=-30V
Id=-2.6A (Vgs=-10V)
Rds(on) < 130mΩ (Vgs=-10V)
Rds(on) < 180mΩ (Vgs=-4.5V)
Rds(on) < 260mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±12
V
Symbol
Vds
Vgs
Ta=25°C
Continuous drain current
-2.6
Id
Ta=70°C
Pulsed drain current
-2.2
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
-20
1.4
1.0
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
70
100
63
90
125
80
°C/W
°C/W
°C/W
1
2
1
3
■Circuit
SOT-23(TOP VIEW)
3
Note
D
Pin No.
Pin name
1
2
GATE
SOURCE
3
DRAIN
G
S
4-1
Single P-channel MOSFET
ELM13403CA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-24V
Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Rds(on)
Vgs=-10V
Id=-2.6A
Vds=-5V, Id=-2.5A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Is=-1A, Vgs=0V
Input capacitance
Ciss
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Rg
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
-0.6
-10
Ta=125°C
Vgs=-4.5V, Id=-2A
Vgs=-2.5V, Id=-1A
Gfs
Vgs=0V, Vds=-15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=-4.5V, Vds=-15V
Id=-2.5A
Vgs=-10V, Vds=-15V
td(off) RL=6Ω, Rgen=3Ω
tf
trr
If=-2.5A, dIf/dt=100A/μs
Qrr
NOTE :
V
-1
-5
μA
±100
nA
-1.0
-1.4
V
A
102
130
154
128
187
200
180
260
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Forward transconductance
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
-30
3.0
4.5
mΩ
mΩ
mΩ
S
-0.85
-1.00
-2
V
A
409
500
pF
16
pF
pF
Ω
55
42
12
4.40
0.80
5.30
nC
nC
1.32
5.3
8.0
nC
ns
4.4
9.0
ns
31.5
8.0
15.8
45.0
16.0
19.0
ns
ns
ns
8.0
12.0
nC
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM13403CA-S
■Typical electrical and thermal characteristics
10
20
-5V
-10V
8
-4V
10
-Id (A)
Vgs=-3.5V
-3V
2 5V
5
6
125°C
4
2
-2.0V
0
0
0
1
2
3
4
5
0
0.5
250
1.5
2
2.5
3
3.5
4
1.6
Normalized On-Resistance
Rds(on) (m� )
1
-Vgs (Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Fig 1: On-Region Characteristics
Vgs=-2.5V
200
150
Vgs=-4.5V
100
50
0
1
2
3
Vgs=-10V
4
5
Vgs=-10V
VGS=-4.5V
1.4
VGS=-2.5V
1.2
ID=-2A
1
0.8
6
0
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
300
1.0E+01
250
1.0E+00
Id=-2A
200
150
100
25°C
2
4
6
75
100
125
150
175
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0
0
50
1.0E-01
125°C
50
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-Is (A)
Rds(on) (m� )
-Id (A)
15
25°C
Vds=-5V
-4.5V
8
10
1.0E-06
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
4-3
1.2
Single P-channel MOSFET
ELM13403CA-S
5
500
Capacitance (pF)
4
-Vgs (Volts)
600
Vds=-15V
Id=-2.5A
3
2
1
Ciss
400
300
200
Coss
0
0
1
2
3
4
0
5
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
1ms
10ms
0.1
DC
1
10
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
-Vds (Volts)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
30
Tj(max)=150°C
Ta=25°C
0
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
1
25
5
10s
10
20
10
1s
0.1
15
15
10�s
Power (W)
100�s
0.1s
1.0
10
20
Rds(on)
limited
10.0
5
-Vds (Volts)
Figure 8: Capacitance Characteristics
Tj(max)=150°C
Ta=25°C
Z�ja Normalized Transient
Thermal Resistance
-Id (Amps)
Crss
100
Pd
Ton
Single Pulse 0.001
0.0001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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